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Kwon, Seong Jung,Zhou, Hongjun,Fan, Fu-Ren F.,Vorobyev, Vasily,Zhang, Bo,Bard, Allen J. Royal Society of Chemistry 2011 Physical chemistry chemical physics Vol.13 No.12
<P>Collisions of several kinds of metal or metal oxide single nanoparticles (NPs) with a less catalytic electrode surface have been observed through amplification of the current by electrocatalysis. Two general types of current response, a current staircase or a current blip (or spike) are seen with particle collisions. The current responses were caused by random individual events as a function of time rather than the usual continuous current caused by an ensemble of a large number of events. The treatment of stochastic electrochemistry like single NP collisions is different from the usual model for ensemble-based electrochemical behaviour. Models for the observed responses are discussed, including simulations, and the frequency of the steps or blips investigated for several systems experimentally.</P> <P>Graphic Abstract</P><P>Electrochemical measurements of single nanoparticle collisions at an electrode correlate with random walk simulations. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c0cp02543g'> </P>
Applications of Scanning Electrochemical Microscopy
Bard, Allen J.,Fan, Fu-Ren F. The Korean Society of Analytical Sciences 1995 분석과학 Vol.8 No.4
The application of scanning electrochemical microscopy to the imaging of surfaces in water and air and to the study of the electrochemistry of single molecules is discussed.
CHARGE TRANSPORT THROUGH CARBON NANOTUBE OR FULLERENE–MOLECULE–SILICON JUNCTIONS
FU-REN F. FAN,BO CHEN,AUSTEN K. FLATT,JAMES M. TOUR,ALLEN J. BARD 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2007 NANO Vol.2 No.5
We report here the current–voltage (i–V) characteristics of several (n++-Si/MNOPE/C60/Pt-tip) or (n++-Si/MNOPE/SWCNT/Pt-tip) junctions, where MNOPE = 2'-mononitro-4, 4'-bis(phenylethynyl)-1-phenylenediazonium and SWCNT = single wall carbon nanotube. A layer of C60 or SWCNT-derivatized MNOPE has strong effect on the i–V behavior of the junctions, including rectification, negative differential resistance (NDR) and switching behaviors. The i–V curve of a grafted molecular monolayer (GMM) of MNOPE atop n++-Si shows NDR behavior, whereas those of C60- and SWCNT-derivatized GMMs of MNOPE on n++-Si show strong rectifying behavior with opposite rectification polarities. With C60, larger currents were found with negative tip bias, while with SWCNT, the forward top bias was positive. Because C60 tends to be a good electron acceptor and SWCNTs tend to be good electron donors, they show different i–V behavior, as observed. Some of the (n++-Si/MNOPE/SWCNT/Pt-tip) junctions also show reversible bistable switching behavior.