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Cu 기판위에 성장한 MgO, MgAl₂O₄와 MgAl₂O₄/MgO 박막의 집속이온빔을 이용한 스퍼터링수율 측정과 이차전자방출계수 측정
정강원(K. W. Jung),이혜정(H. J. Lee),정원희(W. H. Jung),오현주(H. J. Oh),박철우(C. W. Park),최은하(E. H. Choi),서윤호(Y. H. Seo),강승언(S. O. Kang) 한국진공학회(ASCT) 2006 Applied Science and Convergence Technology Vol.15 No.4
MgAl₂O₄ 막은 MgO 보호막 보다 단단하며 수분 흡착 오염문제에 상당히 강한 특성을 가진다. 본 연구에서 AC-PDP의 유전체보호막으로 사용되는 MgO 보호막의 특성을 개선하기 위해 MgAl₂O₄/MgO 이중층 보호막을 제작하여 특성을 조사하였다. 전자빔 증착기를 사용하여 Cu 기판에 MgO와 MgAl₂O₄을 각각 1000 Å 두께로 증착, MgAl₂O₄/MgO을 200/800 Å 두께로 적층 증착 후, 이온빔에 의한 충전현상을 제거하기 위해 Al을 1000 Å 두께로 증착하였다. 집속 이온빔(focused ion beam ; FIB)장치를 이용하여 10 ㎸에서 14 ㎸까지 이온빔 에너지에 따라 MgO는 0.364 ~ 0.449 값의 스퍼터링 수율에서 MgAl₂O₄/MgO을 적층함으로 24 ~ 30 % 낮아진 0.244 ~ 0.357 값의 스퍼터링 수율이 측정되었으며, MgAl₂O₄는 가장 낮은 0.088 ~ 0.109 값의 스퍼터링 수율이 측정되었다. g-집속이온빔(g-FIB)장치를 이용하여 Ne? 이온 에너지를 50 V에서 200 V까지 변화 시켜 MgAl₂O₄/MgO와 MgO는 0.09 ~ 0.12의 비슷한 이차전자방출 계수를 측정 하였다. AC-PDP셀의 72시간 열화실험 후 SEM 및 AFM으로 열화된 보호막의 표면을 관찰하여 기존의 단일 MgO 보호막과 MgAl₂O₄/MgO의 적층보호막의 열화특성을 살펴보았다. It is known that MgAl₂O₄ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of MgAl₂O₄ and MgAl₂O₄/MgO layers as dielectric protection layers for AC-PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and MgAl₂O₄ films both with a thickness of 1000 Å and MgAl₂O₄/MgO film with a thickness of 200/800 Å were grown on the Cu substrates using the electron beam evaporation. 1000 Å thick aluminium layers were deposited on the protective layes in order to avoid the charging effect of Ga? ion beam while the focused ion beam(FIB)is being used. We obtained sputtering yieds for the MgO, MgAl₂O₄ and MgAl₂O₄/MgO films using the FIB system. MgAl₂O₄/MgO protective layers have been found th show 24 ~ 30% lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated Ga? ion beam with energies ranged from 10 ㎸ to 14 ㎸. And MgAl₂O₄ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the γ-FIB. MgAl₂O₄/MgO and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated Ne+ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and MgAl₂O₄/MgO protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that MgAl₂O₄/MgO protective layer has superior hardness and degradation resistance properties to MgO protective layer.
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Kim, K.,Kim, I.,Maiti, N.,Kwon, S.J.,Bucella, D.,Egorova, O.A.,Lee, Y.S.,Kwak, J.,Churchill, D.G. Pergamon Press 2009 Polyhedron Vol.28 No.12
Herein the synthesis and binding studies of novel trans-A<SUB>2</SUB>B-corrole and trans-A<SUB>2</SUB>B<SUB>2</SUB>-porphyrin derivatives are presented in comparing manganese(III)-organophosphonate (OP) binding (e.g., M<SUP>n+</SUP>←O?PR(OR)<SUB>2</SUB>) capabilities. H<SUB>3</SUB>(PFP-VC) [PFP-VC=5,15-di(pentafluorophenyl)-10-(3-vinylphenyl)corrolate] was synthesized by way of literature procedures and was characterized by a variety of 2-D NMR spectroscopic techniques and single-crystal X-ray diffraction. These compounds represent the first example of 3-vinyl-phenyl-containing meso-substituted corroles or porphyrins. Mn(PFP-VC) (3) was treated separately with (CH<SUB>3</SUB>CH<SUB>2</SUB>O)<SUB>2</SUB>P?O(C<SUB>3</SUB>H<SUB>6</SUB>NMe<SUB>2</SUB>), (C<SUB>4</SUB>H<SUB>9</SUB>O)<SUB>2</SUB>P?O(Me), (C<SUB>2</SUB>H<SUB>5</SUB>O)<SUB>2</SUB>P?O(CH<SUB>2</SUB>COCH<SUB>3</SUB>), (CH<SUB>3</SUB>CH<SUB>2</SUB>O)<SUB>2</SUB>P?O(Me), to give 1:1 adducts, as determined by UV-Vis spectroscopy (Job Plot), giving a red shift; Ph<SUB>3</SUB>P?O, was also found to bind, but very weakly. The trans-A<SUB>2</SUB>B<SUB>2</SUB>-porphyrin analogue Mn(PFP-VP) (4) was also prepared by way of a literature procedure; related binding studies gave 1:1 organophosphonate-Mn(PFP-VP) adducts (Job Plot). A clean blue shift occurred for the Mn-porphyrins at higher organophosphonate loadings (K<SUB>a</SUB> values: 6.7 (0.9)-11.9 (0.4)M<SUP>-1</SUP>). DFT geometry optimizations of O?P(OMe)<SUB>2</SUB>Me binding and formal Mn-O or P-O cleavage products in the unsubstituted neutral Mn-corrolato and -porphyrinato systems with a range of metal-based spin states revealed greatest stability in formal phosphoryl oxygen binding (energies: 11-13kcal/mol) for the Mn-corrole (singlet); the Mn-porphyrin (sextet) was also quite stable.
