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고전 상캬와 요가철학의 쁘라끄리띠 전변과 회귀 과정 고찰
심재구(Jae-Gu Shim) 원광대학교 동양학대학원 2020 동양학연구 Vol.16 No.-
고전 상캬철학의 경전인 『상캬까리까(sāṃkhyakārika)』에 따르면 순수자아인 뿌루샤(puruṣa)와 물질의 원질상태인 물라쁘라끄리띠(mūlaprakṛti)가 궁극의 존재로 나타난다. 이 둘의 결합은 무형의 물질이 전변되어 의식이 분화되고 유형의 물질로 창조되는 과정이다. 물질의 원질상태에서 세 가지 물질 속성, 즉 구나(guṇa)의 작용으로 물질이 분화되어가는 과정을 이해함으로써 고통의 원인이 파악된다. 이 고통의 원인을 해소하기 위해 요가학파의 경전인 『요가수뜨라(yogasūtra)』는 다양한 실천적 수행법을 제시한다. 『요가수뜨라』에서는 구나의 정화를 통해, 마음이라고 하는 찟따(citta)의 작용을 멈추는 방법을 설명하고 있다. 다시 이 찟따의 멈춤은 구나의 작용을 멈춘다. 구나작용의 멈춤으로 분별지(vivekakhyāti)를 획득함으로써 쁘라끄리띠로(prakṛti)의 회귀 즉 해탈에 이를 수 있다. 아울러 뿌루샤는 순수자아의 상태인 독존(kaivalya)을 성취 한다. 고전의 경전에서 언급한 고통의 원인과 그것의 고통소멸 과정인 “쁘라끄리띠의 회귀”를 밝힘으로써 현대인들이 겪고 있는 정신적인 고통의 원인을 이해하고 아울러 자신의 정체성을 회복하여 주체적인 삶을 영위할 수 있도록 한다. According to the Sāṃkhyakārika, the scriptures of the classical Sāṃkhya philosophy, the pure Self (puruṣa) and the original state of substance (Mūlaprakṛti) appear to be the ultimate being. The combination of these two is the process in which an intangible substance is transformed, consciousness is differentiated and created as a type of tangible substance. The cause of pain is identified by understanding the transformative process of the three material attributes, or Guṇa, in the substance's original state. To address this cause of suffering, Yogasūtra, the scripture of the Yoga school, suggests a variety of practical practices. It explains how to stop the action of Citta through the purification of Guṇa. Stopping of this Citta stops the operation of the guṇas. Stopping the operation of the guṇas and acquiring the power to discern (vivekakhyāti) can lead to the ‘regression of prakṛti’, or ‘Nirvana’. At the same time, Puruṣa achieves the state of the pure self, or Kaivaliya. Illuminating the causes of suffering and the process of eliminating suffering, known as ‘the Regression of Prakṛti’, mentioned in the classic scripture will help us understand the causes of mental suffering that modern people are going through and restore their identity so that they can lead their own lives.
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Yves Guéron(Yves Guéron ) 서울대학교 경제연구소 2023 經濟論集 Vol.62 No.1
This paper offers a survey of the recent literature related to the economics of data. In particular, we look at how data can confer market power and facilitate collusion, and consider some of the privacy implications of data ownership.
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Effect of Welding Time on Resistance Spot Weldability of Aluminum 5052 Alloy
Gu‑Cheol Kim,Insung Hwang,Munjin Kang,Dongcheol Kim,Hyunsung Park,김영민 대한금속·재료학회 2019 METALS AND MATERIALS International Vol.25 No.1
In the study, the effect of welding time on resistance spot weldability of aluminum 5052-H32 alloy was analyzed throughsimulation and experiments. The resistance spot weldability was evaluated by measuring the tensile shear strength, nuggetsize, and hardness of welds with variations in the welding time. The simulated results of parameters such as tensile shearstrength and nugget size obtained using the SORPAS program were compared with the experimental results. Furthermore,a simulation was performed to calculate the temperature inside the weld nugget based on the distance from the center of thenugget. Hence, an optimum welding time to retain the required weld strength of the aluminum 5052-H32 alloy was obtained.
