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Growth of epitaxial C54 TiSi₂on Si(111) substrate by in situ annealing in ultrahigh vacuum
Koh, Jeoung Dae,Choi, Chi Kyu,Lee, Jeoung Ju,Kim, Kun Ho,Hong, Sung Rak,Seo, Dong Ju,Lee, Jeong Yong,Kim, Sung Chul,Nicolet, Marc A. 동의대학교 기초과학연구소 1993 基礎科學硏究論文集 Vol.3 No.1
The growth of Ti and the formation of epitaxial Ti silicide on Si(111)-7×7 were investigated by using reflection high-energy electron diffraction (RHEED) and high-resolution transmission electron microscopy (HRTEM). The growth mode of Ti is Stransky-Krastanov type when the substrate temperature is room temperature (RT). On the other hand, it is Volmer-Weber type when the substrate temperature is ∼550℃. The HRTEM lattice image and transmission electron diffraction pattern show that C54 TiSi₂ is grown epitaxially on a Si substrate when 160 ML of Ti is deposited on a Si(111)-7×7 surface at RT followed by in situ annealing at 750℃ for 10 min in ultrahigh vacuum (UHV). The TiSi₂crystallites are single crystal with matching face relationships of TiSi₂(111)∥Si(111), TiSi₂(311)∥Si(111), and TiSi₂(022)∥Si(111). A thin single-crystal Si overlayer with [111] direction is grown on the TiSi₂surface when TiSi₂/Si(111) is annealed at ∼900℃ in UHV, which is confirmed by observing the Si(111)-7×7 RHEED pattern.
The Study of High Brightness Prism Patterned LGP using Optical Simulation Analysis
Ok, Chul-Ho,Han, Jeong-Min,Hwang, Jeoung-Yeon,Seo, Dae-Shik The Korean Institute of Electrical and Electronic 2007 Transactions on Electrical and Electronic Material Vol.8 No.4
We have designed high performance prism light-guide plate (LGP) in 17 inch TFT-LCD. In test result to embody high brightness BLU in case of LGP of base and upper surface with 17 inch, thickness 8 mm adding prism construct, it is superior brightness improvement than previous that of printing form about some 20% and in this course to embody actual material it succeeded prism LGP production by 17 inch injection form process.
Han, Jeong-Min,Ok, Chul-Ho,Hwang, Jeoung-Yeon,Seo, Dae-Shik The Korean Institute of Electrical and Electronic 2007 Transactions on Electrical and Electronic Material Vol.8 No.4
In applying LCD to TV application, one of the most significant factors to be improved is image sticking on the moving picture. LCD is different from CRT in the sense that it's continuous passive device, which holds images in entire frame period, while impulse type device generate image in very short time. To reduce image sticking problem related to hold type display mode, we made an experiment to drive TN-LCD like CRT. We made articulate images by turn on-off backlight, and we realized the ratio of Back Light on-off time by counting between on time and off time for video signal input during 1 frame (16.7 ms). Conventional CCFL (cold cathode fluorescent lamp) cannot follow fast on-off speed, so we evaluated new fluorescent substances of light source to improve residual light characteristic of CCFL. We realized articulate image generation similar to CRT by CCFL blinking drive and TN-LCD overdriving. As a result, reduced image sticking phenomenon was validated by naked eye and response time measurement.
Growth of epitaxial C54 TiSi_2 on Si(111) substrate by in situ annealing in ultrahigh vacuum
Kim, Kun Ho,Lee, Jeoung Ju,Seo, Dong Ju,Choi, Chi Kyu,Hong, Sung Rak,Koh, Jeoung Dae,Kim, Sung Chul,Lee, Jeong Yong,Nicolet, Marc A. 慶尙大學校 기초과학연구소 1992 基礎科學硏究所報 Vol.8 No.-
The growth of Ti and the formation fo epitaxial Ti silicide on Si(111)-7×7 were investigated by using reflection high-energy electron diffraction (RHEED) and high-resolution transmission electron microscopy (HRTEM). The growth mode of Ti is Stransky-Krastanov type when the substrate temperature is room temperature (RT). On the other hand, it is Volmer-Weber type when the substrate temperature is ∼550℃. The HRTEM lattice image and transmission electron diffraction pattern show that C54 TiSi_2 is grown epitaxially on a Si substrate when 160ML of Ti is deposited on a Si(111)-7×7 surface at RT followed by in situ annealing at 750℃ for 10min in ultrahigh vacuum (UHV). The TiSi_2/Si interface is somewhat incoherent, but the developed TiSi_2 crystallites are single crystal with matching face relationships of TiSi_2(111)∥Si(111), TiSi_2(311)∥Si(111), and TiSi_2(022)∥Si(111). A thin single-crystal Si overlayer with[111] direction is grown on the TiSi_2 surface when TiSi_2/Si(111) is annealed at ∼900℃ in UHV, which is confirmed by observing the Si(111)-7×7 RHEED pattern.
