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Transport Study of Lambda DNA Molecules
황종승,안도열,김형권,오정현,손맹호,Su Heon Hong,황성우 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.3
We fabricated lambda DNA nanowire interconnections between nanometer-scale electrodes and measured their electrical transport characteristics. By spraying a diluted solution of lambda DNA molecules, DNA interconnections were formed between parallel Ti/Au electrodes with a gap of 1 $\mu$m. These lambda DNA nanowires showed good electrical transport characteristics. The current-voltage characteristics exhibited conductance values ranging from 0.21 to 0.65 nG, which are consistent with previous reports. The results in this experiment provide evidence for the conducting properties of DNA molecules and provide possibilities of using DNA molecules as interconnecting materials in bio-nano electronic systems.
현도빈,황종승,오태성,유병철,황창원,Hyeon, Do-Bin,Hwang, Jong-Seung,O, Tae-Seong,Yu, Byeong-Cheol,Hwang, Chang-Won 한국재료학회 1998 한국재료학회지 Vol.8 No.5
Electrical and Thermoelectric Properties of$ SbI_{3}$-doped 85% 85% $BiTe_{2}$$Se_{3}$ 단결정에서 전하 이동에 대한 살란인자는 0.1이었으며, 전자이동도와 정공이동도의 비($\mu_{e}$ /$\mu_{h}$ )는 1.45이었다. $SbI_{3}$의 첨가량이 증가할수록 전자 농도의 증가로 Seebek 계수와 전기비저항이 감소하며, Seebeck 계수와 전기비저항이 최대값을 나타내는 온도가 고온으로 이동하였다. $SbI_{3}$를 첨가한 85%$Bi_{2}$$Te_{3}$단결정에서 성능지수의 최대값은 $SbI_{3}$를 0.1 wt%첨가한 조성에서 $2.0 x 10^{-3}$ K이었다.
Zone melting furnace 온도와 성장속도가 90 % Bi2Se3n 형 단결정의 열전특성에 미치는 영향
현도빈,황종승,심재동,오태성,하헌필 대한금속재료학회(대한금속학회) 2000 대한금속·재료학회지 Vol.38 No.1
The effects of the zone melting temperature and growth rate on the thermoelectric properties for 0.15 wt% CdI₂ and 0.05 wt% CdCl₂ doped 90% Bi₂Te₃-10% Bi₂Se₃ single crystals were investigated. The Seebeck coefficient and electrical resistivity of the 0.15 wt% CdI₂ doped single crystals were initially decreased along the ingots due to the condensation of iodine in the melts. The sharp increase of the Seebeck coefficient and electrical resistivity at the last-to-freeze region were considered as results of the evaporation of iodine from the molten zone and the compensation of electrons due to the formation of the antistructure defects. The figure-of-merit was enhanced with increasing the zone melting temperature and lowering the growth rate. The single crystels grown at the zone melting temperature of 800℃ and the growth rate of 0.1 ㎜/min exhibited the maximum figure-of-merit of 2.8×10^(-3)/K.
SbI3 를 첨가한 33.3 % Bi2Te3-66.7 % Sb2Te3 열전반도체의 전기적특성과 열전특성
현도빈,황종승,심재동,오태성,황창원 대한금속재료학회(대한금속학회) 1999 대한금속·재료학회지 Vol.37 No.2
The temperature dependences of the electrical and thermoelectric properties of the SbI₃-doped 33.3% Bi₂Te₃66.7% Sb₂Te₃ single crystals have been measured at temperatures ranging from 77K to 600K. The scattering parameter of the 33.3 Bi₂Te₃-66.7% Sb₂Te₃ single crystals was determined as s = 0. With increasing the amount of SbI₃ dopant, the hole concentration of the 33.3% Bi₂Te₃-66,7% Sb₂Te₃ single crystal is decreased, resulting in the increment of the Seebeck coefficient and electrical resistivity, and the temperature for the maximum figure-of-merit shifted to lower temperature. A maximum figure-of-merit of 2.3×10^(-3)/K was obtained for 0.3 wt% SbI₃-doped specimen. It has been revealed that. the addition of SbI₃ as a donor dopant is useful in controlling the hole concentration of p-type 33.3% Bi₂Te₃ 66.7% Sb₂Te₃ alloy system.
Sbi3 를 첨가한 25% Bi2Te3-75% Sb2Te3 와 15% Bi2Te3-85% Sb2Te3 단결정의 전기적특성과 열전특성
현도빈,황종승,심재동,오태성,하헌필 대한금속재료학회(대한금속학회) 1999 대한금속·재료학회지 Vol.37 No.8
The temperature dependences of the electrical and thermoelectric properties of the SbI₃-doped 25% Bi₂Te₃-75% Sb₂Te₃ and 15% Bi₂Te₃-85% Sb₂Te₃ single crystals, grown by the Bridgman method, were measured at temperatures ranging from 77 K to 600 K. For the Sb₂Te₃-rich single crystals, the temperature dependence of the Hall mobility was T^(-1.0) regardless the Sb₂Te₃ contents and added amount of SbI₃. The temperature dependences of (m*/m_o)^(3/2)·μ_c and effective mass m*/m_o were T^(-1.5) and T^(-1/3), respectively. The decrease of the saturated hole concentration and the change of the slope of the Seebeck coefficient with temperature were considered in the view point of the two sub-bands in the valence band. The maximum figure-of-merit at 300 K of 0.2 wt% SbI₃-doped 25% Bi₂Te₃-75% Sb₂Te₃ and 0.4 wt% SbI₃-doped 15% Bi₂Te₃-85% Sb₂Te₃ single crystals were 2.25×10^(-3)/K and 1.95×10^(-3)/K, respectively.
0.2wt% SbI3 첨가 90% Bi2Te3-(10-x)% Sb2Te3-x% Sb2Se3 고용체 합금의 전기적특성 및 열전특성
현도빈,황종승,심재동,오태성,Barabash, V . A . 대한금속재료학회(대한금속학회) 1998 대한금속·재료학회지 Vol.36 No.8
Electrical and thermoelectric properties of the 0.2 wt% SbI₃- doped n-type 90% Bi₂Te₃-(10-x)% Sb₂Te₃-x% Sb₂Se₃ single crystals have been investigated at temperatures ranging from 77K to 600K. The carrier concentration and Seebeck coefficient were independent of the Sb₂Se₃ content. With increasing the Sb₂Se₃ content, the electrical resistivity increased and Hall mobility decreased, which was attributed to the lattice distortion. The thermal conductivity decreased with increasing Sb₂Se₃ content, which was mainly due to the decrease of the electronic thermal conductivity. With increasing the Sb₂Se₃ content, the maximum figure-of-merit decreased and was shifted to the lower temperature. The 0.2 wt% SbI₃-doped 90% Bi₂Te₃-5% Sb₂Te₃-5% Sb₂Se₃ single crystal showed the maximum figure-of-merit of 1.65×10^(-3)/K at 280K.