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MOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design
Miura-Mattausch, M.,Mattausch, H.J.,Ohguro, T.,Iizuka, T.,Taguchi, M.,Kumashiro, S.,Miyamoto, S. The Institute of Electronics and Information Engin 2004 Journal of semiconductor technology and science Vol.4 No.3
The origin of the phenomena, obstructing circuit performance in the RF operating regime, as well as their modeling will be discussed. The applied surface-potential-based modeling allows self-consistent description of all phenomena important for accurate circuit simulation, as demonstrated with the MOSFET model HiSIM.
MOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design
M. Miura-Mattausch,H. J. Mattausch,T. Ohguro,T. Iizuka,M. Taguchi,S. Kumashiro,S. Miyamoto 대한전자공학회 2004 Journal of semiconductor technology and science Vol.4 No.3
The origin of the phenomena, obstructing circuit performance in the RF operating regime, as well as their modeling will be discussed. The applied surface-potential-based modeling allows self-consistent description of all phenomena important for accurate circuit simulation, as demonstrated with the MOSFET model HiSIM.<br/>