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Kim, S. S.,Lucovsky, G. 대한전자공학회 1989 ICVC : International Conference on VLSI and CAD Vol.1 No.1
Device-quality ultra-thin ($lt;150Å) gate oxides have been deposited at low substrate temperatures on Si by Remote Plasma Enhanced Chemical Vapor Deposition (Remote PECVD) technique. A remote hydrogen plasma is used to obtain atomically clean silicon surface just prior to deposition. After conventional post-metalization-anneal, Si:SiO₂ interface state densities of 2.8×10^(10) cm^(-2)eV^(-1) were measured with average oxide breakdown field of 8 MV/cm from MOS capacitors formed by oxide deposited at 200℃.
SURFACE TREATMENTS AND NATIVE OXIDE FORMATION ON GaAs
Choi, Seong S.,Park, K.,Choi, S. W.,Kim, S. S.,Bachmann, K. J.,Lucovsky, G. 대한전자공학회 1989 ICVC : International Conference on VLSI and CAD Vol.1 No.1
Several surface treatments have been performed on (100), n-type GaAs wafers in order to remove superficial native oxide layers, and for surface passivation. Native oxides were removed by exposure to gaseous HCl, liquid HCl, rising in deionized water (DIW), $quot;photochemical$quot; rinsing, and solutions of Na₂S and H₂O. Significant increases in photoluminescence were observed after the photochemical, and Na₂S treatments. GaAs surfaces were characterized after these treatments by Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS).