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Self-selective fine metal line coating using surface energy differences
Mun, Mu Kyeom,Kim, Doo San,Yeom, Geun Young,Kim, Dong Woo Elsevier 2018 MICROELECTRONIC ENGINEERING Vol.187 No.-
<P><B>Abstract</B></P> <P>Self-selective coating is a new coating process that utilizes surface energy differences for metal ink coating. Hydrophobic and hydrophilic areas are defined on carbon black coated Polyimide (PI) substrate surface using atmospheric plasmas. At this state, when Ag ink is sprayed on PI, metal line is self-formed on hydrophilic surface due to its surface energy differences. As a result, an Ag ink line width of less than 6μm could be formed on the PI surface after removing the carbon black. Due to the formation of the Ag line on the hydrophilic PI surface, the adhesion force of the Ag ink formed on the PI surface was ~64% higher than that of the Ag ink formed on the hydrophobic PI surface.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Metal line in flexible device was made using new direct patterning method. </LI> <LI> Surface energy differences were used for direct patterning. </LI> <LI> Line width narrower than 6um was acquired by coating Ag ink on hydrophilic surface. </LI> <LI> Adhesion forces between the substrate were enhanced by 64% compared to that of hydrophobic substrate. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Nanoparticles Synthesis and Modification using Solution Plasma Process
Mun, Mu Kyeom,Lee, Won Oh,Park, Jin Woo,Kim, Doo San,Yeom, Geun Young,Kim, Dong Woo The Korean Vacuum Society 2017 Applied Science and Convergence Technology Vol.26 No.6
Across the most industry, the demand for nanoparticles is increasing. Therefore, many studies have been carried out to synthesize nanoparticles using various methods. The aim of this paper is to introduce an industry-applicable as well as financially and environmentally effective solution plasma process. The solution plasma process involves fewer chemicals than the traditional kit, and can be used to replace many of the chemical agents employed in previous synthesis of nanoparticles into plasma. In this study, this process is compared to the wet-reaction process that has thus far been widely used in the most industry. Furthermore, the solution plasma process has been classified into four different types (in-solution, out of solution, direct type, and remote type), according to its plasma occurrence position and plasma types. Thus, the source of radicals, nanoparticle synthesis, and modification methods are explained for each design. Lastly, unlike nanoparticles with hydrophilic functional groups that are made inside the solution, a nanoparticle synthesis and modification method to create a hydrophobic functional group is also proposed.
Plasma press for improved adhesion between flexible polymer substrate and inorganic material
Mun, Mu Kyeom,Kim, Doo San,Kim, Dong Woo,Yeom, Geun Young Butterworth-Heinemann Ltd. 2019 International journal of adhesion & adhesives Vol.89 No.-
<P><B>Abstract</B></P> <P>A novel adhesion process called “plasma press” has been investigated for achieving stronger bonding between two different materials. It was first developed to be applied in multilayer flexible printed circuit boards for next generation flexible mobile electronics. The plasma process is a hot pressing method employing plasma between the two materials in order to activate the material surfaces. Compared to the conventional hot-pressed sample, the plasma-pressed sample exhibited up to 130% higher adhesion strength. The stronger bond strength achieved in the plasma-pressed sample is attributed to the formation of active carboxyl functional groups and dangling bonds on the material surfaces by the presence of the plasma during the hot pressing process for bonding.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Two different materials can be strongly bonded when they are glued together while the plasma between the two materials is on. </LI> <LI> Due to the unsaturated bonding that exists on the surfaces of the materials when the plasma between the materials is on, strong atomic bonding can be achieved. </LI> <LI> In addition, when the plasma is on, due to the active species between the two materials during the bonding process, stronger bonding between the two materials is possible. </LI> <LI> Lower surface contamination of the materials during the bonding process is also achievable, compared to during the bonding process conducted without plasma or after the plasma process. </LI> <LI> Lower temperature press bonding is possible during the hot press bonding, which makes it possible to use low temperature substrates as bonding materials. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Atomic layer etching of InGaAs by controlled ion beam
Park, Jin Woo,Kim, Doo San,Mun, Mu Kyeom,Lee, Won Oh,Kim, Ki Seok,Yeom, Geun Young IOP 2017 Journal of Physics. D, Applied Physics Vol.50 No.25
<P>Atomic layer etching (ALE) could be an important next-generation etching technique, applicable to various semiconductor materials including III–V compound materials such as indium gallium arsenide (InGaAs) which has high carrier mobility, an advantageous characteristic in nanoscale electronic devices. In this study, the ALE characteristics of InGaAs have been investigated using a reactive ion beam technique. For the ALE of InGaAs, chlorine radicals/low-energy (10–19 eV) reactive ions and low-energy (5–8 eV) Ar<SUP>+</SUP> ions were used for adsorption and desorption, respectively, during the etch cycle to precisely control the etch depth and to minimize the surface damage of the InGaAs. By using the ALE technique, a constant etch rate of 1.1 Å/cycle could be obtained for InGaAs, as well as an infinite etch selectivity of InGaAs over various materials such as photoresist, silicon, amorphous carbon layer, SiO<SUB>2</SUB>, and HfO<SUB>2</SUB>. The surface composition and surface roughness of the InGaAs after ALE were similar to those of as-received un-etched InGaAs.</P>