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유도 결합 플라즈마를 이용한 TaN 박막의 건식 식각 특성
진려,주영희,우종창,김한수,최경록,김창일,Li, Chen,Joo, Young-Hee,Woo, Jong-Chang,Kim, Han-Soo,Choi, Kyung-Rok,Kim, Chang-Il 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.1
In this paper, we investigated the etching characteristics of the TaN thin films and the surface reaction of TaN thin films after etching process. The etching characteristics of the TaN thin films were carried out using inductively coupled plasma (ICP). The etch rate and the selectivity of TaN to $SiO_2$ and TaN to PR were measured by varying the gas mixing ratio, RF power, DC-bias voltage, and process pressure in CF-based plasma. The surface reaction of TaN thin films were determined by x-ray photoelectron spectroscopy (XPS).