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Sol-Gel derived Ga-In-Zn-O Semiconductor Layers for Solution-Processed Thin-Film Transistors
문주호,김동주,정선호,Jooho Moon,Chiyoung Park,Minhyon Jeon,Won-Chol Sin,Jinha Jung,Hyun-Jung Woo,Seung-Hyun Kim,Jowoong Ha 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
We have prepared a solution processed oxide semiconductor layer for thin-film transistors. The oxide semiconductor thin-film were prepared by spin coating a sol-gel precursor solution based on Ga and In-co-doped ZnO (GIZO). The sol-gel-derived GIZO film were uniform and have smooth surface morphology (rms. roughness ~0.7 nm). The device performance of the solution-processed thin-flm transistors was analyzed as a function of the doping concentration and the annealing temperature. The transistors annealed at 450 ℃ showed clear switching behavior and output characteristic with relatively high field effect mobility (~0.1 ㎠/V·s) and low threshold voltage (~5.4 V). Even when annealed at 300 ℃, they showed reasonable field effect mobility (~0.03 cm2/Vs) and a lower threshold voltage (~-0.2 V). Our findings demonstrate the feasibility of using sol-gel-based oxide semiconductor transistors for successful application to cost-effective and mass-producible display and optoelectronic devices with enhanced device performance. We have prepared a solution processed oxide semiconductor layer for thin-film transistors. The oxide semiconductor thin-film were prepared by spin coating a sol-gel precursor solution based on Ga and In-co-doped ZnO (GIZO). The sol-gel-derived GIZO film were uniform and have smooth surface morphology (rms. roughness ~0.7 nm). The device performance of the solution-processed thin-flm transistors was analyzed as a function of the doping concentration and the annealing temperature. The transistors annealed at 450 ℃ showed clear switching behavior and output characteristic with relatively high field effect mobility (~0.1 ㎠/V·s) and low threshold voltage (~5.4 V). Even when annealed at 300 ℃, they showed reasonable field effect mobility (~0.03 cm2/Vs) and a lower threshold voltage (~-0.2 V). Our findings demonstrate the feasibility of using sol-gel-based oxide semiconductor transistors for successful application to cost-effective and mass-producible display and optoelectronic devices with enhanced device performance.
LSGM계 고체산화물 연료전지의 계면안정성을 위한 완층층의 도입
김광년,문주호,손지원,김주선,이해원,이종호,김병국,Kim, Kwang-Nyeon,Moon, Jooho,Son, Ji-Won,Kim, Joosun,Lee, Hae-Weon,Lee, Jong-Ho,Kim, Byung-Kook 한국세라믹학회 2005 한국세라믹학회지 Vol.42 No.9
In order to find a proper buffering material which can prohibit an unwanted interfacial reaction between anode and electrolyte of LSGM-based SOFC, we examined a gadolinium doped ceria and scandium doped zirconia as a candidate. For this examination, we investigated the microstructural and phase stability of the interface under different buffering layer conditions. According to the investigation, ceria based material induced a serious La diffusion out of the LSGM electrolyte resulted in the formation of very resistive $LaSrGa_3O_7$ phase at the interface. On the other hand zirconia based material was directly reacted with LSGM electrolyte and thus produced very resistive reaction products such as $La_2Zr_2O_7,\;Sr_2ZrO_4,\;LaSrGaO_4\;and\;LaSrGa_3O_7$. From this study we found that an improper buffering material induced the higher internal cell resistance rather than an interfacial stability.
LSGM계 고체산화물 연료전지의 전기화학적 성능에 미치는 계면반응층의 영향
김광년,문주호,김형철,손지원,김주선,이해원,이종호,김병국,Kim, Kwang-Nyeon,Moon, Jooho,Kim, Hyoungchul,Son, Ji-Won,Kim, Joosun,Lee, Hae-Weon,Lee, Jong-Ho,Kim, Byung-Kook 한국세라믹학회 2005 한국세라믹학회지 Vol.42 No.10
LSGM is known to show very serious interfacial reaction with other unit cell components, such as electrode, electrode functional or buffering layers. Especially, the formation of very resistive LaSr$Ga_{3}$$O_{7}$ phase at the interface of an anode and an electrolyte is the most problematic one in LSGM-based SOFCs. In this study, we investigated the interfacial reactions in LSGM-based SOFCs under different unit cell configurations. According to the microstructural analysis on the interfacial layer between an electrolyte and its neighboring component, serious interfacial reaction zone was observed. From the electrical and electrochemical characterization of the cell, we found such an interfacial reaction zone not only increased the internal ohmic resistance but also decreased the OCV(Open Cell Voltage) of the unit cell, and thus consequently deteriorated the unit cell performance.
로보 디스펜싱을 이용하여 직접묘화방식으로 제조된 고출력 소형 고체산화물 연료전지
김용범,문주호,김주선,이종호,이해원,Kim, Yong-Bum,Moon, Jooho,Kim, Joosun,Lee, Jong-Ho,Lee, Hae-Weon 한국세라믹학회 2005 한국세라믹학회지 Vol.42 No.6
Line Shaped Solid Oxide Fuel Cell (SOFC) with multilayered structure has been fabricated via direct-writing process. The cell is electrolyte of Ni-YSZ cermet anode, YSZ electrolyte and LSM cathode. They were processed into pastes for the direct writing process. Syringe filled with each electrode and electrolyte paste was loaded into the computer-controlled robe-dispensing machine and the paste was dispensed through cylindrical nozzle of 0.21 mm in diameter under the air pressure of 0.1 tow onto a moving plate with 1.22 mm/s. First of all, the anode paste was dispensed on the PSZ porous substrate, and then the electrolyte paste was dispensed. The anode/electrolyte and the PSZ substrate were co-fired at $1350^{\circ}C$ in air atmosphere for 3 h. The cathode layer was similarly dispensed and sintered at $1200^{\circ}C$ for 1 h. All the electrode/electrolyte lines were visually aligned during the direct writing process. The effective reaction area of fabricated SOFC was $0.03 cm^2$, and the thickness of anode, electrolyte and cathode was 20 $\mu$m, 15 $\mu$m, and 10 $\mu$m, respectively. The single line-shaped SOFC fabricated by direct-writing process exhibited OCV of 0.95 V and maximum power density of $0.35W/cm^2$ at $810^{\circ}C$.
