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Structure and Property Analysis of Nanoporous Low Dielectric Constant SiCOH Thin Films
허규용,이문호,이시우,박영희 한국표면공학회 2009 한국표면공학회 학술발표회 초록집 Vol.2009 No.-
We have carried out quantitative structure and property analysis of the nanoporous structures of low dielectric constant (low-k) carbon-doped silicon oxide (SiCOH) films, which were deposited with plasma enhanced chemical vapor deposition (PECVD) using vinyltrimethylsilane (VTMS), divinyldimethylsilane (DVDMS), and tetravinylsilane (TVS) as precursor and oxygen as an oxidant gas. We found that the SiCOH film using VTMS only showed well defined spherical nanopores within the film after thermal annealing at 450 ℃ for 4 h. The average pore radius of the generated nanopores within VTMS SiCOH film was 1.21 ㎚ with narrow size distribution of 0.2. It was noted that thermally labile CxHy phase and Si-CH₃ was removed to make nanopore within the film by thermal annealing. Consequently, this induced that decrease of average electron density from 387 to 321 ㎚<SUP>-3</SUP> with increasing annealing temperature up to 450 ℃ and taking a longer annealing time up to 4 h. However, the other SiCOH films showed featureless scattering profiles irrespective of annealing conditions and the decreases of electron density were smaller than VTMS SiCOH film. Because, with more vinyl groups are introduced in original precursor molecule, films contain more organic phase with less volatile characteristic due to the crosslinking of vinyl groups. Collectively, the presenting findings show that the organosilane containing vinyl group was quite effective to deposit SiCOH/CxHy dual phase films, and post annealing has an important role on generation of pores with the SiCOH film.
Cr-free 화성처리를 이용한 AZ31 마그네슘 합금의 내식성 향상 연구
허규용,박영희,정재인,양지훈 한국표면공학회 2009 한국표면공학회 학술발표회 초록집 Vol.2009 No.10
AZ31 (3% Al, 1% Zn) Mg 판재의 내식성 향상을 위해 Ti/Zr/Polymer 복합계의 Cr-free 화성처리 방법을 이용하였다. 염수분무시험을 통해 최고 72시간 (5~10% 발청) 내식성이 나타남을 확인하였다. 화성피막의 내식성은 그 피막이 가진 성분, 균일도, 치밀도, 형상 및 두께에 의해 좌우되는 만큼 TEM, SEM을 통해 화성피막 구조가 내식성과 어떠한 관련이 있는지 조사하였다. 또한, 화성처리 전 단계 공정인 탈지와 산세 및 중화 공정의 변수 조절을 통해 전처리 공정이 최종 화성피막의 물성에 어떠한 영향을 미치는지 조사하였다. 탈지조건을 35~40℃, 5분에서 50~80℃, 10~20분으로 변경 시 좀 더 균일한 외관을 얻을 수 있었고, 적절한 중화제 선택을 통해 화성피막을 균일하게 형성시킬 수 있었다. 투과전자현미경 결과로 미루어 화성피막의 두께보다 균일도와 치밀도가 내식성에 결정적인 영향을 미치는 것을 확인할 수 있었다.
Thermal stability and reliability assessment of zirconium ALD precursor
허규용 한국공업화학회 2018 한국공업화학회 연구논문 초록집 Vol.2018 No.0
Organometallic precursors for atomic layer deposition (ALD) that have metal atoms bound to cyclopentadienyl, are stored at a sufficiently high temperature due to their low volatility and consumed through continuous deposition for a commercial semiconductor process. In this case, thermal degradation slowly occurs due to storage at a high temperature for a long time, which causes deterioration of physical properties and reliability of the thin film. However, a technique for assessing the reliability of precursor has been undeveloped and thus causing the development of new precursors to be delayed. In this study, we have developed a reliability evaluation method for cyclopean-tadienyl tris(dimethylamino) zirconium through accelerated thermal degradation test under severe environmental conditions in a short period of time.
Thermal stability and lifetime assessment of chemical deposition materials
허규용,정고운 한국공업화학회 2019 한국공업화학회 연구논문 초록집 Vol.2019 No.1
Vapor-deposition material needs high thermal stability and must be maintained the purity over long term use under high temperature. For example, organometallic precursors for atomic layer deposition (ALD) that have metal atoms bound to cyclopentadienyl, are kept at a sufficiently high temperature due to their low volatility. Thus, relatively weak organic ligands can be thermally decomposed and form impurities which can further accelerate degradation. Thermal degradation of organic materials used in vacuum thermal evaporation also slowly occurs due to continuous high temperature stress, which causes deterioration of physical properties and reliability of thin film. In this study, we have developed a technique to assess thermal stability and lifetime of vapor-deposition materials such as tris(dimethylamino) cyclopentadienyl zirconium, N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB) and 4,4'-bis(carbazol-9-yl)biphenyl (CBP) through accelerated thermal degradation test.