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CROSS 모양 채널을 가지는 소자의 성능 분석 및 NanoSheet 소자와의 비교
정도혁(Do-Hyuk Chung),김소영(SoYoung Kim) 대한전자공학회 2020 대한전자공학회 학술대회 Vol.2020 No.11
In this paper, cross-shaped gate-all-around transistor (Cross-FET) is explored by dc and ring oscillator (RO) benchmark compared with gate-all-around nanosheet transistor (NSFET). With the same effective width, Cross-FET shows an advantage in drive current by 5% compared with nanosheet structure and it can be more increased with stacked-channel structure. Cross-FET can be stacked by the same way of NSFET and with smaller number of stacked channels, and it can achieve higher drive current than NSFET. By using mixed-mode simulation of Sentaurus TCAD, Cross-FET and NSFET are evaluated through 5-stage Ring Oscillator and cross-FET showed better performance in the aspect of oscillation frequency.