원료물질에 따른 실리콘 질화막의 원자층 증착 특성 비교

이원준,이주현,이연승,나사균,박종욱,Lee Won-Jun,Lee Joo-Hyeon,Lee Yeon-Seong,Rha Sa-Kyun,Park Chong-Ook 한국재료학회 2004 한국재료학회지 Vol.14 No.2

Silicon nitride thin films were deposited by atomic layer deposition (ALD) technique in a batch-type reactor by alternating exposures of precursors. XJAKO200414714156408$_4$ or$ SiH_2$$Cl_2$ was used as the Si precursor, $NH_3$ was used as the N precursor, and the deposited films were characterized comparatively. The thickness of the film linearly increased with the number of deposition cycles, so that the thickness of the film can be precisely controlled by adjusting the number of cycles. As compared with the deposition using$ SiCl_4$, the deposition using $SiH_2$$Cl_2$ exhibited larger deposition rate at lower precursor exposures, and the deposited films using $SiH_2$$Cl_2$ had lower wet etch rate in a diluted HF solution. Silicon nitride films with the Si:N ratio of approximately 1:1 were obtained using either Si precursors at $500^{\circ}C$, however, the films deposited using $SiH_2$$Cl_2$ exhibited higher concentration of H as compared with those of the $SiC_4$ case. Silicon nitride thin films deposited by ALD showed similar physical properties, such as composition or integrity, with the silicon nitride films deposited by low-pressure chemical vapor deposition, lowering deposition temperature by more than $200^{\circ}C$.

HVPE를 이용하여 r-plane 사파이어 위에 multi-step으로 성장시킨 a-plane GaN 에피층의 특성 연구

이원준,박미선,장연숙,이원재,하주형,최영준,이혜용,김홍승,Lee, Won-Jun,Park, Mi-Seon,Jang, Yeon-Suk,Lee, Won-Jae,Ha, Ju-Hyung,Choi, Young-Jun,Lee, Hae-Yong,Kim, Hong-Seung 한국결정성장학회 2016 한국결정성장학회지 Vol.26 No.3

본 연구에서는 HVPE(Hydride Vapor Phase Epitaxy)를 이용하여 각각 다른 V/III ratio를 가지는 multi-step의 성장 시간 변화에 따라 r-plane 사파이어 위에 성장되는 a-plane GaN 에피층의 결정성에 대하여 연구하였다. 또한 이번 연구의 결과를 선행 연구에서 single-step으로 r-plane 사파이어 위에 성장시킨 a-GaN 에피층의 결과와 비교하였다. Multi-step으로 r-plane 사파이어 위에 a-plane GaN 에피층을 성장시켰을 때, source HCl의 유량과 성장 시간이 증가함에 따라 a-plane GaN 에피층에 대한 rocking curve의 FWHM(Full Width at Half Maximum) 값이 감소하였다. 높은 source HCl의 유량을 갖는 first step과 second step의 성장 시간과 source HCl의 유량이 증가할수록 a-plane GaN 에피층 내부의 void가 감소하였다. 결과적으로 first step과 second step의 성장 시간이 가장 긴 조건에서 성장된 a-plane GaN 에피층이 가장 낮은 FWHM 값인 584 arcsec을 가지며, azimuth angle의 의존도가 가장 적은 것으로 확인되었다. In this study, the crystalline property of a-plane GaN epitaxial layer grown on r-plane sapphire by a HVPE method has been investigated according to the V/III ratio and the growth time of multi-step growth. Furthermore, these results were compared with the previous result obtained from the single-step growth of a-plane GaN on r-plane sapphire substrate. In the multi-step growth for a-plane GaN epitaxial layer on r-plane sapphire, the FWHM values of rocking curve in GaN epitaxial layer were decreased as the HCl source flow rate and the growth time were increased. The void formed in epitaxial layer was continuously decreased as the growth time in first step and second step using a higher HCl flow rate was increased. As a result, the GaN layer obtained with the longest growth time on the first step and second step exhibited the lowest FWHM values of 584 arcsec and the smallest dependence of azimuth angle.

