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- 저자 : Chaigneau, Marc (검색결과 2 건)
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Direct Synthesis and Integration of Individual, Diameter-Controlled Single-Walled Nanotubes (SWNTs)
Bouanis, Fatima Z.,Cojocaru, Costel S.,Huc, Vincent,Norman, Evgeny,Chaigneau, Marc,Maurice, Jean-Luc,Mallah, Talal,Pribat, Didier American Chemical Society 2014 Chemistry of materials Vol.26 No.17
<P>We present a robust and versatile approach for the reproducible and controllable growth of single-walled carbon nanotubes (SWNTs) through a self-assembled monolayer (SAM) technique coupled with an atomic hydrogen (H<SUB>at</SUB>) pretreatment to control the catalytic metallic nanoparticles size and density. The nanoparticles are obtained from a self-assembled monolayer of metal complexes or salts on a SiO<SUB>2</SUB> substrate using a two-step strategy. The oxide is first functionalized by silanization with a coordinating ligand leading to the formation of an anchoring SAM on the substrate. Then, metallic complexes such as ruthenium porphyrin (RuTPP) or metallic salts (FeCl<SUB>3</SUB>, RuCl<SUB>3</SUB>) are assembled by coordination bonds on the preformed organic SAM. Pyrolysis under radical hydrogen atmosphere of the as-prepared SAM yields metallic nanoparticles whose size and density are controlled and tuned. Using the as-formed nanoparticles as catalysts, SWNTs are grown by double hot-filament-assisted chemical vapor deposition (d-HFCVD). They exhibit a remarkably good crystalline quality, with a diameter (and type) strongly dependent on the nature of the initial catalyst precursor and its preparation. Field-effect transistors (FETs) with excellent characteristics were obtained using such in-place grown SWNTs. The electronic properties of the SWNTs can be tuned: the transistors obtained from Ru(TPP) and FeCl<SUB>3</SUB> exhibit <I>I</I><SUB>ON</SUB>/<I>I</I><SUB>OFF</SUB> current ratio up to ∼10<SUP>9</SUP>, indicative of the direct growth of a high proportion of semiconducting nanotubes over than 98%. Such elevated <I>I</I><SUB>ON</SUB>/<I>I</I><SUB>OFF</SUB> values have been reported essentially for CNT-FETs devices based on individual semiconducting SWNTs, so far. By contrast, devices obtained from the RuCl<SUB>3</SUB> salt display <I>I</I><SUB>ON</SUB>/<I>I</I><SUB>OFF</SUB> current ratio well below 10<SUP>2</SUP>, indicating the direct growth of SWNTs highly enriched in metallic specimens.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/cmatex/2014/cmatex.2014.26.issue-17/cm502282x/production/images/medium/cm-2014-02282x_0007.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/cm502282x'>ACS Electronic Supporting Info</A></P>
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