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Balamurugan, J.,Thanh, T.D.,Heo, S.B.,Kim, N.H.,Lee, J.H. Pergamon Press ; Elsevier Science Ltd 2015 Carbon Vol.94 No.-
A facile and cost-effective one-pot solvothermal method has been successfully developed to synthesize an N-doped graphene (NG) and copper-nickel oxide (CuNiO) composite. The novel NG/CuNiO composite is proposed to be used as an electrode material for supercapacitors and non-enzymatic glucose sensors. Transmission electron microscopy images indicate the formation of CuNiO nanoparticles with an average diameter of approximately 5.6nm, with good dispersion on the NG sheets. The composite exhibited an excellent specific capacity of ~892Fg<SUP>-1</SUP> (current density of 1Ag<SUP>-1</SUP>) and high long-cycle stability with a 98.5% retention in specific capacitance after 5000 cycles at a current density of 5Ag<SUP>-1</SUP>. This superior electrochemical performance is attributed to high charge mobility, the flexibility of the N-doped graphene structure, and the synergetic effect between CuNiO nanoparticles and NG sheets. Further, the proposed sensor exhibited rapid response (<10s), high sensitivity (7.49μAmM<SUP>-1</SUP>cm<SUP>-2</SUP>), a wide detection range (0.2μM-0.3mM), good reproducibility, long-term stability, and a low detection limit 50nM (S/N=3). The NG/CuNiO composite electrode can be used for high performance supercapacitor and non-enzymatic glucose sensor applications.
Malik, Y.P.S.,Chakravarti, S.,Sharma, K.,Vaid, N.,Rajak, K.K.,Balamurugan, V.,Biswas, S.K.,Mondal, B.,Kataria, R.S.,Singh, R.K. Asian Australasian Association of Animal Productio 2011 Animal Bioscience Vol.24 No.7
Toll-like receptors (TLRs) play an important role in the recognition of invading pathogens and the modulation of innate immune responses in mammals. The TLR4 and TLR7 are well known to recognize the bacterial lipopolysaccharide (LPS) and single stranded (ssRNA) ligands, respectively and play important role in host defense against Gram-negative bacteria and ssRNA viruses. In the present study, coding exon fragments of these two TLRs were identified, cloned, sequenced and analyzed in terms of insertion-deletion polymorphism, within bovine TLRs 4 and 7, thereby facilitating future TLR signaling and association studies relevant to bovine innate immunity. Comparative sequence analysis of TLR 4 exons revealed that this gene is more variable, particularly the coding frame (E3P1), while other parts showed percent identity of 95.7% to 100% at nucleotide and amino acid level, respectivley with other Bos indicus and Bos taurus breeds from different parts of the world. In comparison to TLR4, sequence analysis of TLR7 showed more conservation among different B. indicus and B. taurus breeds, except single point mutation at 324 nucleotide position (AAA to AAM) altering a single amino acid at 108 position (K to X). Percent identity of TLR7 sequences (all 3 exons) was between 99.2% to 100% at nucleotide and amino acid level, when compared with available sequence database of B. indicus and B. taurus. Simple Modular Architecture Research Tool (SMART) analysis showed variations in the exon fragments located in the Leucine Rich Repeat (LRR) region, which is responsible for binding with the microbial associated molecular patterns and further, downstream signaling to initiate anti-microbial response. Considering importance of TLR polymorphism in terms of innate immunity, further research is warranted.
Balamurugan, N.B.,Sankaranarayanan, K.,Suguna, M. The Institute of Electronics and Information Engin 2008 Journal of semiconductor technology and science Vol.8 No.1
In this Paper, we present a scaling theory for dual material surrounding gate (DMSGTs) MOSFETs, which gives a guidance for the device design and maintaining a precise subthreshold factor for given device parameters. By studying the subthreshold conducting phenomenon of DMSGTs, the effective conductive path effect (ECPE) is employed to acquire the natural length to guide the design. With ECPE, the minimum channel potential is used to monitor the subthreshold behavior. The effect of ECPE on scaling factor significantly improves the subthreshold swing compared to conventional scaling rule. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.
N. B. Balamurugan,K. Sankaranarayanan,P. Amutha,M. Fathima John 대한전자공학회 2008 Journal of semiconductor technology and science Vol.8 No.3
A new two dimensional (2-D) analytical model for the Threshold Voltage on dual material surrounding gate (DMSG) MOSFETs is presented in this paper. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expression for the threshold voltage and subthreshold swing is derived. It is seen that short channel effects (SCEs) in this structure is suppressed because of the perceivable step in the surface potential which screens the drain potential. We demonstrate that the proposed model exhibits significantly reduced SCEs, thus make it a more reliable device configuration for high speed wireless communication than the conventional single material surrounding gate (SMSG) MOSFETs.
