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Development of FPGA-based system for control of an Unmanned Ground Vehicle with 5-DOF Robotic Arm
Abdullah Afaq,Mohammad Ahmed,Ahmed Kamal,Umar Masood,Muhammad Shahzaib,Nasir Rashid,Mohsin Tiwana,Javaid Iqbal,Asadullah Awan 제어로봇시스템학회 2015 제어로봇시스템학회 국제학술대회 논문집 Vol.2015 No.10
This paper discusses the development of a customizable FPGA based system for implementing control algorithms on an Unmanned Ground Vehicle (UGV) and its 5 Degree of Freedom (DOF) manipulator. The compact RIO-9012 is used as a controller which is a reconfigurable embedded control and acquisition system using LabVIEW as the programming platform. The developed system enables the control of UGV and its manipulator using a remote joystick controller via Wi-Fi communication. Apart from Joystick, the system can also be controlled optionally using a keyboard. Accuracy of Joystick control has been enhanced by using point to point mapping technique. A user friendly GUI has been developed to view live video feedback obtained from the onboard cameras to control the UGV accordingly. Different features of UGV like path tracker (tracks its path on Google Maps), variable speed modes, battery indicator, camera switch and selector etc. are also managed in the GUI. The system has been developed so that, in future, it can easily be extended to a fully autonomous system.
Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications
Nor Zaihar Yahaya,Mumtaj Begam Kassim Raethar,Mohammad Awan 전력전자학회 2009 JOURNAL OF POWER ELECTRONICS Vol.9 No.1
This paper presents a review of an improved high power-high frequency III-V wide bandgap (WBG) semiconductor device, Gallium Nitride (GaN). The device offers better efficiency and thermal management with higher switching frequency. By having higher blocking voltage, GaN can be used for high voltage applications. In addition, the weight and size of passive components on the printed circuit board can be reduced substantially when operating at high frequency. With proper management of thermal and gate drive design, the GaN power converter is expected to generate higher power density with lower stress compared to its counterparts, Silicon (Si) devices. The main contribution of this work is to provide additional information to young researchers in exploring new approaches based on the device’s capability and characteristics in applications using the GaN power converter design.
Nor Zaihar Yahaya,Mumtaj Begam Kassim Raethar,Mohammad Awan 전력전자학회 2009 JOURNAL OF POWER ELECTRONICS Vol.9 No.2
When converters operate in megahertz range, the passive components and magnetic devices generate high losses. However, the eddy current issues and choices of magnetic cores significantly affect on the design stage. Apart from that, the components’ reduction, miniaturization technique and frequency scaling are required as well as improvement in thermal capability, integration technique, circuit topologies and PCB layout optimization. In transformer design, the winding and core losses give great attention to the design stage. From simulation work, it is found that E-25066 material manufactured by AVX could be the most suitable core for high frequency transformer design. By employing planar geometry topology, the material can generate significant power loss savings of more than 67% compared to other materials studied in this work. Furthermore, young researchers can use this information to develop new approaches based on concepts, issues and methodology in the design of magnetic components for high frequency applications.
Review on Magnetic Components: Design & Consideration in VHF Circuit Applications
Yahaya, Nor Zaihar,Raethar, Mumtaj Begam Kassim,Awan, Mohammad The Korean Institute of Power Electronics 2009 JOURNAL OF POWER ELECTRONICS Vol.9 No.2
When converters operate in megahertz range, the passive components and magnetic devices generate high losses. However, the eddy current issues and choices of magnetic cores significantly affect on the design stage. Apart from that, the components' reduction, miniaturization technique and frequency scaling are required as well as improvement in thermal capability, integration technique, circuit topologies and PCB layout optimization. In transformer design, the winding and core losses give great attention to the design stage. From simulation work, it is found that E-25066 material manufactured by AVX could be the most suitable core for high frequency transformer design. By employing planar geometry topology, the material can generate significant power loss savings of more than 67% compared to other materials studied in this work. Furthermore, young researchers can use this information to develop new approaches based on concepts, issues and methodology in the design of magnetic components for high frequency applications.
Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications
Yahaya, Nor Zaihar,Raethar, Mumtaj Begam Kassim,Awan, Mohammad The Korean Institute of Power Electronics 2009 JOURNAL OF POWER ELECTRONICS Vol.9 No.1
This paper presents a review of an improved high power-high frequency III-V wide bandgap (WBG) semiconductor device, Gallium Nitride (GaN). The device offers better efficiency and thermal management with higher switching frequency. By having higher blocking voltage, GaN can be used for high voltage applications. In addition, the weight and size of passive components on the printed circuit board can be reduced substantially when operating at high frequency. With proper management of thermal and gate drive design, the GaN power converter is expected to generate higher power density with lower stress compared to its counterparts, Silicon (Si) devices. The main contribution of this work is to provide additional information to young researchers in exploring new approaches based on the device's capability and characteristics in applications using the GaN power converter design.