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Thermal Stability and Adhesion Improvement of Cu(Ag)/Mo Bilayer Metallization in Large-Area TFT-LCDs
H. M. Lee,J. G. Lee,C. H. Kang,C. O. Jeong,D. H. Kim,H. Ruh,J. H. Lee,J. H. Lee,S. Kim,S. K. Lim,S. Y. Kim,T. K. Hong 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.III
The addition of 1.4 at.% Ag to Cu thin films strongly influences the grain growth, stress relaxation, surface morphology, and adhesion to Mo glue layer. Annealing of the Cu(Ag)/Mo structures produced two distinct sets of microstructural changes occurring in temperature regimes between room temperature and 300 C, and 300 . 600 C. In the low temperature regime, Ag precipitates have a considerable effect in retarding the grain growth. At temperatures greater than 300 C, grain growth of Cu coincides with the coarsening of Ag particles and the outdiffusion of Ag to the Cu surface. The addition of Ag to Cu thin films also significantly enhanced thermal stability as a result of Ag precipitation along the grain boundaries and improved the adhesion strength of Cu(Ag) alloy to Mo, possibly due to the interfacial segregation of Ag. In addition, Cu(Ag)/Mo showed low resistivity of 2.3 . 1.9 μ -cm, depending on the annealing temperature. Since the Cu(Ag)/Mo structure shows excellent thermal stability and high adhesion properties with low resistivity, it can be used for interconnections in large-size TFT-LCDs.
Gallium nitride nanoparticle synthesis using nonthermal plasma with gallium vapor
K.H. You,J.H. Kim,S.J. You,H.C. Lee,H. Ruh,D.J. Seong 한국물리학회 2018 Current Applied Physics Vol.18 No.12
Gallium nitride (GaN) nanoparticles are synthesized by the gallium particle trapping effect in a N2 nonthermal plasma with metallic Ga vapor. A proposed method has an advantage of synthesized GaN nanoparticle purity because the gallium vapor from the inductively heated tungsten boat does not contain any impurity source. The synthesized particle size can be controlled by the amount of Ga vapor, which is adjusted using the plasma emission ratio of nitrogen to gallium, owing to the particle trapping effect. The synthesized nanoparticles are investigated by electron microscopy studies. High-resolution transmission electron microscopy (HRTEM) studies confirm that the synthesized GaN nanoparticles (10–40 nm) crystallize in a single-phase wurtzite structure. Room-temperature photoluminescence (PL) measurements indicate the band-edge emission of GaN at around 378 nm without yellow emission, which implies that the synthesized GaN nanoparticles have high crystallinity.
Kim, Y. H.,Ruh, H.,Noh, Y. K.,Kim, M. D.,Oh, J. E. American Institute of Physics 2010 JOURNAL OF APPLIED PHYSICS - Vol.107 No.6
<P>The microstructural properties of a GaN layer grown on a patterned sapphire substrate (PSS) were studied in detail using transmission electron microscope techniques to determine dislocation and growth behaviors. Regular and uniform recrystallized GaN islands were observed on the protruding pattern. On a flat sapphire surface, the crystallographic orientation relationship of <(1) over bar2 (1) over bar0 >(GaN) (on) (FS)//< 1 (1) over bar 00 >(sapphire) and {1<(1over bar>01}(GaN) (on) (FS)//{1 (2) over bar 13}(sapphire) existed between the GaN and the substrate. On the other hand, the orientation relationship of <(1) over bar2 (1) over bar0 >(GaN) (layer)//<(1) over bar2 (1) over bar0 >(GaN) (island) (on IS)//< 1 (1) over bar 00 >(sapphire) and {1 (1) over bar 01}(GaN) (layer)//{0002}(GaN) (island) (on) (IS)//{1 (2) over bar 13}(sapphire) was confirmed among the GaN layer, the recrystallized GaN islands on an inclined sapphire surface and the PSS. The flat surface among the protruding patterns began to fill rapidly with GaN. Then, the GaN gradually overgrew the protruding pattern and coalesced near the summit as the growth time increased. The generation of threading dislocations was observed in the vicinity of the coalescence points near the top of the protruding patterns. (C) 2010 American Institute of Physics.[doi:10.1063/1.3327004]</P>
Effects of an Al interlayer on the formation of Pt film on TiO<sub>2</sub>/Pt/Si structures
Rahman, M.A.,Kim, A.,Lee, C.,Han, J.,Soh, H.,Nam, H.s.,Ruh, H.,Lee, J. Elsevier 2011 Current Applied Physics Vol.11 No.4
We optimized the Al interlayer that was deposited by CVD on UV-exposed TiO<SUB>2</SUB> surfaces and investigated the effect of the Al interlayer on CVD of Pt. TiO<SUB>2</SUB> surfaces irradiated with UV-exposure increased the concentration of hydroxyl groups, which allowed for uniform nucleation and enhanced growth of the Al interlayer. The Al coated TiO<SUB>2</SUB> influenced the CVD of Pt, enhancing the growth rate and the inter-connectivity on Al/TiO<SUB>2</SUB> surfaces. X-ray diffraction patterns revealed the degree of crystallinity of the Al interlayer on UV-exposed TiO<SUB>2</SUB> surfaces and the Pt deposited on Al/UV-exposed TiO<SUB>2</SUB>. In addition, a tape test showed enhanced adhesion properties of Pt due to the direct chemical bond formation of Pt and the Al interlayer.