http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
VPE 법에 의한 GaAs Epilayer 의 성장조건에 관한 연구
최인훈,이승무,서상희,장태용,송원준 고려대학교 공학기술연구소 1993 고려대학교 생산기술연구소 생기연논문집 Vol.29 No.1
The growth of an epitaxial layer on a GaAs substrate was carried out by the system of Ga/AsCl₃/H₂. To establish optimum growth parameters, thermodynamic analysis was made first and the result was compared with the experimental one. Among many parameters, the mole fraction of AsCl₃ in H₂ and the flow rate of carrier gas were variable and the other parameters, such as source and seed temperature, temperature gradient, substrate orientation, reaction time and reactor pressure, were fixed during the experiment. A little difference was found between the growth rate analized by a simple thermodynamic model and that measured from the experiment. From the results, as a flow rate of carrier gas increased, the rate-determining step was changed from mass-input-limited step to kinetic-limited step. Surface morphologies were not affected by both the flow rate and the change of mole fraction.
냉간가공과 그후의 열처리가 GaAs 단결정의 Degradation 에 미치는 영향
최인훈,민석기,김철우 고려대학교 공학기술연구소 1984 고려대학교 생산기술연구소 생기연논문집 Vol.19 No.1
The effects of the cold working and subsequent heat treatment on the characteristics of GaAs single crystals were studied in this experiment. When the GaAs wafters with thickness of about 400㎛ were thinned to about 50㎛ by abrading one face with 10㎛ Al₂O₃ abrasive and sequentially annealed at 500℃ for 3 minutes under N₂ gas flow, the carrier concentrations measured at the opposite face were decreased from 5.8×10^(17)㎝^(-3) to 1.5×10^(17)㎝^(-3) and the breakdown voltages were increased to about 30%. Before annealing the abraded wafers, there was no increment in the dislocation density on the opposite face. After annealing the same wafter with 50㎛ under the above condition, the dislocation on the opposite face was increased from 7.4×10³ pits/㎠ to 1.7×10^5 pits/㎠. In a wafer with the dislocation density more than 2× 10⁴ pits/㎠, the carrier concentrations were lower and the breakdown voltages were higher in the position of the higher dislocation density. It is supposed that the degradation of the crystal was related to the generation of the dislocations during such treatments. The depth of damaged layer in the (111) face of GaAs wafers due to abrasion with 10㎛ Al₂O₃ abrasive was about 10㎛. There is little difference of the depth of damaged layer between before and after heat treatment.