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안영주,안진운,조철제 한국조명전기설비학회 1997 조명.전기설비 Vol.11 No.3
SRm의 성능에 미치는 영향은 전동기 권선을 여자하는 모드에 어는 정도 의존하며, 여자모드에 전류펄스식(전류원) 또는 접압펄스식(접압원)이 있다. SRM의 운전 특성상에서 볼 때 전류원에 의한 방법이 이상적인 전원이지만, 대용량의 사용을 위한 구성이 후자에 비하여 실혐하기가 쉽지 않고 경제적이지 못하다. 본 논문에서는 지금까지 보통 상용되고 ldT는 전압원의 대안으로 가변전압원이 고려되었다. 3가지 여자 모드에 관한 비교가 제시되고, 순시 전압과 전류 파형이 실험결과로 포함된다.
김진섭,김유미,정광석,윤호진,양성동,김성현,안진운,고영욱,이가원 한국전기전자재료학회 2014 Transactions on Electrical and Electronic Material Vol.15 No.6
In this paper, we investigate visible light stress instability in radio frequency (RF) sputtered a-IGZO thin filmtransistors (TFTs). The oxygen flow rate differs during deposition to control the concentration of oxygenvacancies, which is confirmed via RT PL. A negative shift is observed in the threshold voltage (VTH) underillumination with/without the gate bias, and the amount of shift in VTH is proportional to the concentrationof oxygen vacancies. This can be explained to be consistent with the ionization oxygen vacancy model wherethe instability in VTH under illumination is caused by the increase in the channel conductivity by electrons thatare photo-generated from oxygen vacancies, and it is maintained after the illumination is removed due to thenegative-U center properties.
Analysis of SOHOS Flash Memory with 3-level Charge Pumping Method
양승동,김성현,윤호진,정광석,김유미,김진섭,고영욱,안진운,이희덕,이가원 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.1
This paper discusses the 3-level charge pumping (CP) method in planar-type Silicon-Oxide-High-k-Oxide-Silicon (SOHOS) and Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) devices to find out the reason of the degradation of data retention properties. In the CP technique, pulses are applied to the gate of the MOSFET which alternately fill the traps with electrons and holes, thereby causing a recombination current Icp to flow in the substrate. The 3-level charge pumping method may be used to determine not only interface trap densities but also capture cross sections as a function of trap energy. By applying this method, SOHOS device found to have a higher interface trap density than SONOS device. Therefore, degradation of data retention characteristics is attributed to the many interface trap sites.