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나노급 CMOSFET을 위한 니켈-코발트 합금을 이용한 니켈-실리사이드의 열안정성 개선
박기영,정순연,한인식,장잉잉,종준,이세광,이가원,왕진석,이희덕,Park, Kee-Young,Jung, Soon-Yen,Han, In-Shik,Zhang, Ying-Ying,Zhong, Zhun,Li, Shi-Guang,Lee, Ga-Won,Wang, Jin-Suk,Lee, Hi-Deok 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.1
In this paper, the Ni-Co alloy was used for thermal stability estimation comparison with Ni structure. The proposed Ni/Ni-Co structure exhibited wider range of rapid thermal process windows, lower sheet resistance in spite of high temperature annealing up to $700^{\circ}C$ for 30 min, more uniform interface via FE-SEM analysis, NiSi phase peak. Therefore, The proposed Ni/Ni-Co structure is highly promising for highly thermal immune Ni-silicide for nano-scale MOSFET technology.
나노급 CMOSFET을 위한 SOI기판에 도핑된 B1l을 이용한 니켈-실리사이드의 열안정성 개선
정순연,오순영,이원재,장잉잉,종준,이세광,김영철,이가원,왕진석,이희덕,Jung, Soon-Yen,Oh, Soon-Young,Lee, Won-Jae,Zhang, Ying-Ying,Zhong, Zhun,Li, Shi-Guang,Kim, Yeong-Cheol,Lee, Ga-Won,Wang, Jin-Suk,Lee, Hi-Deok 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.11
In this paper, thermal stability of Ni-silicide formed on the SOI substrate with $B_{11}$ has been characterized. The sheet resistance of Ni-silicide on un-doped SOI and $B_{11}$ implanted bulk substrate was increased after the post-silicidation annealing at $700^{\circ}C$ for 30 min. However, in case of $B_{11}$ implanted SOI substrate, the sheet resistance showed stable characteristics after the post-silicidation annealing up to $700^{\circ}C$ for 30 min. The main reason of the excellent property of $B_{11}$ sample is believed to be the retardation of Ni diffusion by the boron and bottom oxide layer of SOI. Therefore, retardation of Ni diffusion is highly desirable lot high performance Ni silicide technology.
나노급 CMOSFET을 위한 Boron Cluster(B18H22)가 이온 주입된(SOI 및 Bulk)기판에 Ni-V합금을 이용한 Ni-silicide의 열안정성 개선
이세광,이원재,장잉잉,종준,정순연,이가원,왕진석,이희덕,Li, Shu-Guang,Lee, Won-Jae,Zhang, Ying-Ying,Zhun, Zhong,Jung, Soon-Yen,Lee, Ga-Won,Wang, Jin-Suk,Lee, Hi-Deok 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.6
In this paper, the formation and thermal stability characteristics of Ni silicide using Ni-V alloy on Boron cluster ($B_{18}H_{22}$) implanted bulk and SOI substrate were examined in comparison with pure Ni for nano-scale CMOSFET. The Ni silicide using Ni-V alloy on $B_{18}H_{22}$ implanted SOI substrate after high temperature post-silicidation annealing showed the lower sheet resistance, no agglomeration interface image and lower surface roughness than that using pure Ni. The thermal stability of Ni silicide was improved by using Ni-V alloy on $B_{18}H_{22}$ implanted SOI substrate.
Ge-MOSFETs을 위한 Ni-Co 합금을 이용한 Ni-germanide의 열안정성 개선
박기영,정순연,장잉이,한인식,이세광,종준,신홍식,김영철,김재준,이가원,왕진석,이희덕,Park, Kee-Young,Jung, Soon-Yen,Zhang, Ying-Ying,Han, In-Shik,Li, Shi-Guang,Zhong, Zhun,Shin, Hong-Sik,Kim, Yeong-Cheol,Kim, Jae-Jun,Lee, Ga-Won,Wang, Jin 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.8
In this paper, Ni-Co alloy was used to improve thermal stability of Ni Germanide. It was found that uniform germanide is obtained on epitaxial Ge-on-Si substrate by employing Ni-Co alloy. Moreover, neither agglomeration nor penetration is observed during post-germanidation annealing process. The thermal stability of Ni germanide using Ni-Co alloy is improved due to the less agglomeration of Germanide. Therefore, the proposed Ni-Co alloy is promising for highly thermal immune Ni germanide for nano scale Ge-MOSFETs technology.
Ni-Silicide 형성 후 후속공정 열처리에 의한 Abnormal Oxidation 현상을 As-doping된 Bulk와 SOI에서 비교 연구
정순연(Soon-Yen Jung),이원재(Won-Jae Lee),장잉잉(Ying-Ying Zhang),종준(Zhun Zhong),이세광(Shi-Guang Li),이가원(Ga-Won Lee),왕진석(Jin-Suk Wang),이희덕(Hi-Deok Lee) 대한전자공학회 2006 대한전자공학회 학술대회 Vol.2006 No.11
In this paper, we found an unintended oxidation on the Nickel-silicide surfaces, which arises only As doped substrate when we adopt it to the BF₂, B₁₁ and As doped substrates. The abnormal oxidation phenomena happened when As doped substrate is annealed after the NiSi formation. It is revealed that the main reason of the oxidation is the thermal energy that working between As and Si in the Silicide layer and substrate. Oxide distributes only above the silicide-island when the agglomeration happens. It is highly necessary to prevent the unwanted oxygen because it can cause fatal defects to the nano CMOSFET devices.