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김우식,정운수,조창래 한국화학공학회 1973 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.11 No.5
本硏究는 第2報로써 非定常狀態下에서의 回分蒸留工程의 있어서 Holdup ratio의 효과를 규명하려 한 것이다. 操作時間의 따른 Still pot內의 濃度變化를 蒸留速度로 定義하여 다음과 같은 理論式을 誘導했다. (수식) 試料는 Benzene-Carbontetrachloride와 Methanol-Ethanol 等의 二成分系를 使用했으며 實驗値와 比較검토 結果 上記 理論式과 잘 一致했다. 한편, Reflux ratio가 낮을 때는 Holdup ratio가 증가할수록 분리효과는 증가하였고, Reflux ratio가 높을 경우는 Holdup ratio가 증가할수록 분리효과는 감소했다. 따라서 다른 모든 變數를 일정하게 유지시켰을 때 Holdup ratio의 분리효과는 Reflux ratio의 의존함을 알았다. 또 Holdup ratio의 분리효과가 뚜렷이 나타나지 않았을 때의 Reflux ratio를 Critical Reflux ratio라 하였으며 本 硏究에서 Benzene-Carbontetrachloride의 Critical Reflux ratio는 9였고 Methanol-Ethanol系에서는 2였다. This study is concerned with the separation of binary mixtures in the fractional batch distillation under various conditions of Holdup to charge ratio at constant reflux ratio. The rate of separation is defined as the rate of change in the still composition with respect to the operating time elapsed. Under proper assumption a theoretical equation relating the still composition with the operating time was derived as; (수식) The equation was compared with experimental results obtained with two binary mixtures, i.e., Benzene-CTC(carbontetrachloride) and Methanol-Ethanol, in a Oldershaw-type batch distillation apparatus. Consequently the equation was found to be substantially agreed with the experimental results, especially for the Methanol-Ethanol system. For the benzene-CTC system the equation tended to agree with experimental results. Meanwhile, holdup ratio was found experimently to have two counteracting effects on the separation of binary mixtures. Namely, in a series of experimental works, as the reflux ratio was increased above the critical reflux ratio the effect of increased holdup ratio become increasingly unfavorable to sharpness of separation. At reflux ratio below the critical reflux ratio the effect of increasing holdup ratio was favorable. For the Benzene-CTC system (30 plates) the critical reflux ratio was 9, at the Methanol-Ethanol system was 2.
김우식,박민철 한국광학회 2015 Current Optics and Photonics Vol.19 No.6
In this paper, we consider a method for estimating a stripe-type defect and the reconstruction of adefect-free L/S type mask used in lithography. Comparing diffraction patterns of defected and defect-freemasks, we derive equations for the estimation of the location and size of the defect. We construct ananalytical model for this problem and derive closed form equations to determine the location and sizeusing phase retrieval problem solving techniques. Consequently, we develop an algorithm that determinesa defect-free mask pattern. An example shows the validity of the equations