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실리콘 직접 접합 / 전기화학적 식각정지를 이용한 실리콘 다이아프램의 형성과 실리콘 압력센서 제조에의 응용
주병권,하병주,김근섭,송만호,김성환,김철주,차균현,오명환 ( B . K . Ju,B . J . Ha,K . S . Kim,M . H . Song,S . H . Kim,C . J . Kim,K . H . Tchah,M . H . Oh ) 한국센서학회 1994 센서학회지 Vol.3 No.3
A new type of Si diaphragm was fabricated using Si-wafer direct bonding and two-step electrochemical etch-stopping methods. Using the new diaphragm structure in mechanical sensors, more precise control of cavity depth and diaphragm thickness was achievable. Also, the propagation of the stress, which was generated near the bonding interface, to the surface can be avoided. Finally, a piezoresistive-type Si pressure sensor was fabricated utilizing the diaphragm and a digital pressure gauge, which can display units of pressure, was realized.