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Jo, Seong Ho,Kim, Hyun Woo,Song, Minkyung,Je, Nam Jin,Oh, Sung-hoon,Chang, Byoung-Yong,Yoon, Jinhwan,Kim, Joo Hyun,Chung, Bonghoon,Yoo, Seong Il American Chemical Society 2015 ACS APPLIED MATERIALS & INTERFACES Vol.7 No.33
<P>Nanoscale assemblies composed of different types of nanoparticles (NPs) can reveal interesting aspects about material properties beyond the functions of individual constituent NPs. This research direction may also represent current challenges in nanoscience toward practical applications. With respect to the assembling method, synthetic or biological nanostructures can be utilized to organize heterogeneous NPs in specific sites via chemical or physical interactions. However, those assembling methods often encounter uncontrollable particle aggregation or phase separation. In this study, we anticipated that the self-segregating properties of block copolymer micelles could be particularly useful for organizing heterogeneous NPs, because the presence of chemically distinct domains such as the core and the corona can facilitate the selective placement of constituent NPs in separate domains. Here, we simultaneously functionalized the core and the corona of micelles by Au NPs and Ag NPs, which exhibited plasmonic and catalytic functions, respectively. Our primacy question is whether these plasmonic and catalytic functions can be combined in the assembled structures to engineer the kinetics of a model chemical reaction. To test this hypothesis, the catalytic reduction of 4-nitrophenol was selected to evaluate the collective properties of the micellar assemblies in a chemical reaction.</P>
Short-channel effect and single-electron transport in individual indium oxide nanowires
Jung, Minkyung,Lee, Hyoyoung,Moon, Sunkyung,Song, Woon,Kim, Nam,Kim, Jinhee,Jo, Gunho,Lee, Takhee IOP Pub 2007 Nanotechnology Vol.18 No.43
<P>We have investigated the electric transport properties of individual In<SUB>2</SUB>O<SUB>3</SUB> nanowire devices. We have found that the gate modulation characteristics depend strongly on the channel length. If the channel length is greater than 450 nm, the gate modulation curve exhibited field-effect transistor behavior with dominant n-channel current at room temperature. With the decrease of the channel length, the leakage current is increased due to the short-channel effect. For such short-channel devices, the gate modulation curve exhibited quasi-periodic current oscillations at low temperature, which are attributed to the Coulomb blockade of single-electron tunneling. Some devices showed two-fold periodicity in the Coulomb diamonds which may arise from the spin degeneracy of the single-particle energy levels.</P>