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$n.cuInSe_2$-Polysulfide Junction의 태양전지에 관한 연구
김창대,정해문,조동산,Kim, Chang-Dae,Jeong, Hae-Mun,Jo, Dong-San 대한전자공학회 1985 전자공학회지 Vol.22 No.3
Bridgnan방법으로 성장시킨 CuInse2단결정을 Se분위기 속에서 열처리하여 carrier농도가 2.6×1016/㎤인 n·Culnse2단결정을 얻었다. 이 단결정을 photoanode로 하고 polysulfide용액으로 3M KOH+3M Na2S+4M S를 사용하여 n·Culnsel-3M KOH+3M Na2S+4M S접합의 태양전지를 만들었다. 이 태양전지는 태양에너지 100mW/㎤의 조건하에서 FF=0.44이며, 태양에너지 변환효율은 5.67% 이었다. CulnSe2 single crystals were grown by the Bridgman method. The n.CulnSe2 single cry seals with a carrier concentration of 2.6$\times$1016/㎤ were obtained by a thermal treatment of the grown CulnSe2 single crystals in selenium atmosphere. The solar cell of n.CulnSe2-3M KOH+3M Na2 S+4M S junction was prepared by using n.Culnsel single crystal as a photoanode, 3M KOH+SM Nat S+4M S as Polysulfide solutions. The FF of the solar cell was 0.44 under 100 mW/cml illumination condition, and the conversion efficiency was 5.67%.
MnxCd1-xGa₂Se₄(0≤X≤1) 반자성 반도체의 결정성장과 구조특성 연구
신동호(Dong-Ho Shin),정해문(Hae-Mun Jeong),김창대(Chang-Dae Kim),김화택(Wha-Tek Kim) 한국진공학회(ASCT) 1992 Applied Science and Convergence Technology Vol.1 No.3
반자성 반도체인 Mn_xCd_(1-x)Ga₂Se₄의 단결정을 조성비 0≤X≤1 영역에서 TVTP(time-varying temperature profile)에 의한 화학수송법으로 성장하였다. 성장된 단결정은 자연면을 갖는 경면으로 성장되었으며, X=1.0 경우인 MnGa₂Se₄ 단결정의 크기는 12×6×1.5 ㎣이었다. Mn_xCd_(1-x)Ga₂Se₄의 결정구조는 defect chalcopyrite 구조이었으며, 조성비 X가 증가함에 따라 격자상수 a는 선형적으로 감소하고, 격자상수 c는 증가하였다. 또한 distortion factor 2-(c/a)는 감소하였다. Single crystals of Mn_xCd_(1-x)Ga₂Se₄ semimagnetic semiconductors were grown in various compositions X by the chemical transport reaction method modified by the time-varying temperature profile procedure for 0≤X≤1. All the grown single crystals have the mirror-smooth surfaces of the natural face. The average size of MnGa₂Se₄ single crystals which is the case of X=1.0 grown in this work is 12×6×1.5㎣. It has been determined from the X-ray diffraction analysis that Mn_xCd_(1-x)Ga₂Se₄(0≤X≤1) crystallizes in the defect chalcopyrite structure. As the composition of X increases, the lattice constant of a decreases linearly, while the lattice constant of c increases. Also, the distortion factor 2-(c/a) decreases with increasing the composition X.
