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Reverse-Conducting IGBT Using MEMS Technology on the Wafer Back Side
원종일,고진근,이태복,오형승,이진호 한국전자통신연구원 2013 ETRI Journal Vol.35 No.4
In this paper, we present a 600-V reverse conducting insulated gate bipolar transistor (RC-IGBT) for soft and hard switching applications, such as general purpose inverters. The newly developed RC-IGBT uses the deep reactive-ion etching trench technology without the thin wafer process technology. Therefore, a freewheeling diode (FWD) is monolithically integrated in an IGBT chip. The proposed RC-IGBT operates as an IGBT in forward conducting mode and as an FWD in reverse conducting mode. Also, to avoid the destructive failure of the gate oxide under the surge current and abnormal conditions, a protective Zener diode is successfully integrated in the gate electrode without compromising the operation performance of the IGBT.
역사이클하중이 원자력 배관재료의 파괴저항곡선에 미치는 영향
원종일,석창성,Weon, Jong-Il,Seok, Chang-Sung 대한기계학회 1999 大韓機械學會論文集A Vol.23 No.7
Fracture resistance(J-R) curves, which are used for the elastic-plastic fracture mechanics analyses, are known to be dependent on the cyclic loading history. The objective of this paper is to study the effect of reverse cyclic loading on J-R curves in CT specimens. The effect of two parameters was observed on the J-R curves during the reverse cyclic loading. One was the minimum-to-maximum load ratio(R) and the other was the incremental plastic displacement(${\delta}_{cycle}/{\delta}_i$), which is related to the amount of crack growth that occurs in a cycle. Fracture resistance test on CT specimens with varying load ratio and incremental plastic displacement were performed. For the SA 516 Gr. 70 steel, the results showed that the J-R curves were decreased with decreasing the load ratio and the incremental plastic displacement. When the load ratio was set to -1, the results of the J-R curves and the $J_i$ value were about $40{\sim}50$ percent of those for the monotonic loading condition. Also on condition that the incremental plastic displacement reached 1/40, the J-R curves and the $J_i$ value were about $50{\sim}60$ percent of those for the incremental plastic displacement of 1/10.
높은 홀딩전압을 갖는 사이리스터 기반 새로운 구조의 ESD 보호소자
원종일,구용서,Won, Jong-Il,Koo, Yong-Seo 한국전기전자학회 2009 전기전자학회논문지 Vol.13 No.1
본 논문에서는 높은 홀딩 전압을 갖는 사이리스터(SCR; Silicon Controlled Rectifier)구조에 기반 한 새로운 구조의 ESD(Electro-Static Discharge) 보호 소자를 제안하였다. 홀딩전압은 애노드단을 감싸고 있는 n-well에 p+ 캐소드를 확장시키고, 캐소드단을 n-well로 추가함으로써 홀딩전압을 증가시킬 수 있다. 제안된 소자는 높은 홀딩전압 특성으로 높은 래치업 면역성을 갖는다. 본 연구에서 제안된 소자의 전기적 특성, 온도특성, ESD 감내특성을 확인하기 위하여 TCAD 시뮬레이션 툴을 이용하여 시뮬레이션을 수행하였다. 시뮬레이션 결과 제안된 소자는 10.5V의 트리거 전압과 3.6V의 홀딩전압을 갖는다. 그리고 추가적인 n-well과 확장된 p+의 사이즈 변화로 4V이상의 홀딩전압을 갖는 것을 확인하였다. The paper introduces a silicon controlled rectifier (SCR)-based device with high holding voltage for ESD power clamp. The holding voltage can be increased by extending a p+ cathode to the first n-well and adding second n-well wrapping around n+ cathode. The increase of the holding voltage above the supply voltage enables latch-up immune normal operation. In this study, the proposed device has been simulated using synopsys TCAD simulator for electrical characteristic, temperature characteristic, and ESD robustness. In the simulation result, the proposed device has holding voltage of 3.6V and trigger voltage of 10.5V. And it is confirmed that the device could have holding voltage of above 4V with the size variation of extended p+ cathode and additional n-well.