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BCl<sub>3</sub> 기반의 혼합가스들을 이용한 InP 고밀도 유도결합 플라즈마 식각
조관식,임완태,백인규,이제원,전민현,Cho, Guan-Sik,Lim, Wan-tae,Baek, In-Kyoo,Lee, Je-won,Jeon, Min-hyun 한국재료학회 2003 한국재료학회지 Vol.13 No.12
We studied InP etching in high density planar inductively coupled $BCl_3$and $BCl_3$/Ar plasmas(PICP). The investigated process parameters were PICP source power, RIE chuck power, chamber pressure and $BCl_3$/Ar gas composition. It was found that increase of PICP source power and RIE chuck power increased etch rate of InP, while that of chamber pressure decreased etch rate. Etched InP surface was clean and smooth (RMS roughness <2 nm) with a moderate etch rate (300-500 $\AA$/min) after the planar $BCl_3$/Ar ICP etching. It may make it possible to open a new regime of InP etching with $CH_4$$H_2$-free plasma chemistry. Some amount of Ar addition (<50%) also improved etch rates of InP, while too much Ar addition reduced etch rates of InP.
졸겔법으로 제작된 Al-doped ZnO 박막의 Aluminum Chloride 농도에 따른 구조적 및 광학적 특성
조관식 ( Guan Sik Cho ),김민수 ( Min Su Kim ),임광국 ( Kwang Gug Yim ),이재용 ( Jae Yong Lee ),임재영 ( Jae Young Leem ) 대한금속재료학회(구 대한금속학회) 2012 대한금속·재료학회지 Vol.50 No.11
Al-doped ZnO (AZO) thin films were grown on quartz substrates by the sol-gel method. The effects of the Al mole fraction on the structural and optical properties of the AZO thin films were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-VIS spectroscopy. The particle size of the AZO thin films decreased with an increase in Al concentrations. The optical parameters, the optical band gap, absorption coefficient, refractive index, dispersion parameter, and optical conductivity, were studied in order to investigate the effects of Al concentration on the optical properties of AZO thin films. The dispersion energy, single-oscillator energy, average oscillator wavelength, average oscillator strength, and refractive index at an infinite wavelength of the AZO thin films were affected by the Al incorporation. The optical conductivity of the AZO thin films also increased with increasing photon energy.
R-plane Sapphire 기판에 수열합성법으로 제작된 ZnO 나노구조체의 성장 및 특성
조관식 ( Guan Sik Cho ),김민수 ( Min Su Kim ),임재영 ( Jae Young Leem ) 대한금속재료학회 ( 구 대한금속학회 ) 2012 대한금속·재료학회지 Vol.50 No.8
ZnO nanostructures were grown on R-plane sapphire substrates with seed layers annealed at different temperatures ranging from 600 to 800℃. The properties of the ZnO nanostructures were investigated by scanning electron microscopy, high-resolution X-ray diffraction, UV-visible spectrophotometer, and photoluminescence. For the as-prepared seed layers, ZnO nanorods and ZnO nanosheets were observed. However, only ZnO nanorods were grown when the annealing temperature was above 700℃. The crystal qualities of the ZnO nanostructures were enhanced when the seed layers were annealed at 700℃. In addition, the full width at half maximum (FWHM) of near-band-edge emission (NBE) peak was decreased from 139 to 129meV by increasing the annealing temperature to 700℃. However, the FWHM was slightly increased again by a further increase in the annealing temperature. Optical transmittance in the UV region was almost zero, while that in the visible region was gradually increased as the annealing temperature increased to 700℃. The optical band gap of the ZnO nanostructures was increased as the annealing temperature increased to 700℃. It is found that the optical properties as well as the structural properties of the rod-shaped ZnO nanostructures grown on R-plane sapphire substrates by hydrothermal method are improved when the seed layers are annealed at 700℃.