LSGM계 고체산화물 연료전지의 전해질-음극 사이의 계면안정성
김광년,문주호,손지원,김주선,이해원,이종호,김병국,Kim, Kwang-Nyeon,Moon, Jooho,Son, Ji-Won,Kim, Joosun,Lee, Hae-Weon,Lee, Jong-Ho,Kim, Byung-Kook 한국세라믹학회 2005 한국세라믹학회지 Vol.42 No.7
Interfacial reactions at LSGM electrolyte and NiO-GDC anode interfaces were thoroughly investigated with Environmental Scanning Electron Microscopy (ESEM-PHlLIPS XL-30) and Energy Dispersive X-ray (EDX-Link XL30). According to the analysis, serious reaction zone was observed at LSGM/NiO-GDC interface. It was found that the reaction layer was originated from the chemical reaction between NiO and LSGM. The reaction products were identified as La deficient form of LSGM based perovskite and Ni-La-O compounds such as LaSrGa$_{3}$O$_{7}$ and LaNiO$_{3}$ from the X-Ray Diffraction (XRD, Philips) analysis. According to the electrical characterization, interfacial layer was very electrically resistive which would be the cause of high internal resistance and low power generating characteristic of the unit cell.
CeO<sub>2</sub> 코팅을 통한 Cu 입자의 입성장 억제 효과에 관한 연구
유희준,문지웅,오유근,문주호,황해진,Yoo Hee-Jun,Moon Ji-Woong,Oh You Keun,Moon Jooho,Hwang Hae Jin 한국분말야금학회 2005 한국분말재료학회지 (KPMI) Vol.12 No.6
Copper is able to work as a current collector under wide range of hydrocarbon fuels without coking in Solid oxide fuel cells (SOFCs). The application of copper in SOFC is limited due to its low melting point, which result in coarsening the copper particle. This work focuses on the sintering of copper powder with ceria coating layer. Ceria-coated powder was prepared by thermal decomposition of urea in $Ce(NO_3)_3\cdot6H_2O$ solution, which containing CuO core particles. The ceria-coated powder was characterized by XRD, ICP, and SEM. The thermal stability of the ceria-coated copper in fuel atmosphere $(H_2)$ was observed by SEM. It was found that the ceria coating layer could effectively hinder the grain growth of the copper particles.
허철민,황종희,임태영,김진호,이미재,유종성,박태호,문주호,Huh, Cheolmin,Hwang, Jonghee,Lim, Tae-Young,Kim, Jin-Ho,Lee, MiJai,Yoo, Jong-Sung,Park, Tae-Ho,Moon, Jooho 한국재료학회 2012 한국재료학회지 Vol.22 No.12
Yellow phosphor dispersed color conversion glasses are promising phosphor materials for white LED applications because of their good thermal durability, chemical stability, and anti-ultraviolet property. Six color conversion glasses were prepared with high Tg and low Tg specimens of glass. Luminous efficacy, luminance, CIE (Commission Internationale de l'Eclairage) chromaticity, CCT (Correlated Color Temperature), and CRI (Color Rendering Index) of the color conversion glasses were analyzed according to the PL spectrum. Color conversion glasses with high Tg glass frit, sintered at higher temperature, showed better luminous properties than did color conversion glasses with low Tg glass frit. The characteristics of the color conversion glass depended on the glass composition rather than on the sintering temperature. The XRD peaks of the YAG phosphor disappeared in the color conversion glass with major components of $B_2O_3$-ZnO-$SiO_2$-CaO and, in the XRD results, new crystalline peaks of $BaSi_2O_5$ appeared in the color conversion glass with major components of $Bi_2O_3$-ZnO-$B_2O_3$-MgO. The characteristics of CIE chromaticity, CCT, and the CRI of low Tg color conversion glasses showed worse color properties than those of high Tg color conversion glasses. However, these color characteristics of low Tg glasses were improved by thickness variation. So color conversion glasses with good characteristics of both luminous and color properties were attained.
은 나노입자 박막 소결 및 나노초 레이저 어블레이션 특성
한세운(Sewoon Han),임태웅(Taewoong Lim),정재원(Jaewon Chung),김동조(Dongjo Kim),문주호(Jooho Moon) 대한기계학회 2006 대한기계학회 춘추학술대회 Vol.2006 No.6
Conventional integrated circuit fabrication processes are multi-step, involve high sintering temperature, toxic waste, and are therefore expensive. Therefore, employment of cost-effective drop on demand inkjet printing process is expected to give new opportunities in flexible electronics and other applications. However, the typical resolution of inkjet printing (=50~100㎛), which is mainly governed by the nozzle diameter, is an issue. In this work, sintering characteristics and ablation of Ag nanoparticles using frequency doubled Nd:YAG nanosecond laser were studied to apply for trimming electrical micro-conductor printed by inkjet. Ag nano particles dissolved in ethylene glycol was used and polyvinylpyrrolidone was added to prevent agglomeration. Here, nanoparticles are used to exploit the melting temperature depression compared to bulk material, so that printed metal nanoparticle film could be sintered at a reduced temperature compatible to polymer.