SiH₂Cl₂ 와 O₃을 이용한 원자층 증착법에 의해 제조된 실리콘 산화막의 특성

이원준,이주현,한창희,김운중,이연승,나사균,Lee Won-Jun,Lee Joo-Hyeon,Han Chang-Hee,Kim Un-Jung,Lee Youn-Seung,Rha Sa-Kyun 한국재료학회 2004 한국재료학회지 Vol.14 No.2

Silicon dioxide thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method using alternating exposures of $SiH_2$$Cl_2$ and $O_3$ at $300^{\circ}C$. $O_3$ was generated by corona discharge inside the delivery line of $O_2$. The oxide film was deposited mainly from $O_3$ not from $O_2$, because the deposited film was not observed without corona discharge under the same process conditions. The growth rate of the deposited films increased linearly with increasing the exposures of $SiH_2$$Cl_2$ and $O_3$ simultaneously, and was saturated at approximately 0.35 nm/cycle with the reactant exposures over $3.6 ${\times}$ 10^{9}$ /L. At a fixed $SiH_2$$Cl_2$ exposure of $1.2 ${\times}$ 10^{9}$L, growth rate increased with $O_3$ exposure and was saturated at approximately 0.28 nm/cycle with $O_3$ exposures over$ 2.4 ${\times}$ 10^{9}$ L. The composition of the deposited film also varied with the exposure of $O_3$. The [O]/[Si] ratio gradually increased up to 2 with increasing the exposure of $O_3$. Finally, the characteristics of ALD films were compared with those of the silicon oxide films deposited by conventional chemical vapor deposition (CVD) methods. The silicon oxide film prepared by ALD at $300^{\circ}C$ showed better stoichiometry and wet etch rate than those of the silicon oxide films deposited by low-pressure CVD (LPCVD) and atmospheric-pressure CVD (APCVD) at the deposition temperatures ranging from 400 to $800^{\circ}C$.

HVPE법을 이용하여 PSS와 AlN Buffered PSS 위에 성장시킨 GaN 박막의 결정 특성

이원준,박미선,이원재,김일수,최영준,이혜용,Lee, Won Jun,Park, Mi Seon,Lee, Won Jae,Kim, Il Su,Choi, Young Jun,Lee, Hae Yong 한국전기전자재료학회 2018 전기전자재료학회논문지 Vol.31 No.6

An epitaxial GaN layer was grown on a cone-shape-patterned sapphire substrate (PSS) (Sample A) and an AlN-buffered PSS (Sample B) with two growth steps under the same process conditions by employing the hydride vapor phase epitaxy (HVPE) method. We have investigated the characteristics of the GaN layer grown on two kinds of substrates at each growth step. The cross-sectional SEM image of the GaN layer grown on the two types of substrates showed growth states of GaN layers formed during the 1st and 2nd growth steps with different growth durations. Dislocation density was obtained by calculation using the FWHM value of the rocking curve for (002) and (102). Sample A showed 2.62+08E and 6.66+08E and sample B exhibited 5.74+07E and 1.65+08E for two different planes. The red shift was observed is photoluminescence (PL) analysis and Raman spectroscopy results. GaN layers grown on AlN-buffered PSS exhibited better optical and crystallographic properties than GaN layers grown on PSS.

Design Issues and QoS Negotiation Protocol Model for Networked Multimedia Systems

이원준,Lee, Won-Jun Korea Information Processing Society 2002 정보처리학회논문지 C : 정보통신,정보보안 Vol.9 No.5

This Paper describes our experiences with the design and implementation of a networked multimedia information management system in an object-oriented framework for distributed multimedia applications, and an integrated QoS-resource negotiation protocol which has been applied to a video server in our networked multimedia infrastructure. The salient features of our framework to support efficient multimedia streaming are explained. Next the paper explores the challenges faced in integrating the proposed QoS negotiation policy into the framework. 본 논문에서는 분산 멀티미디어 응용을 위한 객체 지향형 프레임워크 방식으로 설계된 네트워크 멀티미디어 관리 시스템 개발에 관한 설계 이슈 및 프로토타입 개발 경험을 기술하고, 특히 멀티미디어 관리 시스템의 일부로서 개발한 비디오 서버 상에 적용 가능한 통합형 QoS-자원 협상 프로토콜의 주요 특징에 관하여 설명한다. 구현된 멀티미디어 프레임 워크 상에서 효율적인 멀티미디어 스트리밍을 지원하기 위하여 새로 제안된 QoS 협상 정책을 실제 서버에 적용하는데 있어서 고려해야 할 중요 이슈에 대해서도 분석하였다.