고밀도 평판형 유도결합 BCl<sub>3</sub>/SF<sub>6</sub> 플라즈마를 이용한 GaAs/AlGaAs와 InGaP 반도체의 선택적 식각에 관한 연구
유승열,류현우,임완태,이제원,조관식,전민현,송한정,이봉주,고종수,고정상,Yoo Seungryul,Ryu Hyunwoo,Lim Wantae,Lee Jewon,Cho Guan Sik,Jeon Minhyon,Song Hanjung,Lee BongJu,Ko Jong Soo,Go Jeung Sang,Pearton S. J. 한국재료학회 2005 한국재료학회지 Vol.15 No.3
We investigated selective dry etching of GaAs over AlGaAs and InGaP in high density planar inductively coupled $BCl_3/SF_6$ plasmas. The process parameters were ICP source power (0-500 W), RE chuck power (0-30W) and gas composition $(60-100\%\;BCl_3\;in\;BCl_3/SF_6)$. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching. $BCl_3/SF_6$ selective etching of GaAs showed quite good results in this study. Selectivities of GaAs $(GaAs:AlGaAs\~36:1,\;GaAs:InGaP\~45:1)$ were superior at $18BCl_3/2SF_6$, 20 W RF chuck power, 300 W ICP source power and 7.5 mTorr. Addition of $(5-15\%)SF_6\;to\;BCl_3$ produced relatively high selectivities of GaAs over AlGaAs and InGaP during etching due to decrease of etch rates of AlGaAs and InGaP (boiling points of etch products: $AlF_3\~1300^{\circ}C,\;InF_3>1200^{\circ}C$ at atmosphere) at the condition. SEM and AFM data showed slightly sloped sidewall and somewhat rough surface$(RMS\~9nm)$. XPS study on the surface of processed GaAs proved a very clean surface after dry etching. It shows that planar inductively coupled $BCl_3/SF_6$ plasmas could be a good candidate for selective dry etching of GaAs over AlGaAs and InGaP.
BCl<sub>3</sub> 평판형 유도결합 플라즈마를 이용한 GaAs 건식식각
임완태,백인규,정필구,이제원,조관식,이주인,조국산,Lim, Wan-tea,Baek, In-kyoo,Jung, Pil-gu,Lee, Je-won,Cho, Guan-Sik,Lee, Joo-In,Cho, Kuk-San,Pearton, S.J. 한국재료학회 2003 한국재료학회지 Vol.13 No.4
We studied BCl$_3$ dry etching of GaAs in a planar inductively coupled plasma system. The investigated process parameters were planar ICP source power, chamber pressure, RIE chuck power and gas flow rate. The ICP source power was varied from 0 to 500 W. Chamber pressure, RIE chuck power and gas flow rate were controlled from 5 to 15 mTorr, 0 to 150 W and 10 to 40 sccm, respectively. We found that a process condition at 20 sccm $BCl_3$ 300 W ICP, 100 W RIE and 7.5 mTorr chamber pressure gave an excellent etch result. The etched GaAs feature depicted extremely smooth surface (RMS roughness < 1 nm), vertical sidewall, relatively fast etch rate (> $3000\AA$/min) and good selectivity to a photoresist (> 3 : 1). XPS study indicated a very clean surface of the material after dry etching of GaAs. We also noticed that our planar ICP source was successfully ignited both with and without RIE chuck power, which was generally not the case with a typical cylindrical ICP source, where assistance of RIE chuck power was required for turning on a plasma and maintaining it. It demonstrated that the planar ICP source could be a very versatile tool for advanced dry etching of damage-sensitive compound semiconductors.
광학 박막을 채용한 CMOS 이미지 센서 픽셀의 수광 효율
강명훈,고은미,이제원,조관식,Kang, Myung-Hoon,Ko, Eun-Mi,Lee, Je-Won,Cho, Guan-Sik 한국광학회 2009 한국광학회지 Vol.20 No.1
We consider introducing an optical thin film to the light guiding wall of a pixel in order to enhance the light guiding efficiency of a CMOS image sensor. Simulating the reflectance as a function of the incidence angle using the Essential Macleod program, we find that the range of total internal reflection is greatly increased for several materials. Particularly when air is chosen as the thin film material, the critical angle of total internal reflection could be shifted to about 50 degrees. CMOS 이미지 센서의 수광 효율을 높이기 위해서 픽셀의 광 통로 벽에 광학 박막의 도입을 제안하고자 한다. Essential Macleod를 이용하여 시뮬레이션해 본 결과, 전반사가 일어나는 범위가 현저히 증가하였다. 특히 공기 박막을 도입할 경우에, 그 효과가 가장 현저하여, 광 통로 벽에서의 전반사 임계각이 50도로까지 확대되었다.
BCl<sub>3</sub>및 BCl<sub>3</sub>/Ar 고밀도 유도결합 플라즈마를 이용한 GaAs와 AlGaS 반도체 소자의 건식식각
임완태,백인규,이제원,조관식,전민현,Lim, Wan-tae,Baek, In-kyoo,Lee, Je-won,Cho, Guan-Sik,Jeon, Min-hyun 한국재료학회 2003 한국재료학회지 Vol.13 No.10
We investigated dry etching of GaAs and AiGaAs in a high density planar inductively coupled plasma system with BCl$_3$and BCl$_3$/Ar gas chemistry. A detailed etch process study of GaAs and ALGaAs was peformed as functions of ICP source power, RIE chuck power and mixing ratio of $BCl_3$ and Ar. Chamber process pressure was fixed at 7.5 mTorr in this study. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RIE chuck power. It was also found that etch rates of GaAs in $15BCi_3$/5Ar plasmas were relatively high with applied RIE chuck power compared to pure 20 sccm $BCl_3$plasmas. The result was the same as AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AlGaAs features etched at 20 sccm $BCl_3$and $15BCl_3$/5Ar with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.
