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Solid-state-ligand-exchange free quantum dot ink-based solar cells with an efficiency of 10.9%
Aqoma, Havid,Jang, Sung-Yeon The Royal Society of Chemistry 2018 Energy & environmental science Vol.11 No.6
<P>While colloidal quantum dot based solar cells (CQDSCs) have recently achieved power conversion efficiencies (PCE) up to 11.3%, the CQD active layers are fabricated almost exclusively by a combined process of <I>in situ</I> solid-state ligand exchange (SSE) with multiple layer-by-layer (LbL) deposition, which has been a major obstacle to high-throughput processing. In this work, we developed, for the first time, high-efficiency CQDSCs without using either the SSE or LbL technique. The fabrication of n-p quantum dot junctions by SSE-free direct coating was achieved using n-type CQD ink and p-type CQD ink. The ink based devices achieved a PCE of ∼11%, which is comparable to the current state-of-the-art performance. The CQD inks enabled, for the first time, use of the doctor-blade coating method for device fabrication. Notably, the PCE of the bladed CQDSCs was remarkably high, at @@>@@10%, which suggests its potential use in other industrially friendly processes.</P>
Dasom Park,Aqoma, Havid,Ilhwan Ryu,Sanggyu Yim,Sung-Yeon Jang IEEE 2016 IEEE journal of selected topics in quantum electro Vol.22 No.1
<P>Colloidal quantum-dot-based photovoltaic devices (CQDPVs) were fabricated at room temperature in air atmosphere via a spraying technique. Lead sulfide colloidal quantum dots (CQDs) were utilized for this process and various fabrication conditions such as the spraying pressure, types of ligand molecules, duration of ligand exchange, and the band-gap of the CQDs were investigated in order to optimize the device performance. The power conversion efficiency reached 4.00% (V-OC of 0.57V, J(SC) of 11.79 mA center dot cm(-2), and FF of 0.60) when similar to 145 nm thick sprayed CQD layers were utilized; this value is comparable to that achieved with the conventional spin-coated devices. The generality of the conditions used for fabrication of the sprayed CQDPVs was demonstrated in the fabrication of various CQDs having different band-gaps (1.34-1.61 eV). This technique provides an avenue for the application of a high-throughput process for CQDPV fabrication. Because the materials used herein for device fabrication are not completely optimized, there is further scope for improving device performance.</P>