N. B. Balamurugan,K. Sankaranarayanan,M. Suguna 대한전자공학회 2008 Journal of semiconductor technology and science Vol.8 No.1
In this Paper, we present a scaling theory for dual material surrounding gate (DMSGTs) MOSFETs, which gives a guidance for the device design and maintaining a precise subthreshold factor for given device parameters. By studying the subthreshold conducting phenomenon of DMSGTs, the effective conductive path effect (ECPE) is employed to acquire the natural length to guide the design. With ECPE, the minimum channel potential is used to monitor the subthreshold behavior. The effect of ECPE on scaling factor significantly improves the subthreshold swing compared to conventional scaling rule. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.
N.B.Balamurugan,K.Sankaranarayanan,M.Fathima John 대한전자공학회 2009 Journal of semiconductor technology and science Vol.9 No.2
The prominent advantages of Dual Material Surrounding Gate (DMSG) MOSFETs are higher speed, higher current drive, lower power consumption, enhanced short channel immunity and increased packing density, thus promising new opportunities for scaling and advanced design. In this Paper, we present Transconductance-to-drain current ratio and electric field distribution model for dual material surrounding gate (DMSGTs) MOSFETs. Transconductance-to-drain current ratio is a better criterion to access the performance of a device than the transconductance. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.
Balamurugan, N.B.,Sankaranarayanan, K.,John, M.Fathima The Institute of Electronics and Information Engin 2009 Journal of semiconductor technology and science Vol.9 No.2
The prominent advantages of Dual Material Surrounding Gate (DMSG) MOSFETs are higher speed, higher current drive, lower power consumption, enhanced short channel immunity and increased packing density, thus promising new opportunities for scaling and advanced design. In this Paper, we present Transconductance-to-drain current ratio and electric field distribution model for dual material surrounding gate (DMSGTs) MOSFETs. Transconductance-to-drain current ratio is a better criterion to access the performance of a device than the transconductance. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.
Balamurugan, N.B.,Sankaranarayanan, K.,Amutha, P.,John, M. Fathima The Institute of Electronics and Information Engin 2008 Journal of semiconductor technology and science Vol.8 No.3
A new two dimensional (2-D) analytical model for the Threshold Voltage on dual material surrounding gate (DMSG) MOSFETs is presented in this paper. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expression for the threshold voltage and sub-threshold swing is derived. It is seen that short channel effects (SCEs) in this structure is suppressed because of the perceivable step in the surface potential which screens the drain potential. We demonstrate that the proposed model exhibits significantly reduced SCEs, thus make it a more reliable device configuration for high speed wireless communication than the conventional single material surrounding gate (SMSG) MOSFETs.
Triple Material Surrounding Gate (TMSG) Nanoscale Tunnel FET-Analytical Modeling and Simulation
Vanitha, P.,Balamurugan, N.B.,Priya, G. Lakshmi The Institute of Electronics and Information Engin 2015 Journal of semiconductor technology and science Vol.15 No.6
In the nanoscale regime, many multigate devices are explored to reduce their size further and to enhance their performance. In this paper, design of a novel device called, Triple Material Surrounding Gate Tunnel Field effect transistor (TMSGTFET) has been developed and proposed. The advantages of surrounding gate and tunnel FET are combined to form a new structure. The gate material surrounding the device is replaced by three gate materials of different work functions in order to curb the short channel effects. A 2-D analytical modeling of the surface potential, lateral electric field, vertical electric field and drain current of the device is done, and the results are discussed. A step up potential profile is obtained which screens the drain potential, thus reducing the drain control over the channel. This results in appreciable diminishing of short channel effects and hot carrier effects. The proposed model also shows improved ON current. The excellent device characteristics predicted by the model are validated using TCAD simulation, thus ensuring the accuracy of our model.
Analysis of Tunnelling Rate Effect on Single Electron Transistor
Sheela. L,N. B. Balamurugan,S. Sudha,J. Jasmine 대한전기학회 2014 Journal of Electrical Engineering & Technology Vol.9 No.5
This paper presents the modeling of Single Electron Transistor (SET) based on Physical model of a device and its equivalent circuit. The physical model is derived from Schrodinger equation. The wave function of the electrode is calculated using Hartree-Fock method and the quantum dot calculation is obtained from WKB approximation. The resulting wave functions are used to compute tunneling rates. From the tunneling rate the current is calculated. The equivalent circuit model discuss about the effect of capacitance on tunneling probability and free energy change. The parameters of equivalent circuit are extracted and optimized using genetic algorithm. The effect of tunneling probability, temperature variation effect on tunneling rate, coulomb blockade effect and current voltage characteristics are discussed.