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채근화(K.H. Chae),송종환(J.H. Song),정성문(S.M. Jung),장홍규(H.G. Jang),주장현(J.H. Joo),강석태(S.T. Kang),최범식(B.S. Choi),김상옥(S.O. Kim),황정남(C.N. Whang) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.1
이온선혼합의 열충격으로 야기되는 등방적 또는 이방적 원자이동을 정량적으로 묘사하기 위한 모형을 제시하였다. 불순물 확산에서 원자들의 이동비는 구성원자들의 활성화에너지에 의존한다. 이 모형은 0에 가까운 혼합열과 비교적 높은 활성화에너지를 가진 이중층들의 실험결과들을 만족스럽게 예견한다. 불순물 확산에서 구성원자들의 활성화에너지가 크게 차이가 나는 계들은 이방적 원자이동을 보여주는 반면, 비슷한 활성화에너지를 가지는 계들은 등방적 원자이동을 나타낸다. A simple model is presented to describe quantitative the isotropic and anisotropic atomic transport in thermal spike induced ion mixing. The ratio of atomic transport depends on the activation energies of constituents for the impurity diffusion. The model predicts fairly satisfactory the trend of experimental observations for the bilayer systems which have near zero heats of mixing and relatively high spike activation energies. The systems which have large difference in activation energies of constituents for the impurity diffusion show the anisotropic atomic transport, while the systems having similar activation energies for the impurity diffusion reveal the isotropic atomic transport.
이온 조사된 Cu / Ni / Cu(001) / Si 자성박막에 있어서 X-ray reflectivity를 이용한 계면 연구
김태곤(T. G. Kim),송종한(J. H. Song),이택휘(T. H. Lee),채근화(K. H. Chae),황현미(H. M. Hwang),전기영(G. Y. Jeon),이재용(J. Lee),정광호(K. Jeong),황정남(C. N. Whang),이준식(J. S. Lee),이기봉(K. B. Lee) 한국자기학회 2002 韓國磁氣學會誌 Vol.12 No.5
The Cu/Ni/Cu(002)/Si(100) films which have perpendicular magnetic anisotropy were deposited by e-beam evaporation methods. From the reflection high energy electron diffraction pattern, the films were confirmed to be grown epitaxially on silicon. After 2×10^(16) ions/㎠ C+ irradiation, magnetic easy-axis was changed from surface normal to in-plane as shown in the hysteresis loop of magneto-optical Kerr effects. It became manifest from analysis of X-ray reflectivity and grazing incident X-ray diffraction that even though interface between top Cu layer and Ni layer became rougher, the contrast of Cu and Ni's electron density became manifest after ion irradiation. In addition, the strain after deposition of the films was relaxed after ion irradiation. Strain relaxation related with change of magnetic properties and mechanism of intermixed layer's formation was explained by thermo-chemical driving force due to elastic and inelastic collision of ions.
깨끗한 Si(001) 표면의 buckled dimer 구조 연구 : a(2×1)과 c(4×2)
김성수(S. S. Kim),김용욱(Y. W. Kim),박노길(N. G. Park),조원석(W. S. Cho),김주영(J. Y. Kim),채근화(K. H. Chae),황정남(C. N. Whang),김기석(K. S. Kim),최대선(D. S. Choi) 한국진공학회(ASCT) 1998 Applied Science and Convergence Technology Vol.7 No.1
CAICISS장치를 이용하여 깨끗한 Si(001) 표면에서 재배열하는 dimer의 원자구조를 분석하였다. Si(001) 표면에서 dimer 원자가 확실히 buckled 되어 있음을 확인하였고, asymmetry(2×1)구조와 c(4×2)구조가 공존하고 있음을 밝혔다. dimer 원자의 결합거리는 2.3±0.1 Å이고, buckling 각은 18±1° 였다. The geometric structure of dimer atoms on clean Si(001) surface was studied using CAICISS. We confirmed that dimer atoms were certainly buckled, and also found that asymmetry (2×1) and c(4×2) were coexisted. The intradimer bond length and the buckling angle of a dimer measured by CAICISS system were 2.3±0.1 Å and 18±1°, respectively.