Photoluminescence Properties of Ni - doped and Undoped CdGa₂Se₄ Single Crystals
김창대(Chang-Dae Kim),정해문(Hae-Mun Jeong),신동호(Dong-Ho Shin),김화택(Wha-Tek Kim) 한국진공학회(ASCT) 1992 Applied Science and Convergence Technology Vol.1 No.2
Iodine 화학수송법으로 성장한 Ni-doped CdGa₂Se₄와 undoped CdGa₂Se₄ 단결정의 PL 및 PLE 스펙트럼을 조사하였다. Undoped CdGa₂Se₄ 단결정의 PL 스펙트럼에서는 전도대아래 준 연속적으로 분포된 electron trap과 deep donor level, 그리고 가전자대 위 0.07 eV, 0.12 eV에 있는 acceptor level 사이의 전자전이에 의한 2개의 emission band를 2.13 eV와 1.20 eV 영역에서 관측하였으며, Ni-doped 단결정에서는 Ni^(2+) 이온의 여기상태 ³T₁ (³P)와 바닥상태 ³T₁ (³F) 사이의 전자전이에 의한 emission band를 1.48 eV 영역에서 관측하였다. 이러한 결과로부터 제안된 CdGa₂Se₄의 energy band model은 본 연구의 PL mechanism을 설명하는데 가능함을 보여주었다. PL and PLE spectra of Ni-doped and undoped CdGa₂Se₄ single crystals grown by the iodine transport technique have been investigated. In the PL spectra of undoped CdGa₂Se₄ two emission bands with the maxima at energies 2.13 and 1.20 eV are observed. The emission band at 2.13 eV is attributed to radiative transitions from quasi-continuously distributed traps below the bottom of the conduction band to an acceptor level at 0.07 eV above the valence band. Also, the emission band of 1.20 eV is assigned as DA (donor-accptor) pair recombination between a deep donor level and an acceptor level at 0.12 eV above the valence band. The emission band of 1.48 eV observed in Ni-doped CdGa₂Se₄ is due to intracenter transitions of Ni^(2+) ions from the excited state ³T₁ (³P) to the ground state ³T₁ (³F). The proposed energy band model permits is to explain the radiative recombinatiin processes in CdGa₂Se₄.
김화택(Wha-Tek Kim),윤상현(Sang-Hyun Yun),현승철(Seung-Cheol Hyun),김미양(Mi-Yang Kim),김용근(Yong-Geun Kim),김형곤(Hyung-Gon Kim),최성휴(Sung-Hyu Choe),윤창선(Chang-Sun Yoon),정해문(Hae-Mun Jeong) 한국진공학회(ASCT) 1994 Applied Science and Convergence Technology Vol.3 No.1
SbSBr, BiSBr, SbSBr : Co, BiSBr : Co, SbSBr : Ni 및 BiSBr : Ni 단결정을 수직 Bridgman 방법으로 성장시켰다. 성장된 단결정의 구조는 orthorhombic 구조이며, 광학적 energy band gap 구조는 간접전이형이었고, energy gap의 온도의존성은 일차 및 이차 상전이점에서 anomalous한 특성이 나타났다. 불순물로 첨가한 cobalt와 nickel은 T_d 대칭점에 Co^(2+) ion, Co^(3+) ion 및 Ni^(2+) ion으로 위치하며, 이들 ion의 energy 준위간의 전자전이에 의하여 불순물 광흡수 peak들이 나타난다. SbSBr, BiSBr, SbSBr : Co, BiSBr : Co, SbSBr : Ni and BiSBr : Ni single crystals were grown by the vertical Bridgman technique. The grown single crystals were crystallized in orthorhombic. The optical energy band gap of them was the indirect structure, and the temperature dependence of the energy gap showed anomalous properties at the first order phase transition and the second order one. Cobalt and nickel doped with a impurity are sited at the T_d symmetry points as the states of Co^(2+) or CO^(3+) and Ni^(2+) ions.
Screen Printing Method로 제작된 CdS 막의 광전도도
정해문,박철수 木浦大學校基礎科學硏究所 1985 基礎科學硏究誌 Vol.3 No.-
Photoconductive CdS films doped with CI were prepared by screen printing and sintering of CdS paste. The CdS paste consists of CdS, CdCl₂, and propylene glycol. The results of X-ray measurements showed that these samples belong to hexagonal structure, and the lattice constant were a=4.13A, c=6.71A. The spectral response of photoconductivity has two maxima. The one photoconductivity peak was observed at 524nm and the other broad peak at larger wavelength region at 285K. As the temperature decreases, the energy position of the maximum due to band absorption shifts towards shorter wavelength, and give a temperature coefficient of photoconductivity band peak of about ??. The rise and decay time of the photocontivity were 0.8ms and 0.7ms.
丁海文 木浦大學校基礎科學硏究所 1983 基礎科學硏究誌 Vol.1 No.-
GaSe single crystal was grown by Bridgman method and its crystal structure and lattice constant were measured by X-ray diffractometry. And the energy band gap of GaSe single crystal was determined by optical transmittance. The results obtained were lattice constant a=3.74Å, c=15.92Åand energy band gap Eg=1.94 eV. And the crystal structure of GaSe single crystal was hexagonal structure.