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정우식,나춘섭,Bong-Ki Min 대한화학회 2005 Bulletin of the Korean Chemical Society Vol.26 No.9
Nano- and microstructured indium nitride crystals were synthesized by the reaction of indium oxide (In2O3) powder and its pellet with ammonia in the temperature range 580-700 oC. The degree of nitridation of In2O3 to InN was very sensitive to the nitridation temperature. The formation of zero- to three-dimensional structured InN crystals demonstrated that In2O3 is nitridated to InN via two dominant parallel routes (solid (In2O3)-to-solid (InN) and gas (In2O)-to-solid (InN)). The growth of InN crystals with such various morphologies was explained by the vapor-solid (VS) mechanism where the degree of supersaturation of In vapor determines the growth morphology and the vapor was mainly by the reaction of In2O with ammonia and partially by sublimation of solid InN. The pellet method was proven to be useful to obtain homogeneous InN nanowires.
정우식,나춘섭,Bong-Ki Min 대한화학회 2005 Bulletin of the Korean Chemical Society Vol.26 No.1
Gallium nitride (GaN) powders and nanowires were prepared by using tris(N,N-dimethyldithiocarbamato)gallium(III) (Ga(DmDTC)3) and tris(N,N-diethyldithiocarbamato)gallium(III) (Ga(DeDTC)3) as new precursors. The GaN powders were obtained by reaction of the complexes with ammonia in the temperature ranging from 500 to 1100 oC. The process of conversion of the complexes to GaN was monitored by their weight loss, XRD, and 71Ga magic-angle spinning (MAS) NMR spectroscopy. Most likely the complexes decompose to γ -Ga2S3 and then turn into GaN via amorphous gallium thionitrides (GaSxNy). The reactivity of Ga(DmDTC)3 with ammonia was a little higher than that of Ga(DeDTC)3. Room-temperature photoluminescence spectra of asprepared GaN powders exhibited the band-edge emission of GaN at 363 nm. GaN nanowires were obtained by nitridation of as-ground γ -Ga2S3 powders to GaN powders, followed by sublimation without using templates or catalysts.
정우식,Bong-Ki Min,Jeong-Hyun Park,Sang-Won Seo,Woo Sik Jung,안광순 대한화학회 2011 Bulletin of the Korean Chemical Society Vol.32 No.5
Alumina particles wrapped in few-layer graphene sheets were prepared by calcining aluminum nitride powders under a mixed gas flow of carbon monoxide and argon. The graphene sheets were characterized by powder Xray diffraction (XRD), Raman spectroscopy, electron energy loss spectroscopy, and high-resolution transmission electron microscopy. The few-layer graphene sheets, which wrapped around the alumina particles, did not exhibit any diffraction peaks in the XRD patterns but did show three characteristic bands (D, G, and 2D bands) in the Raman spectra. The dye-sensitized solar cell (DSSC) with the alumina particles wrapped in fewlayer graphene sheets exhibited significantly improved overall energy-conversion efficiency, compared to conventional DSSC, due to longer electron lifetime.
정우식 대한화학회 2006 Bulletin of the Korean Chemical Society Vol.27 No.8
Nanostructures of gallium nitride (GaN) with a direct bandgap of 3.4 eV are of interest because of their great prospects in fundamental physical science, novel nanotechnology applications, and significant potential in optoelectronics.1 One-dimensional nanostructures such as nanowires and nanorods have been grown by various methods. Most of them are based on the chemical vapor deposition (CVD) of GaN on the substrate. The substrate is coated with transition metals such as Ni,2,3 Fe,4,5 Co,5 In,6 and Au,7 which inevitably results in undesired contamination within GaN nanostructures. One of the useful synthetic methods to avoid the contamination is to employ the so-called confined reactor such as the carbon nanotube8 or the anodic alumina membrane.9 GaN nanowires were obtained by placing the confined reactor on a mixture of Ga and Ga2O3 and calcining it under a flow of ammonia at temperatures ³900 oC.8,9 Their growth mechanism in the reactor remains unknown. In this report we prepare one-dimensional GaN nano- and microstructures by using a confined reactor made of alumina containing a Ga source and propose their growth mechanism.
휴먼서비스 분야 전공 대학생의 다문화 인식에 관한 연구
정우식,김은혜 한국사회조사연구소 2017 사회연구 Vol.18 No.2
이 연구의 목적은 미래의 휴먼서비스 전문인력이라고 판단되는 보건 및 복지계열 전공 대학생을 대상으로 그들의 다문화 인식의 영향요인을 대인관계 유능성과 자기효능감을 중심으로 확인하기 위해 시도되었다. 총 229명의 설문지가 최종 분석에 이용되었으며, 자료 분석은 기술 통계, t 검증, 일반화 선형모형, 상관관계, 단계적 변수선택법을 이용한 다중회귀분석으로 하였다. 대상자의 다문화 인식과 대인관계 유능성, 자기 효능감과 대인관계 유능성간의 유의한 상관관계가 있었다. 다문화 인식 미치는 영향 요인을 다중 회귀 분석으로 확인한 결과, 대인관계 유능성(t=2.27, p=0.025), 종교(t=2.09, 0.038), 1개월 이상 해외거주경험(t=-2.1, p=0.037), 차세대 보건복지 전문인력으로서의 기대감(t=2.85, p=0.005)의 개별적 요인이 통계적으로 유의한 영향을 미치는 요인으로 나타났고, 총 변량의 16.25%를 설명하는 것으로 나타났다. 보건 및 복지계열의 휴먼서비스 분야를 전공하는 대학생의 다문화 인식을 향상시키기 위해서는 이론교육의 바탕위에 경험적 교육이 연계된 다문화 교육과정의 도입과 대인관계 유능성을 고려한 다문화 교육 프로그램 개발의 필요성을 제시한다.