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Punch-Through Path 제어 기반의 1T-DRAM 소자
조승준(Seung-Jun Cho),이도현(Do-Hyun Lee),박하민(Hamin Park) 대한전자공학회 2023 대한전자공학회 학술대회 Vol.2023 No.11
As the integration density of conventional 1T-1C DRAM has reached its limits, a new 1T-DRAM structure for higher integration density has been proposed. In this paper, we propose a new 1TDRAM device structure based on the punch-through path control utilizing band-to-band tunneling, and validate the DRAM operation of this structure through TCAD simulation.