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양형준,전우찬,양희정,곽재령,서효원,이지숙 대한의학회 2017 Journal of Korean medical science Vol.32 No.11
As neonates are brought to the emergency department (ED) for various complaints, it is challenging for emergency physicians to clinically determine the urgency of the visit. We sought to explore clinical characteristics associated with urgent visits to the ED. We conducted a retrospective study by reviewing medical records of neonatal visits to a tertiary pediatric regional emergency center for 5 years. Cases of patients who were discharged after checking only chest or abdominal X-ray or discharged without workup, were classified as non-urgent visits. Cases where more examinations were performed, or when the patient was hospitalized, were classified as urgent visits. Various clinical features and process in the ED were compared between the groups. Of the 1,008 cases enrolled in this study, 856 (84.9%) were urgent and 152 (15.1%) were non-urgent visits. After adjustment by multiple logistic regression analysis, non-urgent visits were associated with self-referrals rather than physician-referrals (odds ratio [OR], 5.96), visits in the evening rather than at night or daytime (OR, 2.51), patient visits from home rather than from medical facilities (OR, 2.19; 95). Fever and jaundice were the most common complaints (25.7% and 24.5%, respectively), and their OR of non-urgent visit was relatively low (adjusted OR 0.03 and 0.03, respectively). However, other common complaints, such as vomiting and cough (7.4% and 7.1%, respectively), were more likely to be non-urgent visits (adjusted OR 2.96 and 9.83, respectively). For suspected non-urgent visits, emergency physicians need to try to reduce unnecessary workup and shorten length of stay in ED.
Generalized Absolute-Value Metric에서의 원, 타원, 쌍곡선의 모양에 관한 연구
양형준,고일석 한국수학교육학회 2013 수학교육 학술지 Vol.2013 No.1
Generalized Absolute-Value Metric(GAM)은 A.Bayar, S.Ekmekci, Z.Akca에 의해 2008년에 발표된 개념으로 택시거리함수, Chinese-Checker 거리함수, 알파 거리함수 등의 비유클리드 거리함수들을 포함하는 일반화된 거리함수이다. 현재 GAM에 대한 연구는 거리함수의 성립 여부와 평면기하의 간단한 정리들만 진행되어 있다. 본 연구에서는 GAM에서 원, 타원, 쌍곡선의 모양에 대해 알아보았다.
양형준,송윤흡 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.5
The three-dimensional (3-D) NAND flash structure with fully charge storage using edge fringing field effect is presented, and its programming characteristic is evaluated. We successfully confirmed that this structure using fringing field effect provides good program characteristics showing sufficient threshold voltage (VT) margin by technology computer-aided design (TCAD) simulation. From the simulation results, we expect that program speed characteristics of proposed structure have competitive compared to other 3D NAND flash structure. Moreover, it is estimated that this structural feature using edge fringing field effect gives better design scalability compared to the conventional 3D NAND flash structures by scaling of the hole size for the vertical channel. As a result, the proposed structure is one of the candidates of Terabit 3D vertical NAND flash cell with lower bit cost and design scalability.
Cell Characteristics of FePt Nano-dot Memories with a High-k Al2O3 Blocking Oxide
이개훈,이정민,양형준,송윤흡,Ji Cheol Bea,Testsu Tanaka 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.11
The cell characteristics of an alloy FePt nano-dot (ND) charge trapping memory with a high-k dielectric as a blocking oxide was investigated. Adoption of a high-k Al2O3 material as a blocking oxide for the metal nano-dot memory provided a superior scaling of the operation voltage compared to silicon oxide under a similar gate leakage level. For the 40-nm-thick high-k (Al2O3) blocking oxide, we confirmed an operation voltage reduction of ∼7 V under the same memory window on for silicon dioxide. Also, this device showed a large memory window of 7.8 V and a low leakage current under 10−10 A in an area of Φ 0.25 mm. From these results, the use of a dielectric (Al2O3) as a blocking oxide for a metal nano-dot device is essential, and a metal nano-dot memory with a high-k dielectric will be one of the candidates for a high-density non-volatile memory device.
Leakage Current Characteristics of the Multiple Metal Alloy Nanodot Memory
이개훈,이정민,양형준,Ji Chel Bea,Tetsu Tanaka,송윤흡 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.57 No.5
The leakage current characteristics of a multiple metal alloy nanodot device for a nonvolatile random access memory using FePt materials are investigated. Several annealing conditions are evaluated and optimized to suppress the leakage current and to better the memory characterisctics. This work confirmed that the annealing condition of 700 ℃ in a high vacuum ambience (under 1 × 10−5 Pa) simultaneously provided good cell characteristics from a high dot density of over 1 × 1013/cm2 and a low leakage current. In addition, a smaller nanodot diameter was found to give a lower leakage current for the multiple nanodot memory. Finally, for the proposed annealing condition, the quadruple FePt multiple nanodot memory with a 2-nm dot diameter provided good leakage current characteristics, showing a threshold voltage shift of under 5% at an initial retention stage of 1000 sec.
3차원 구조 NAND flash memory의 mechanical stress 분포 및 온도 영향성에 관한 연구
남궁연(Yeon Namkoong),양형준(Hyungjun Yang),안준섭(JunSeop An),송윤흡(Yunheub Song) 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.6
According to Moor’s law, Scaling of NAND flash memory was continued but nowadays two dimensional structure was reached the physical limit. Consequently three dimensional structure was researched and produced. Mechanical stress occurs reliability problem and change electrical characteristics. Especially in multi-layer structure, mechanical stress is one of the most important factor that determines cell characteristics and reliability. In this paper, we investigate mechanical stress distribution and effect of annealing temperature in 3D NAND flash memory.