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Redox-Dependent Spatially Resolved Electrochemistry at Graphene and Graphite Step Edges
Gü,ell, Aleix G.,Cuharuc, Anatolii S.,Kim, Yang-Rae,Zhang, Guohui,Tan, Sze-yin,Ebejer, Neil,Unwin, Patrick R. American Chemical Society 2015 ACS NANO Vol.9 No.4
<P>The electrochemical (EC) behavior of mechanically exfoliated graphene and highly oriented pyrolytic graphite (HOPG) is studied at high spatial resolution in aqueous solutions using Ru(NH<SUB>3</SUB>)<SUB>6</SUB><SUP>3+/2+</SUP> as a redox probe whose standard potential sits close to the intrinsic Fermi level of graphene and graphite. When scanning electrochemical cell microscopy (SECCM) data are coupled with that from complementary techniques (AFM, micro-Raman) applied to the same sample area, different time-dependent EC activity between the basal planes and step edges is revealed. In contrast, other redox couples (ferrocene derivatives) whose potential is further removed from the intrinsic Fermi level of graphene and graphite show uniform and high activity (close to diffusion-control). Macroscopic voltammetric measurements in different environments reveal that the time-dependent behavior after HOPG cleavage, peculiar to Ru(NH<SUB>3</SUB>)<SUB>6</SUB><SUP>3+/2+</SUP>, is not associated particularly with any surface contaminants but is reasonably attributed to the spontaneous delamination of the HOPG with time to create partially coupled graphene layers, further supported by conductive AFM measurements. This process has a major impact on the density of states of graphene and graphite edges, particularly at the intrinsic Fermi level to which Ru(NH<SUB>3</SUB>)<SUB>6</SUB><SUP>3+/2+</SUP> is most sensitive. Through the use of an improved voltammetric mode of SECCM, we produce movies of potential-resolved and spatially resolved HOPG activity, revealing how enhanced activity at step edges is a subtle effect for Ru(NH<SUB>3</SUB>)<SUB>6</SUB><SUP>3+/2+</SUP>. These latter studies allow us to propose a microscopic model to interpret the EC response of graphene (basal plane and edges) and aged HOPG considering the nontrivial electronic band structure.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2015/ancac3.2015.9.issue-4/acsnano.5b00550/production/images/medium/nn-2015-00550c_0009.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nn5b00550'>ACS Electronic Supporting Info</A></P>
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Layer-by-Layer Doping of Few-Layer Graphene Film
Gü,neş,, Fethullah,Shin, Hyeon-Jin,Biswas, Chandan,Han, Gang Hee,Kim, Eun Sung,Chae, Seung Jin,Choi, Jae-Young,Lee, Young Hee American Chemical Society 2010 ACS NANO Vol.4 No.8
<P>We propose a new method of layer-by-layer (LbL) doping of thin graphene films. Large area monolayer graphene was synthesized on Cu foil by using the chemical vapor deposition method. Each layer was transferred on a polyethylene terephthalate substrate followed by a salt-solution casting, where the whole process was repeated several times to get LbL-doped thin layers. With this method, sheet resistance was significantly decreased up to ∼80% with little sacrifice in transmittance. Unlike samples fabricated by topmost layer doping, our sample shows better environmental stability due to the presence of dominant neutral Au atoms on the surface which was confirmed by angle-resolved X-ray photoelectron spectroscopy. The sheet resistance of the LbL-doped four-layer graphene (11 × 11 cm<SUP>2</SUP>) was 54 Ω/sq at 85% transmittance, which meets the technical target for industrial applications.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2010/ancac3.2010.4.issue-8/nn1008808/production/images/medium/nn-2010-008808_0006.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nn1008808'>ACS Electronic Supporting Info</A></P>
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