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CHF₃ / C₂F6 플라즈마에 의한 실리콘 표면 잔류막의 특성
권광호(K.-H. Kwon),박형호(H.-H. Park),이수민(S. M. Lee),강성준(S. J. Kang),권오준(O.-J. Kwon),김보우(B.W. Kim),성영권(Y.-K. Sung) 한국진공학회(ASCT) 1992 Applied Science and Convergence Technology Vol.1 No.1
실리콘을 CHF₃/C₂F_6 가스 플라즈마를 이용하여 식각하면 실리콘위에 탄소, 불소 및 산소로 이루어진 잔류막이 형성된다. 이 잔류막을 XPS로 분석한 결과 탄소는 C-Si, C-Si, C-C/H, C-CF_x(x≤3), C-F, C-F₂, C-F₃ 결합을 하고 있으며, 불소는 F-Si, F-C 및 F-O 결합으로 이루어져 있음을 알았다. 한편 산소는 O-Si 및 O-F 결합으로, 실리콘은 Si-Si, Si-C 및 Si-O 결합상태를 나타낸다. 잔류막의 수직분포 연구를 통하여 Si-O 및 Si-C 결합이 탄소와 불소의 결합층 아래에 존재하고, 잔류막의 표면부에 F-O 결합이 분포함을 알았다. 또한 건식식각 변수가 잔류막 형성에 미치는 영향이 조사되었으며 CHF₃/C₂F_6 가스 유량비, RF power 벚 압력 등이 잔류막의 두께, 조성비 및 잔류막의 결합상태에 영향을 미침을 알 수 있었다. Si surfaces exposed to CHF₃/C₂F_6 gas plasmas in reactive ion etching (RIE) have been characterized by X-ray photoelectron spectroscopy (XPS). CHF₃/C₂F_6 gas plasma exposure of Si surface leads to the deposition of residual film containing carbon and fluorine. The narrow scan spectra of C 1s show various bonding states of carbon as C-Si, C-Si, C-C/H, C-CF_x(x≤3), C-F, C-F₂, and C-F₃. The chemical bonding states of fluorine are described with F-Si, F-C, and F-O. And the oxygen and silicon are also detected. The effects of parameters for reactive ion etching as CHF₃/C₂F_6 gas ratio, RF power, and pressure are investigated.
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李基寧,李根培,李春寧,全鉉五 서울대학교 1958 서울대학교 論文集 Vol.7 No.-
Vitamin B_12 contents of a variety of conventional Korean foods were bioassayed employing Euglena gracilis. On the basis of fresh weight animal organs and fremented sea foods are excellent sources of vitamin B_12. Several foods of plant origin were found to be fair sources of the vitamin B_12.
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Temperature dependence of magnetoimpedance effect in amorphous CO?? Fe₄NiB?? Si? ribbon
Lee, Heebok,Cho, W.S,Kim, C.O,Kim, T.K,Kim, Y.K 公州大學校 基礎科學硏究所 1998 自然科學硏究 Vol.7 No.-
The temperature dependence of the magnetoimpedance (MI) effect is important both for scientific study and for thermal stability of MI sensors. We have performed the measurement of MI effect in amorphous Co66Fe4 NiB14Si15 (Metglas 2714A) ribbon from a cryogenic chamber where the temperature of the sample can vary from 10 to 300 K. The ac current was fixed at 10 mA for all measured frequencies ranging from 100 kHz to 10 MHz. The magncioimpedancc ratio (MIR) was revealed the drastic increment as a function of MIR(T)=MIR(O)exp(cT2), where c is a constant. The measured MIR values at room temperature are usually 2-3 times larger than the data measured at 10 K for all measured frequencies. However, the shapes of the MIR curves are remained. This result shows the potential application of the MI effect for a temperature sensor.
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