다층 RIE Electrode를 이용한 아크릴의 O<sub>2</sub>/N<sub>2</sub> 플라즈마 건식 식각
김재권,김주형,박연현,주영우,백인규,조관식,송한정,이제원,Kim, Jae-Kwon,Kim, Ju-Hyeong,Park, Yeon-Hyun,Joo, Young-Woo,Baek, In-Kyeu,Cho, Guan-Sik,Song, Han-Jung,Lee, Je-Won 한국재료학회 2007 한국재료학회지 Vol.17 No.12
We investigated dry etching of acrylic (PMMA) in $O_2/N_2$ plasmas using a multi-layers electrode reactive ion etching (RIE) system. The multi-layers electrode RIE system had an electrode (or a chuck) consisted of 4 individual layers in a series. The diameter of the electrodes was 150 mm. The etch process parameters we studied were both applied RIE chuck power on the electrodes and % $O_2$ composition in the $N_2/O_2$ plasma mixtures. In details, the RIE chuck power was changed from 75 to 200 W.% $O_2$ in the plasmas was varied from 0 to 100% at the fixed total gas flow rates of 20 sccm. The etch results of acrylic in the multilayers electrode RIE system were characterized in terms of negatively induced dc bias on the electrode, etch rates and RMS surface roughness. Etch rate of acrylic was increased more than twice from about $0.2{\mu}m/min$ to over $0.4{\mu}m/min$ when RIE chuck power was changed from 75 to 200 W. 1 sigma uniformity of etch rate variation of acrylic on the 4 layers electrode was slightly increased from 2.3 to 3.2% when RIE chuck power was changed from 75 to 200 W at the fixed etch condition of 16 sccm $O_2/4\;sccm\;N_2$ gas flow and 100 mTorr chamber pressure. Surface morphology was also investigated using both a surface profilometry and scanning electron microscopy (SEM). The RMS roughness of etched acrylic surface was strongly affected by % $O_2$ composition in the $O_2/N_2$ plasmas. However, RIE chuck power changes hardly affected the roughness results in the range of 75-200 W. During etching experiment, Optical Emission Spectroscopy (OES) data was taken and we found both $N_2$ peak (354.27 nm) and $O_2$ peak (777.54 nm). The preliminarily overall results showed that the multi-layers electrode concept could be successfully utilized for high volume reactive ion etching of acrylic in the future.
물 묻은 지문을 인식하기 위한 프리즘 광학계의 설계 및 실험적 고찰
강명훈,김진수,정진우,고은미,김재규,조관식,송한정,황재문,Kang, Myung-Hoon,Kim, Jin-Su,Jung, Jin-Woo,Ko, Eun-Mi,Kim, Jae-Gu,Cho, Guan-Sik,Song, Han-Jung,Hwang, Jae-Mun 한국광학회 2007 한국광학회지 Vol.18 No.6
본 연구는 지문 인식 시스템 중에서 프리즘을 이용한 광학계의 설계에 대한 것이다. 이는 프리즘, 렌즈, 그리고 CMOS 이미지 센서(혹은 CCD) 등으로 구성되어 있는 광학계이다. 종래의 프리즘을 이용한 지문인식 광학계에서는 지문에 물이 묻어 있는 경우에 영상의 품질이 현저히 저하되는 문제점이 있다. 이 경우에 프리즘의 굴절률을 높임으로써 영상의 품질을 충분히 높일 수 있었다. 또한 프리즘과 렌즈를 사용함으로 인하여 발생하는 비대칭 축소 왜곡(anamorphic distortion)과 상면의 지를 최소화되는 프리즘 꼭지각 $\alpha$를 제안한다. We propose a design and analysis of an optical system using a prism with a high enough refractive index for wet fingerprint identification. Important parameters including the tilting angle($\beta$) of the $1^{st}$ image plane, an anamorphic distortion, and a tilt of image plane are considered in terms of the apex angle of the prism($\alpha$) and refractive index of the prism material. Our suggestion on refractive index and apex angle of the prism corroborates well with experimental results.