http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
고온 동작용 SiC CMOS 소자/공정 및 집적회로 기술동향
원종일,정동윤,조두형,장현규,박건식,김상기,박종문,Won, J.I.,Jung, D.Y.,Cho, D.H.,Jang, H.G.,Park, K.S.,Kim, S.G.,Park, J.M. 한국전자통신연구원 2018 전자통신동향분석 Vol.33 No.6
Several industrial applications such as space exploration, aerospace, automotive, the downhole oil and gas industry, and geothermal power plants require specific electronic systems under extremely high temperatures. For the majority of such applications, silicon-based technologies (bulk silicon, silicon-on-insulator) are limited by their maximum operating temperature. Silicon carbide (SiC) has been recognized as one of the prime candidates for providing the desired semiconductor in extremely high-temperature applications. In addition, it has become particularly interesting owing to a Si-compatible process technology for dedicated devices and integrated circuits. This paper briefly introduces a variety of SiC-based integrated circuits for use under extremely high temperatures and covers the technology trend of SiC CMOS devices and processes including the useful implementation of SiC ICs.
문재경(Jae-Kyoung Mun),배성범(S.B. Bae),이형석(H.S. Lee),김진식(Z.S. Kim),이현수(H.S. Lee),장현규(H.G. Jang) 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.11
Global R&D trend of high efficiency and low loss GaN power semiconductor technologies will be presented in the conference. This is why to mention the importance of R&D in our country and hope to be next generation big player in the IT-consumer, EV/HEV, PV, ESS, FC, renewable energy markets. Finally, we will talk about several R&D results of GaN power devices and power conversion modules developed in ETRI for last several years.