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다중 슬릿 구조를 이용한 EFG 법으로 성장시킨 β-Ga<sub>2</sub>O<sub>3</sub> 단결정의 다양한 결정면에 따른 특성 분석
장희연,최수민,박미선,정광희,강진기,이태경,김형재,이원재,Hui-Yeon Jang,Su-Min Choi,Mi-Seon Park,Gwang-Hee Jung,Jin-Ki Kang,Tae-Kyung Lee,Hyoung-Jae Kim,Won-Jae Lee 한국결정성장학회 2024 한국결정성장학회지 Vol.34 No.1
β-Ga<sub>2</sub>O<sub>3</sub> is a material with a wide band gap of ~4.8 eV and a high breakdown-voltage of 8 MV/cm, and is attracting much attention in the field of power device applications. In addition, compared to representative WBG semiconductor materials such as SiC, GaN and Diamond, it has the advantage of enabling single crystal growth with high growth rate and low manufacturing cost [1-4]. In this study, we succeeded in growing a 10 mm thick β-Ga<sub>2</sub>O<sub>3</sub> single crystal doped with 0.3 mol% SnO<sub>2</sub> through the EFG (Edge-defined Film-fed Growth) method using multi-slit structure. The growth direction and growth plane were set to [010]/(010), respectively, and the growth speed was about 12 mm/h. The grown β-Ga<sub>2</sub>O<sub>3</sub> single crystal was cut into various crystal planes (010, 001, 100, ${\bar{2}}01$) and surface processed. The processed samples were compared for characteristics according to crystal plane through analysis such as XRD, UV/VIS/NIR/Spec., Mercury Probe, AFM and Etching. This research is expected to contribute to the development of power semiconductor technology in high-voltage and high-temperature applications, and selecting a substrate with better characteristics will play an important role in improving device performance and reliability.