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NANOCAD Framework for Simulation of Quantum Effects in Nanoscale MOSFET Devices
Seonghoon Jin,Chan Hyeong Park,In-Young Chuug,Young June Park,Hong Shick Min 대한전자공학회 2006 Journal of semiconductor technology and science Vol.6 No.1
We introduce our in-house program, NANOCAD, for the modeling and simulation of carrier transport in nanoscale MOSFET devices including quantum-mechanical effects, which implements two kinds of modeling approaches: the top-down approach based on the macroscopic quantum correction model and the bottom-up approach based on the microscopic non-equilibrium Green’s function formalism. We briefly review these two approaches and show their applications to the nanoscale bulk MOSFET device and silicon nanowire transistor, respectively.