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김영석,오충완,최재승,송지헌,이장희,이형규,박근형 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.7
6H-SiC MOSFETs and digital ICs have been fabricated and characterized. PMOS devices are fabricated on an n-type epilayer while the NMOS devices are fabricated on implanted p-wells. NMOS and PMOS devices use a thermally grown gate oxide. SiC MOSFETs are fabricated using different impurity activation methods such as high temperature and newly proposed laser annealing methods. Several digital circuits, such as resistive road NMOS inverters, CMOS inverters, resistive road NMOS NANDs and NORs are fabricated and characterized.
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이원선,오충완,최재승,신동현,이형규,박근형,김영석 한국전기전자재료학회 2002 전기전자재료학회논문지 Vol.15 No.7
A threshold voltage model of SiC N-channel MOSFETs for high-temperature and hard radiation environments has been developed and verified by comparing with experimental results. The proposed model includes the difference in the work functions, the surface potential, depletion charges and SiC/$SiO_2$acceptor-like interface state charges as a function of temperature. Simulations of the model shoved that interface slates were the most dominant factor for the threshold voltage decrease as the temperature increase. To verify the model, SiC N-chnnel MOSFETS were fabricated and threshold voltages as a function of temperature were measured and compared wish model simulations. From these comparisons, extracted density of interface slates was $4{\times}10^{12}\textrm{cm}^{-2}eV^{-1}$.
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최재승,송지헌,오충완,이재봉,김영석,박근형,이형규,김기호 한국물리학회 2003 새물리 Vol.46 No.2
We fabricated, for the first time, an n-channel SiC MOSFET by using laser activation of ion--implanted dopants. The transistor was composed of Mo for a gate and non-alloyed ohmic contacts to the n$^+$ and the p$^+$ regions. The B-implanted p-well, as well as the Al-implanted p+ contact area, was activated by laser irradiation; the N-implanted n$^+$ source and the drain regions, however, were thermally activated during the gate oxide growth. The resulting NMOSFET was operated in a stable fashion without failure in the temperature range from 25 $^\circ$C up to 300$^\circ$C. The threshold voltage was 8.9 V at 25$^\circ$C and gradually decreased to 5.9 V at 300$^\circ$C; the field effect mobility showed its peak value of 9.0 cm$^2$/V-s at 200$^\circ$C. The non-alloyed contact to the p$^+$-region exhibited an ohmic behavior which was more linear than that of the n$^+$ region and a lower contact resistance with a value of 2.3$\times$10$^{-3}$ $\Omega$-cm$^2$ at room temperature. 엑시머 레이저를 이용하여 이온주입 도우펀트를 활성화시켜 SiC NMOSFET을 처음으로 제작하였다. 트랜지스터는 몰리브덴 (Mo) 게이트와 n$^+$, p$^+$ 접촉영역에 동일한 Mo를 적용한 비합금화 (non-alloyed) 접합을 갖고 있다. 붕소 (B)가 주입된 p-우물과 알루미늄 (Al)이 주입된 p$^+$ 접촉 영역은 레이저에 의해, 그리고 질소 (N)가 주입된 n$^+$ 영역은 게이트 산화막 성장 시 고온 열에 의해 활성화되었다. 제작된 NMOSFET은 실온부터 300 $^\circ$C의 온도 범위에서 안정적으로 동작하였고, 문턱전압이 실온에서 8.9 V이지만 온도 증가에 따라 점차 감소하여 300 $^\circ$C에서 5.9 V이며, 전계 효과 이동도는 실온에서 5.6 cm$^2$/V-s이고 200 $^\circ$C에서 9.0 cm$^2$/V-s로 최대 값을 가지고 있었다. 비합금화 접합의 전류-전압 특성은 n$^+$형에 비해 p$^+$형이 더 선형적 오믹접합 특성을 보였으며, 접촉저항 값 또한 더 낮아 2.3$\times$10$^{-3}$ $\Omega$-cm$^2$을 보였다.
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