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Nanoscale Resistive Switching of a Copper–Carbon-Mixed Layer for Nonvolatile Memory Applications
Hyejung Choi,Myeongbum Pyun,Tae-Wook Kim,Hasan, M.,Rui Dong,Joonmyoung Lee,Ju-Bong Park,Jaesik Yoon,Dong-jun Seong,Takhee Lee,Hyunsang Hwang IEEE 2009 IEEE electron device letters Vol.30 No.3
<P>The nanoscale resistance switching property of copper-carbon-mixed (Cu-C) layer was investigated for nonvolatile memory applications. The Cu-C layer of the cross-point cell array showed typical filament switching with two orders of on/off ratio, exhibiting stable resistance switching and a narrow distribution of set and reset voltages in the nanoscale junction. In addition, we investigated the area dependence of operation current. Based on these results and current-voltage dependence on temperature, we discussed a potential switching mechanism of Cu-C layer.</P>
A Materials Approach to Resistive Switching Memory Oxides
Musarrat Hasan,Hyunsang Hwang,Rui Dong,Dongsoo Lee,Dong-jun Seong,Hye jung Choi,Myeongbum Pyun 대한전자공학회 2008 Journal of semiconductor technology and science Vol.8 No.1
Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides (Nb₂O5, and ZrOx) and subsequently the resistive switching of CuxO and heavily Cu-doped MoOx film for their compatibility with modern transistor-process cycles. Single-crystalline Nb-doped SrTiO₃ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.