서스펜션 플라즈마 용사법을 이용한 7.5 wt% Y₂O₃-ZrO₂ 열차폐코팅 제조 및 평가

이원준,오윤석,이성민,김형태,임대순,김성원,Lee, Won-Jun,Oh, Yoon-Suk,Lee, Sung-Min,Kim, Hyung-Tae,Lim, Dae-Soon,Kim, Seongwon 한국세라믹학회 2014 한국세라믹학회지 Vol.51 No.6

Considerable research efforts have been explored attempting to enhance the thermal durability of thermal barrier coatings (TBCs) at the high operating temperatures of gas turbines. In this study, the suspension plasma spray (SPS) process was applied to produce TBCs with a segmented structure by using an yttria-stabilized zirconia (YSZ) suspension. Four different experiment sets were carried out by controlling the ratio between surface roughness of the bond coat and feed stock size ($R_a/D_{50}$) in order to examine the effect of $R_a/D_{50}$ ratio on the microstructure of SPS-prepared coatings. When the $R_a/D_{50}$ had a high value of 11.8, a deposited thick coating turned out to have a cone-type columnar microstructure. In contrast, at the low $R_a/D_{50}$ values of 2.9 and 0.18, a deposited thick coating appeared to have a dense, vertically-cracked microstructure. However, with the very low $R_a/D_{50}$ value of 0.05 the coating was delaminated.

금속불순물 제거를 위한 UV/ozone과 HF 세정연구

이원준,전형탁,Lee, Won-Jun,Jeon, Hyeong-Tak 한국재료학회 1996 한국재료학회지 Vol.6 No.11

반도체 소자가 고집적화 됨에 따라 단위공정의 수가 증가하게 되었고 동시에 실리콘 기판의 오염에 대한 문제가 증가하였다. 실리콘 기판의 주 오염물로는 유기물, 파티클, 금속분순물 등이 있으며 특히, Cu와 Fe과 같은 금속불순물은 이온주입 공정, reactive ion etching, photoresist ashing과 같은 실 공정 중에 1011-1013atoms/㎤정도로 오염이 되고 있다. 그러나 금속불순물 중 Cu와 같은 전기음성도가 실리콘 보다 큰 오염물질은 일반적인 습석세정방법으로는 제거하기 힘들다. 따라서 본 연구에서는 Cu와 Fe과 같은 금속불순물을 제거할 목적을 건식과 습식 세정방법을 혼합한 UV/ozone과 HF세정을 제안하여 실시하였다. CuCI2와 FeCI2 표준용액으로 실리콘 기판을 인위적 오염한 후 split 1(HF-only), split 2 (UV/ozone+HF), split 3 (UV/ozone + HF 2번 반복), split 4(UV/ozone-HF 3번 반복)를 실시하였고 TXRF(Total Reflection X-Ray Fluorescence)와 AFM(Atomic Force Microscope)으로 금속불순물 제거량과 표면거칠기를 각각 측정하였다. 또한 contact angle 측정으로 세정에 따른 표면상태도 측정하였다. TXRF 측정결과 split 4가 가장 적은 양의 금속불순물 잔류량을 보였으며 AFM 분석을 통한 표면거칠기도 가장 작은 RMS 값을 나타내었다. Contact angle 측정 결과 UV/ozone 처리는 친수성 표면을 형성하였고 HF처리는 소수성 표면을 형성하였다.

Sildenafil Citrate 복용 후 성관계 뒤 발생한 양안 급성폐쇄각녹내장 1예

이원준,성민철,Won June Lee,MD,Mincheol Seong,MD 대한안과학회 2011 대한안과학회지 Vol.52 No.9

Purpose: The authors of the present study report a case of bilateral simultaneous acute angle closure glaucoma following sildenafil citrate-aided sexual intercourse. Case summary: A 63-year-old man visited the emergency department with sudden onset of bilateral ocular pain and blurred vision. The patient had taken 50 mg sildenafil citrate followed by sexual intercourse. His visual acuity on presentation was 0.3 in the right eye and 0.5 in the left eye. Intraocular pressure (IOP) was 54 mm Hg and 46 mm Hg in the right and left eye, respectively. Anterior chamber depths were shallow and angles were closed on gonioscopy in both eyes. The patient was treated with ocular hypotensive medication and subsequently managed with bilateral YAG laser peripheral iridotomies. During the 13 months of follow-up, there was no recurrent angle closure attack and IOPs were well-controlled. Conclusions: The mechanism of bilateral angle closure glaucoma caused by sildenafil citrate is not proven. Those who are predisposed towards developing angle-closure glaucoma may be at risk when having sexual intercourse aided by sildenafil citrate. J Korean Ophthalmol Soc 2011;52(9):1123-1127

