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Eu Doping Effect on the Radiation Resistance in Bi₄Ge₃O_12(BGO) Scintillator
KIM, Junghwan,JIN, Byung Moon,YU, Nan-Ei,JOH, Soo-Young,KIM, Jung-Nam 동의대학교 기초과학연구소 1999 基礎科學硏究論文集 Vol.9 No.1
Bi₄Ge₃O_12(BGO) that is well known as a scintillator was grown by a Czochralski method. The Eu-doped BGO crystal has higher radiation resistance than the normal BGO crystal under the same irradiation condition. In order to understand a mechanism of radiation resistance in Eu-doped BGO, fluorescence lifetimes, radiation induced-absorption, excitation, emission, and thermoluminescence spectra were studied for the different doses and at different temperatures. It is found that the shallow electron trapping centers due to Eu^3+ ion and the charge transfer state of Eu^3+ ion are playing a key role to the enhanced radiation resistance in the Eu-doped BGO crystal.
김성철,황해선,정중현,도시홍,김종일,김중환 동의대학교 기초과학연구소 1998 基礎科學硏究論文集 Vol.8 No.1
Bismuth germanate crystals well known as scintillator were grown by Czochralski method. In order to understand a mechanism of radiation resistance in Eu-doped BGO, we measured radiation induced-absorption spectra, excitation spectra, emission spectra and luminescence lifetimes of BGO crystals. We found that the charge transfer state of Eu^3+ ion is to play a key role to enhance the radiation resistance in BGO crystal. The ^5D_0 emission of Eu^3+ ions that is not suitable for the radiation detectors due to a long decay time was found to be increased with increasing europium concentration. In the BGO crystal doped with 0.1 mole%, the density of radiation induced color centers was reduced about twenty times and the light output of ^5D_0 was negligible by comparing to that of BGO.