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Sub 200 ℃ Fluxless Indium-Tin (In-Sn) Eutectic Bonding for Monolithic 3D-IC
유광위,박진홍 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.65 No.7
In this work, a low-temperature eutectic bonding process based on the formation of an indium(In)-tin (Sn) alloy is studied at temperatures below 200 ℃. The formation of the In-Sn alloy is investigatedthrough a secondary ion mass spectroscopy (SIMS) depth profiling analysis, and the qualityof the bonding region is evaluated by using cross-sectional scanning electron microscope(SEM) andshearing force measurements. At 170 ℃, which is above the melting temperature of In (156 ℃),a large amount of In-Sn alloy is formed without the assistance of any flux owing to the expandedeutectic composite range and the improved quality of the In-Sn contact, resulting in a higher bondingstrength (205 N). The obtained results show the feasibility of using a low-temperature fluxlessbonding process for the fabrication of upper-level devices in monolithic three-dimensional integratedcircuits (3D-ICs).
Negative Effect of Au Nanoparticles on an IGZO TFT-based Nonvolatile Memory Device
임명훈,유광위,Jongtaek Lee,Seok-Won Jeong,노용한,박진홍,Namyong Kwon,정우식 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.3
In this letter, the electrical characteristics of nonvolatile memory devices based on back gate-typeindium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are investigated in terms of the Aunanoparticles (NPs) employed in the floating gate-stack of the device. The size of the Au NPs iscontrolled using a by 500 C annealing process after the Au thin-film deposition. The size and theroughness of the Au NPs were observed by using scanning electron microscopy (SEM), atomic forcemicroscopy (AFM), and transmission electron microscopy (TEM). In order to analyze the electricalproperties according to Au NP size, we measured the current-voltage (ID-VG) characteristics of thenonvolatile memory devices fabricated without Au NPs and with Au NPs of various sizes. Thesize of the Au NP increased, so did the surface roughness of the gate. This resulted in increasedcarrier scattering, which subsequently degraded the on-current of the memory device. In addition,inter-diffusion between the Au and the -IGZO through the non-uniform Al2O3 tunneling layerseemed to further degrade the device performance.
키토산 올리고당에 의한 HL-60 세포의 성장 억제 및 apoptosis 유도
정용욱,김기성,오재영,박종천,이제철,유광재,김정우,장석종,백원기,서성일,서민호,조재위 한국키틴키토산학회 2000 한국키틴키토산학회지 Vol.5 No.2
Chitosan-oligosaccharides (OCHT) have been suggested that it has an inhibitory effect on cancer cell growth. However, the precise mechanism remains to be elucidated. Recently, apoptosis has been recognized that it plays a key role in protection of cancer development. To elucidate the mechanism underlying inhibition of cancer cell growth by OCHT, it is necessary to determine whether the OCHT inhibit the growth of HL-60 cells (human promyelocytic leukemia cell line) through apoptosis. The growth rates of HL-60 cells were remarkably decreased after OCHT treatment. The induction of apoptotic DNA fragmentation by adding OCHT were occurred in a dose dependent fashion. In apoptotic HL-60 cells, caspase-3 activation and Bcl-2 protein down-regulation were shown. Thug, our data suggest that OCHT may inhibit the growth of HL-60 cells through induction of apoptosis.