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Effect of stiffness modulation on mechanical stability of stretchable a-IGZO TFTs
Park, Hyungjin,Cho, Kyoungah,Oh, Hyungon,Kim, Sangsig Elsevier 2018 Superlattices and microstructures Vol.117 No.-
<P><B>Abstract</B></P> <P>In this study, we fabricate the amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on a stretchable substrate with a buffer stage and investigate the mechanical stability and electrical characteristics when the length of the substrate is stretched by 1.7 times. The buffer stage is responsible for the stiffness modulation of the stretchable substrate. The mobility, the threshold voltage and the on/off ratio of the stretchable a-IGZO TFT are measured to be 18.1 cm<SUP>2</SUP>/V·s, 1 V, and 3 × 10<SUP>7</SUP>, respectively. Our simulation conducted by a three dimensional finite elements method reveals that the stiffness modulation reduces the stress experienced by the substrate in the stretched state by about one-tenth. In addition, the mechanical stability and electrical characteristics of the a-IGZO TFT are maintained even when the substrate is stretched by 1.7 times.</P> <P><B>Highlights</B></P> <P> <UL> <LI> We fabricate an a-IGZO TFT on a stretchable substrate with a buffer stage. </LI> <LI> The buffer stage results in the stiffness modulation of the stretchable substrate. </LI> <LI> The distribution of stress and strain about the substrate is analyzed by simulator. </LI> </UL> </P>
Neuromorphic System Based on CMOS Inverters and Si-Based Synaptic Device
Park, Jungjin,Kwon, Min-Woo,Kim, Hyungjin,Park, Byung-Gook American Scientific Publishers 2016 Journal of Nanoscience and Nanotechnology Vol.16 No.5
<P>We developed an analog neuron circuit that can work with Si-based synaptic devices. N-channel and p-channel synaptic devices connected to current mirrors constitute the synaptic connection and integration parts to implement the excitation and inhibition mechanisms of biological neurons. The normal inverter controlling delay time and the modified inverter making negative pulse constitute the action-potential generation part to generate output action-potential. Connecting output potential to the synaptic device, we implement the spike-timing-dependent-plasticity (STOP) mechanism, adjusting the conductance of synapse. As we have constituted the analog neuron circuit using 4-terminal synaptic device without additional switch and logic operation, we can emulate the operation of the neuron with minimum number of devices and power dissipation.</P>