비디오 서버에서의 효율적인 대역폭 스케줄링 지원

이원준,Lee, Won-Jun 한국정보처리학회 2002 정보처리학회논문지 C : 정보통신,정보보안 Vol.9 No.2

Continuous multimedia applications require a guaranteed retricval and transfer rate of streaming data, which conventional file server mechanism generally does not provide. In this paper we describe a dynamic negotiated admission control and dick bandwidth scheduling framework for Continuous Media (CM : e.g., video) servers. The framework consists of two parts. One is a reserve-based admission control mechanism and the other part is a scheduler for continuous media streams with dynamic resource allocation to achieve higher utilization than non-dynamic scheduler by effectively sharing available resources among contending streams to improve overall QoS. Using our policy, we could increase the number of simultaneously running: clients that coo]d be supported and cot]d ensure a good response ratio and better resource utilization under heavy traffic requirements. 멀티미디어 어플리케이션들은 기존의 화일 서버 기법으로는 쉽게 제공하지 못하는 보장된 검색 및 전송률을 요구한다. 본 논문에서는 CM(Continuous Media : 예를 들어 비디오) 서버를 위한 동적 협상 수락 제어(dynamic negotiated admission control)와 자원 스케줄링(resource scheduling) 기법을 제안한다. 이는 두 부분으로 구성되는데, 예약 기반 수락 제어 방법(reserve-baed admission control mechanism)과 동적으로 자원을 할당하는 스케줄러가 그것이다. 정적 스케줄러와 비교할 때, 제안된 기법은 경쟁하는 스트림들에게 이용가능 한 자원들을 효과적으로 공유할 수 있도록 해주며, 전반적인 QoS(Quality of Service)를 향상시키기 위해 자원의 재 할당을 요구하는 스트림들을 위한 스케줄러 초기화 협상(scheduler-initiated negotation)을 통해 높은 이용률을 얻을 수 있다. 본 논문에서 제안한 기법을 사용하여 동시에 실행시킬 수 있는 클라이언트의 수를 증가시킬 수 있으며 혼잡한 트래픽 상태에서도 좋은 응답 비율과 향상된 자원 이용률을 얻을 수 있다.

Johanson 방법을 응용한 연령추정

이원준,김병국,김재형,임회순,이금숙,최홍란,Lee, Won-Joon,Kim, Byung-Gook,Kim, Jae-Hyung,Lim, Hoi-Soon,Lee, Guem-Sug,Choi, Hong-Ran 대한안면통증구강내과학회 2005 Journal of Oral Medicine and Pain Vol.30 No.2

Age estimation is fundamental and important in personal identification with forensic medicine and dentistry. Recently, a lot of studies using various part of the body have been done for age estimation. Age estimation with teeth is the most significant method comparing ones with other part of the body. Gustafson method and Johanson method using postmortem teeth have been authorized in accuracy and systemization and used domestically and internationally. The verification of the accuracy in above methods had been tried many times but it is still rare in Korea. Fifty-nine teeth(incisors, canine, premolars and molars) which were extracted due to periodontal diseases or orthodontic problem were collected. Present study is to 1) compare the accuracy of estimated age in applying Gustafson method and Johanson method to the teeth in Korea, 2) compare and analyze the correlation with results using Gustafson method and Johanson method by age, gender, maxilla - mandible and anterior - premolar - molar. Teeth were embedded in resin and sliced and then examined each one using Gustafson method and Johanson method. The results are as follows: 1. Actual age was a significant difference in estimated age by Johanson method. Actual age was a significant correlation in estimated age by Gustafson method and modified Johanson method. Modified Johanson method was more significant than Gustafson method. 2. In estimated age by Gustafson method, Johanson method and modified Johanson method, there was no significance with actual age by location and gender. 3. In estimated age by Gustafson method, Johanson method and modified Johanson method, there was significance with actual age by age group. Finally, Gustafson method and Johanson method can be used in Korea. To make more accurate verification, however, it needs more specimen and postmortem teeth. Johanson equation proposed by himself has to be developed by further studies.