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Investigations on the structural, optical and electronic properties of Nd doped ZnO thin films
Subramanian, M,Thakur, P,Gautam, S,Chae, K H,Tanemura, M,Hihara, T,Vijayalakshmi, S,Soga, T,Kim, S S,Asokan, K,Jayavel, R Institute of Physics [etc.] 2009 Journal of Physics. D, Applied Physics Vol.42 No.10
<P>We report the synthesis and characterization of Nd doped ZnO thin films grown on Si (1 0 0) substrates by the spray pyrolysis method. The surface morphology of these thin films was investigated by scanning electron microscopy and shows the presence of randomly distributed structures of nanorods. Grazing angle x-ray diffraction studies confirm that the doped Nd ions occupied Zn sites and these samples exhibited a wurtzite hexagonal-like crystal structure similar to that of the parent compound, ZnO. The micro-photoluminescence measurement shows a decrease in the near band edge position with Nd doping in the ZnO matrix due to the impurity levels. The near-edge x-ray absorption fine structure (NEXAFS) measurements at the O K edge clearly exhibit a pre-edge spectral feature which evolves with Nd doping, suggesting incorporation of more charge carriers in the ZnO system and the presence of strong hybridization between O 2p–Nd 5d orbitals. The Nd M<SUB>5</SUB> edge NEXAFS spectra reveal that the Nd ions are in the trivalent state.</P>
On the Study of the Atomic Structures of Nitrogen-Ion-Implanted InP
santhakumar K,이철로,아소칸,Hayakawa Y,Jayavel p,Tetsuo soga 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.2I
Nitrogen ions at doses of 1 $\times$ 10$^{13}$ -- 1 $\times$ 10$^{15}$ cm$^{-2}$ have been implanted in semi-insulating (SI) InP (100) single-crystal substrates. The surface topography of as-grown and implanted samples has been investigated using atomic force microscopy (AFM). The as-grown InP surface has minimum roughness and appears to be smooth. Angstrom-level pits-type defects are seen on the InP surface after the implantation. Root-mean-square roughness values measured for the as-grown and the implanted InP samples. The surface roughness increased with increasing the nitrogen-ion dose monotonically up to 5 $\times$ 10$^{14}$ cm$^{-2}$ and decreased at a dose of 1 $\times$ 10$^{15}$ cm$^{-2}$ the increase in the roughness was due to implantation-induced damages, and the decrease at higher dose 10$^{15}$ cm$^{-2}$ might have been be due to plastic deformation on the surface associated with a surface amorphisation. Post-implantation annealing smoothened the surface. Roughness values decreased relative to the implanted samples up to a dose 5 $\times$ 10$^{14}$ cm$^{-2}$, which indicates that the defects were partially annealed. At a higher dose of 10$^{15}$ cm$^{-2}$, there was no change in roughness value in spite of annealing. This indicates that the InP surface had been plastically deformed leading to amorphization at higher dose. Further, Raman characterization of these implanted samples clearly supports the surface amorphization at higher doses.