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시뮬레이션에 의한 금속게이트 FD-SOI 와 MuGFET의 불소 이온 주입효과
이치우(Chi-Woo Lee),D. Lederer,A. Afzalian,Ran Yan,J.P. Colinge 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.7
Fluorine (F) implantation creates negative charges at the Si/SiO₂ interface in FDSOI transistors[1]. This paper describes simulation of the influence of F Implant on Threshold Voltage(Vth) for Metal Gate FDSOI and MuGFETs using FEMLAB<SUP>ⓡ</SUP> The origin of the large V th shift observed in planar FDSOI due to is the creation of negative charge states in the BOX by the F implant. F implant is a suitable approach for planar FDSOI SoC integration with single work function (WF) metal gate, but NOT for MuGFETs.
Light Emission from Silicon Nanocrystals - Size Does Matter !
Robert G. Elliman,Andrew R. Wilkinson,Barry Luther-Davies,Marc G. Spooner,Marek Samoc,Max J. Lederer,Nathanael Smith,Tessica D.M. Weijers 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
A brief overview of two recent Si nanocrystal studies undertaken at the Australian National University is presented: recent work on hydrogen passivation of non-radiative defects and attempts to measure optical gain in waveguide structures. In the rst study, a generalized treatment of hydrogen passivation and desorption is employed to model the in uence of hydrogen on silicon nanocrystal luminescence. Values for reaction-rate parameters are determined from the model and found to be in excellent agreement with values previously determined for paramagnetic Si danglingbond defects (Pb-type centers) found at planar Si/SiO2 interfaces. In the second study, an attempt is made to measure optical gain in silicon nanocrystals by monitoring the intensity of a probe beam propagating in a waveguide structure containing silicon nanocrystals during photo-excitation of the nanocrystals. The probe beam is shown to be attenuated by the excitation demonstrating the dominance of absorptive processes. No gain was observed.