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한세교,조길원 한국고분자학회 2021 한국고분자학회 학술대회 연구논문 초록집 Vol.46 No.2
A fast-response photomultiplication-type organic photodiode (PM-OPD) is demonstrated. The PM-OPD uses a bulk heterojunction (BHJ) of donor and acceptor materials and a core-shell quantum dot (QD) interlayer. The PM-OPD shows large specific detectivity, external quantum efficiency (EQE), and bandwidth compared to other PM-OPDs showing large EQE-bandwidth product of 105 Hz which is an important figure-of merit of photodetectors. This performance is enabled by the novel device structure (ITO/ZnO/donor-acceptor BHJ/QD/Ag), where fast charge trapping dynamics of the QD interlayer results in fast response of the PM-OPD. In addition, the respons speed of the proposed device can be modulated by controlling charge trapping dynamics of the QDs. As a result, a fast-response of 109 kHz, which is the largest among the values reported, is obtained. This work offers new insights on device structure for high-performing PM-OPDs and provides comprehensive understanding of underlying device physics.
한세교,조길원 한국고분자학회 2021 한국고분자학회 학술대회 연구논문 초록집 Vol.46 No.1
We demonstrate a high performance photomultiplication-type organic photodetector (PM-OPD) based on a bulk heterojunction (BHJ) of donor and acceptor materials and a core-shell quantum dot (QD) interlayer. The PM-OPD shows high specific detectivity, external quantum efficiency (EQE), and fast response time compared to other PM-OPDs, resulting in large EQE-bandwidth product (~105 Hz). This notable performance is enabled by the novel device structure (ITO/ZnO/donor-acceptor BHJ/QD/Ag), where fast charge trapping of photo-generated electrons at the QD interlayer induced fast charge injection from the electrodes. This is distinguished from conventional PM-OPDs, which usually suffer from slow response time due to the relatively long charge accumulation time required for the charge injection from the electrodes. This work offers a new insight on the design of device structure for fast-response and high-performing PM-OPDs and provides comprehensive understanding of underlying device physics.