A Study on Electro-optical Characteristics of the UV Aligned FFS Cell on the Organic Layer
Han, Jeong-Min,Ok, Chul-Ho,Hwang, Jeoung-Yeon,Kim, Byoung-Yong,Kang, Dong-Hun,Kim, Jong-Hwan,Kim, Young-Hwan,Han, Jin-Woo,Lee, Sang-Keuk,Seo, Dae-Shik The Korean Institute of Electrical and Electronic 2007 Transactions on Electrical and Electronic Material Vol.8 No.3
In this study, we investigated the electro-optical (EO) characteristic of fringe-field switching (FFS) mode cell by the two kinds of ultraviolet (UV) alignment method on the organic thin film (polyimide: PI). The suitable organic layers for FFS cell and the aligning capabilities of nematic liquid crystal (NLC) using the in-situ photoalignment method were studied; Disclination is observed after conventional photoalignment method for 1h, and in-situ photoalignment method for 1h. Monodomain alignment of the NLC can be observed via insitu photo alignment method for 2 h and 3 h. It is considered that NLC alignment is due to photo-depolymerization of the polymer with oblique non-polarized UV irradiation on PI surface. An unstable V-T curve of UV-aligned FFS-LCD with conventional photoalignment method can be achieved. However, a stable V-T curve of UV-aligned FFS-LCD with in-situ photoalignment method (1 h), and V-T curve of UV-aligned FFS-LCD with in-situ photo alignment method was much stable comparing with that of other UV-aligned FFSLCD's. As a result, more stable EO performance of UV-aligned FFS-LCD with in-situ photoalignment method for 3h is obtained than that of the other UV-aligned FFS-LCD's.
HSP25 inhibits radiation-induced apoptosis through reduction of PKCδ-mediated ROS production
Lee, Yoon-Jin,Lee, Dae-Hoon,Cho, Chul-Koo,Chung, Hee-Yong,Bae, Sangwoo,Jhon, Gil-Ja,Soh, Jae-Won,Jeoung, Doo-Il,Lee, Su-Jae,Lee, Yun-Sil Nature Publishing Group 2005 Oncogene Vol.24 No.23
Since radiation-induced caspase-dependent apoptosis and ROS generation were partially prevented by HSP25 overexpression, similar to the treatment of control cells with antioxidant agents such as DPI and tiron, questions arise whether radiation-mediated ROS generation contributes to the apoptotic cell death, and also whether HSP25 overexpression can reduce ROS mediated apoptotic cell death. In the present study, radiation-induced cytochrome c release from mitochondria and activation of caspases accompanied by a decrease of mitochondrial membrane potential in Jurkat T cells were shown to be inhibited by mitochondrial complex I inhibitor rotenone, suggesting that mitochondrial ROS might be important in radiation-induced caspase-dependent apoptosis. When HSP25 was overexpressed, effects similar to the treatment of cells with the antioxidants were obtained, indicating that HSP25 suppressed radiation-induced mitochondrial alteration that resulted in apoptosis. Furthermore, activation of p38 MAP kinase by radiation was associated with radiation-induced cell death and ROS production and PKCδ was an upstream molecule for p38 MAP kinase activation, ROS generation and subsequent caspase-dependent apoptotic events. However, in the HSP25 overexpressed cells, the above-described effects were blocked. In fact, radiation-induced membrane translocation of PKCδ and tyrosine phosphorylation were inhibited by HSP25. Based on the above data, we suggest that HSP25 downregulates PKCδ, which is a key molecule for radiation-induced ROS generation and mitochondrial-mediated caspase-dependent apoptotic events.Oncogene (2005) 24, 3715–3725. doi:10.1038/sj.onc.1208440 Published online 4 April 2005
알칼로이드 진통제 DK 1001 의 opioid 수용체 선택성 및 일반약리
김진숙(Jin Sook Kim),김대경(Dae Kyung Kim),권태협(Tae Hyub Kwon),용철순(Chul Soon Yong),하정희(Jeoung Hee Ha),허근(Keun Huh),김정애(Jung Ae Kim) 한국응용약물학회 1999 Biomolecules & Therapeutics(구 응용약물학회지) Vol.7 No.3
DK1001 is a thebain derivative, which is newly synthesized as an alkaloid analgesic. This study was designed to study effects of DK1001 on the ligands binding to the opioid receptor subtypes, and general pharmacology of DK1001. DK1001 inhibited the binding of [^3H]DAMGO, a selective mu-subtype agonist, to the opioid receptor of rat forebrain in a concentration-dependent manner. EC_(50) of DK1001 was significantly lower than that of morphine. DK1001 inhibited the binding of [^3H]DPDPE, a selective delta-subtype agonist concentration-dependently. DK1001(0.5 mg/kg) had no effects on behavior, body temperature, blood pressure, respiratory rate, and intestinal charcoal propulsion of mice. In addition, DK1001 did not affect on the contractilities of isolated muscle strips of aorta, ileum, and trachea of rats. These results suggest that DK1001 might be a potent analgesic without serious side effects.