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공정 압력에 따라 제작되어진 비인듐계 SiZnSnO 박막을 이용한 박막트랜지스터의 성능 연구
이상렬,Lee, Sang-Yeol 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.8
The dependency of processing pressure on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were deposited by using radio frequency (RF) magnetron sputtering method with different partial pressure. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing pressure during deposition processing. As a result, oxygen vacancies generated in SZTO channel layer with increasing partial pressure resulted in negative shift in $V_{th}$ and increase in on-current.
이상렬,Lee, Sang Yeol 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.5
Thin-film transistors(TFTs) with silicon-zinc-tin-oxide(SiZnSnO, SZTO) channel layer are fabricated by rf sputtering method. Electrical properties were changed by different annealing treatment of dry annealing and wet annealing. This procedure improves electrical property especially, stability of oxide TFT. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the surfaces by annealing treatment. The threshold voltage ($V_{th}$) shifted toward positive as increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than that that of Sn, Zn, resulting in the degeneration of the oxygen vacancy ($V_O$). As a result, the Si acts as carrier suppressor and oxygen binder in the SZTO as well as a $V_{th}$ controller, resulting in the enhancement of stability of TFTs.
실리콘산화아연주석 산화물 반도체의 후열처리 온도변화에 따른 트랜지스터의 전기적 특성 연구
이상렬,Lee, Sang-Yeol 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.9
The dependency of annealing temperature on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different annealing treatment. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing annealing temperature. As a result, oxygen vacancies generated in SZTO channel layer with increasing annealing temperature resulted in negative shift in $V_{th}$ and increase in on-current.
이상렬,Lee, Sang Yeol 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.4
Thin-film transistors(TFTs) with silicon zinc tin oxide(SZTO) channel layer are fabricated by solution-process. The threshold voltage ($V_{th}$) shifted toward positive directly with increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than Sn, Zn, thus degenerate the oxygen vacancy (VO). As a result, the Si act as carrier suppressor and oxygen binder in the SZTO as well as a $V_{th}$ controller.
p-PEDOT/n-GZO heterojunction의 전기적 특성
이재상(Jae Sang Lee),박동훈(Dong-Hoon Park),구상모(Sang-Mo Koo),이상렬(Sang Yeol Lee) 대한전기학회 2009 대한전기학회 학술대회 논문집 Vol.2009 No.7
The electrical properties of an inorganic/organic heterojunction has been investigated by spin coating the p-type polymer poly(3,4 ethylenedioxythiophene) : poly(styrenesulfonate) (PEDOT:PSS) on an n-type gallium doping zinc oxide (GZO) film. Current?voltage (I?V) characteristics of the fabricated heterojunction diodes have a good rectifying characteristics. The barrier height is calculated 0.8 eV.