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Kim, Soo Young,Thanh, Xuan Tran Thi,Jeong, Kwangjoon,Kim, Seong Bin,Pan, Sang O,Jung, Che Hun,Hong, Seol Hee,Lee, Shee Eun,Rhee, Joon Haeng American Society for Microbiology 2014 Infection and immunity Vol.82 No.1
<P><I>Vibrio vulnificus</I> is a halophilic pathogenic bacterium that is motile due to the presence of a single polar flagellum. <I>V. vulnificus</I> possesses a total of six flagellin genes organized into two loci (<I>flaFBA</I> and <I>flaCDE</I>). We proved that all six of the flagellin genes were transcribed, whereas only five (FlaA, -B, -C, -D, and -F) of the six flagellin proteins were detected. To understand roles of the six <I>V. vulnificus</I> flagellins in motility and virulence, mutants with single and multiple flagellin deletions were constructed. Mutations in <I>flaB</I> or <I>flaC</I> or the <I>flaCDE</I> locus resulted in a significant decrease in motility, adhesion, and cytotoxicity, whereas single mutations in the other flagellin genes or the <I>flaFBA</I> locus showed little or no effect. The motility was completely abolished only in the mutant lacking all six flagellin genes (<I>flaFBA flaCDE</I>). Surprisingly, a double mutation of <I>flaB</I> and <I>flaD</I>, a gene sharing 99% identity with the <I>flaB</I> at the amino acid level, resulted in the largest decrease in motility, adhesion, and cytotoxicity except for the mutant in which all six genes were deleted (the hexa mutant). Additionally, the 50% lethal doses (LD<SUB>50</SUB>s) of the <I>flaB flaD</I> and the <I>flaFBA flaCDE</I> mutants increased 23- and 91-fold in a mouse model, respectively, and the <I>in vitro</I> and <I>in vivo</I> invasiveness of the mutants was significantly decreased compared to that of the wild type. Taken together, the multiple flagellin subunits differentially contribute to the flagellum biogenesis and the pathogenesis of <I>V. vulnificus</I>, and among the six flagellin genes, <I>flaB</I>, <I>flaD</I>, and <I>flaC</I> were the most influential components.</P>
Kim, Dae-Ub,Ryoo, Jeong-dong,Cheung, Taesik,Song, Jongtae,Kim, Kwangjoon IEEE 2018 Journal of Lightwave Technology Vol.36 No.13
<P>In this paper, we discuss the issues of supporting protection switching in multiple recovery domains (MRDs). In MRDs, dual node interconnection (DNI) between two adjacent domains is essential to provide reliable services for customers whose traffic traverses multiple domains. Existing linear protection switching solutions in packet transport networks, such as multiprotocol label switching—transport profile (MPLS-TP) and Ethernet, support protection of an end-to-end flow between two end nodes in a recovery domain; however, they do not provide DNI capability between two recovery domains. We propose a DNI scheme with linear protection switching technology and analyze its advantages. In the case of a large number of connections affected by a single failure in MRDs protected by linear protection, traffic recovery can be delayed owing to the signaling associated with excessive simultaneous signal fail triggers. We design a collective interconnection message (CIM) scheme that improves the performance of linear protection DNI (LP-DNI) in MRDs and confirms that the CIM mechanism reduces restoration time significantly. By extensive simulations on link and node failures scenarios, we investigate different combinations of LP-DNI and existing ring protection processes to establish the influence of service resiliency in MRDs.</P>
The Growth and Photoconductive Characteristics of ?? Thin Films by the Hot Wall Epitaxy
Hong, Kwangjoon,Suh, Sangseok,Jeong, Junwoo,You, Sangha,Choi, Seungpyung,Lee, Koankio,Lee, Sangyoul,Kim, Haeyeon,Moon, Jongdae,Shin, Yongjin,Kim, Haesuk CHOSUN UNIVERSITY 1997 Basic Science and Engineering Vol.1 No.1
The CdS₁? Se? thin films were grown on the GaAs(100) wafers by a Hot Wall Epitaxy method (HWE). The temperatures the source and the substrate temperature are 580℃ and 440℃ respectively. The crystalline structure of thin films was investigated by double crystal X-ray diffraction (DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(r), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time.
The Growth and Photoconductive Characteristics of ZnGa₂Se₄ Epilayers by the Hot Wall Epitaxy
Hong, Kwangjoon,Suh, Sangseok,Jeong, Junwoo,You, Sangha,Lee, Koankio,Choi, Seungpyung,Lee, Sangyoul,Kim, Haeyeon,Moon, Jongdae,Shin, Yongjin,Kim, Haesuk CHOSUN UNIVERSITY 1997 Basic Science and Engineering Vol.1 No.1
The stochiometric mix of evaporating materials for the ZnGa₂Se₄single crystal thin films were prepared from horizental furnace. The polycrystal structure obtaind from the power x-ray diffraction was defect chalcopyrite. The lattice costants a。and c。were a。=5.51 A, c。=10.98 A. To obtains the single crystal thin films, ZnGa₂Se₄mixed crystal were deposited on throughly etched Si(100) by the Hot Wall Epitaxy (HWE) system. The temperates of the source and the substrate were 590℃ and 450℃, respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (r), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time.