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Magnetron sputtering법으로 제조된 Al-1%Cu/Tungsten Nitride 다층 박막
이기선,서수정,김장현,김남철 공주대학교 자원재활용신소재지역협력센터 2000 2차년도 센터 사업 성과집 Vol.2000 No.1
표면 탄성파 디바이스의 전극재료로 사용되는 Al-1%Cu(4000Å)/tungsten nitride 박막을 magnetron sputtering법으로 제조하고 전기저항을 평가한 결과 비정질상의 tungsten nitride 박막을 제조할 수 있었고, 비정질 형성을 위해서 질소비 (R = N2/(Ar+N2))가 10∼40% 정도 필요하였다. Tungsten nitride 박막의 잔류응력은 비정질이 형성되면서 급격히 감소되었다. 이러한 비정질 박막위에 Al-1%Cu합금막이 형성되었다. 다층막은 453K에서 4시간 동안 열처리함으로써 3.6μΩ-cm의 저항를 나타냈는데, 이는 박막내 결정립 성장과 결정 결함의 감소에 기인하였다. As a power durable-electrode in SAW filter. Al-1%Cu/tungsten nitride multi-layer thin film was fabricated by magnetron sputtering process. Tungsten nitride films had the amorphours phase at the nitrogen ratio, R, ranging from 10~40%. The amorphization could be controlled by nitrogen ratio. R = N2/(N2+Ar) as a sputtering process parameter. Residual stress in tungsten nitride abruptly decreased with the formation of amorphous phase. Al-1%Cu thin film was deposited on the amorphous tungsten nitride. After the multi-layed thin film was annealed for 4 hours at 453K, the resistivity decreased as 3.6 μΩ-cm, which was due to grain growth and reduced crystal defects.
이기선,손현주,이혜규,김신정,민미홍 이화여자대학교 약학회 1988 梨花藥學會誌 Vol.- No.27
2,3-Dichloronaphthoquinone reacts with toluidine, p-aminobenzoic acid, m-nitroaniline, 3-amino-5-methylisoxazole, sulfanilamide and sulfathiazole to afford 2-chloro-3-(toluidino)naphthoquinone (Ⅰ), 2-chloro-3-(p-carboxy anilino)naphthoquinone (Ⅱ), 2-chloro-3-(m-nitroanilino)naphthoquinone (Ⅲ), 2-chloro-3-(5-methylisoxazole-3-amino)naphthoquinone (Ⅳ), 2-chloro-3-(4-aminosulfonylanilino)naphthoquinone (Ⅴ) and 2-chloro-3-(sulfathiazolino)naphthoquinone (Ⅵ) in high yield. The new compounds(Ⅰ∼Ⅵ) have been synthesized and characterized by I.R and H-NMR. The probable mechanism for the formation of the derivatives is discussed.
Direct Observations of Al-Si Junction Interface
이기선,Lee Ki-Seon Korean Society of Electron Microscopy 1978 Applied microscopy Vol.8 No.1
Al-Si junctions were made by vacuum deposition of aluminium on to silicon wafers and examined by TEM. The uneven interfaces of the junctions are formed due to the surface tension of the molten solution resulting in preferential dissolution of silicon in aluminium at some areas. These undesirable uneven interfaces affect the junction shape and so the over-all characteristics of the devices.