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The Optical Properties of Amorphous As₂S₃Thin Film with Ag Photodoping
정홍배 光云大學校 1986 論文集 Vol.15 No.-
본 연구에서는 a-As₂S₃와 Ag/a-As₂S₃계의 흡수계수 측정에 의한 이동도 갭내의 상태밀도 및 광흑화 현상을 관찰하였다. 광흑화 현상에 따른 a-As₂S₃와 Ag/a-As₂S₃계의 광학 갭에너지, ?? a-As₂S₃의 경우 빛 조사 시간이 증가함에 따라 2.32(eV)에서 2.03(eV)까지 감소하였으며, Ag/a-As₂S₃의 경우 Ag량이 증가함에 따라서 2.32(eV)에서 2.02(eV)까지 감소하였다. 물질상수, B는 a-As₂S₃와 Ag/a-As₂S₃의 경우 각각 광조사 시간과 Ag량이 증가함에 따라 감소하였으며, 순수한 a-As₂S₃박막의 경우 ??이였다. 갭내의 상태밀도는 a-As₂S₃의 경우 ??까지 각각 증가하였다. In this study, the density of state in the mobility gap and the photodarkening effect of a-As₂S₃ and Ag/a-As₂S₃system have been investigated by the measurement of optical absorption coefficient. For the phtodarkening effect, the optical-gap energy, ?? decreased from 2.32(eV) to 2.03(eV) with increasing of light illumination time in a-As₂S₃, decreased from 2.32(eV) to 2.02(eV) with increasing of Ag content in Ag/a-As₂S₃system. Material constant, B, decreased with increasing of Ag content in Ag/a-As₂S₃ and increasing of light illumination time in a-As₂S₃. In case of pure a-As₂S₃ thin film, B was ?? The density of states in the mobility gap increased from ?? and from ?? in a-As₂S₃ and in Ag/a-As₂S₃, respectively.
LICVD에 의해 생성된 수소가 주입된 비정질 실리콘의 박막 특성
정홍배 光云大學校 1985 論文集 Vol.14 No.-
LICVD에 의한 수고가 주입된 비정질 실리콘의 침전(deposition) 방법을 서술하고, 이 방법에 의한 박막의 여러가지 전자적 특성을 보고하였다. 결과로서, 성장율은 가스온도에 지수적으로 의존하고 가스온도는 레이저로부터 흡수된 에너지와 열 조건에 의해 손실된 에너지간의 정상 상태 균형에 의해 결정된다. 박막 특성은 평형 수소용량에 따르며 기판온도에 의해 우선적으로 조절된다.
單一트랩 準位로 된 칼코게나이드 유리質의 스위치機構 解釋
鄭鴻倍 光云大學校 1983 論文集 Vol.12 No.-
In this study, the analysis of threshold switching mechanism of chalcogenide glass were carried out. The analysis based on the space-charge overlapping were applied to the case of the single level of traps for electrons and holes, respectively. As the results, it's results were more closed experimental values than the case of exponential values than the case of exponential trap distribution, but it shows little a difference at on-state between theorical and experimental values. This results shows that the energy band of chalcogenide glass consists of single trap level and exponential trap distribution.
무기질 a-$Se_{75}Ge_{25}$ 박막을 이용한 네가티브형 포토레지스트의 특성연구
정홍배,허훈,김태완,Chung, Hong-Bay,Huh, Hoon,Kim, Tae-Wan 한국전기전자재료학회 1988 電氣電子材料學會誌 Vol.1 No.4
본 연구에서는 미세패턴 형성을 위한 비정질 $Se_{75}Ge_{25}$박막의 네가티브형 포토레지스토에 대하여 고찰하였다. 습식현상공정을 통해 대비도가 포지티브형인 경우 1.4였고 네가티브형인 경우 2.9를 나타내어 네가티브형인 경우가 미세선폭 조절능력이 더 우수함을 알 수 있었다. 표면사진으로부터 약 1.mu.m정도의 미세패턴을 얻었음을 확인할 수 있었다.
Ag가 도핑된 칼코게나이드 As40Ge10Se15S35 박막의 광분해, 광확산특성 및 홀로그래픽 격자형성
정홍배 대한전기학회 2006 전기학회논문지C Vol.55 No.10C
- In the present work, we investigated the photodissolution and photodiffusion effect on the interface of Ag/chalcogenide As40Ge10Se15S35 thin film by measuring the absorption coefficient, the optical density, the resistance change of Ag layer. It was found that the photodissolution/photodiffution ratio depends on the magnitude of photon energy absorbed in the chalcogenide thin film and the depth of photodiffution was proportional to the square root of the exposed time. Also, we have investigated the holographic grating formation with P-polarization states on chalcogenide As40Ge10Se15S35 thin film and As40Ge10Se15S35/Ag double layer structure thin film. Holographic gratings have been formed using He-Ne laser (632.8 nm) which have a smaller energy than the optical energy gap, Eg opt of the film, i. e., an exposure of sub-bandgap light (Eg opt) under P-polarization. As the results, we found that the diffraction efficiency on As40Ge10Se15S35/Ag double layer structure thin film was more higher than that on single As40Ge10Se15S35 thin film. Also, we obtained that the maximum diffraction efficiency was 0.27 %, 1,000 sec on As40Ge10Se15S35 (1 μm)/Ag (10 nm) double layer structure thin film by (P: P) polarized recording beam. It will offer lots of information for the photodoping mechanism and the analyses of chalcogenide thin films.
정홍배,조원주,구상모,Chung Hong-Bay,Cho Won-Ju,Ku Sang-Mo 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.10
Chalcogenide Phase change memory has the high performance necessary for next-generation memory, because it is a nonvolatile memory with high programming speed, low programming voltage, high sensing margin, low power consumption and long cycle duration. To minimize the power consumption and the program voltage, the new composition material which shows the better phase-change properties than conventional $Ge_2Sb_2Te_5$ device has to be needed by accurate material engineering. In the present work, we investigate the basic thermal and the electrical properties due to phase-change compared with chalcogenide-based new composition $Ge_1Se_1Te_2$ material thin film and convetional $Ge_2Sb_2Te_5$ PRAM thin film. The fabricated new composition $Ge_1Se_1Te_2$ thin film exhibited a successful switching between an amorphous and a crystalline phase by applying a 950 ns -6.2 V set pulse and a 90 ns -8.2 V reset pulse. It is expected that the new composition $Ge_1Se_1Te_2$ material thin film device will be possible to applicable to overcome the Set/Reset problem for the nonvolatile memory device element of PRAM instead of conventional $Ge_2Sb_2Te_5$ device.