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Design Study of a Re-bunching RFQ for the SPES Project
신승욱,A. Palmieri,M. Comunian,F. Grespan,채종서 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.9
An upgrade to the 2nd generation of the selective production of exotic species (SPES) to produce aradioactive ion beam (RIB) has been studied at the istituto nazionale di fisica nucleare − laboratorynazionali di Legnaro (INFN-LNL). Due to the long distance between the isotope separator online(ISOL) facility and the superconducting quarter wave resonator (QWR) cavity acceleratorelineare per ioni (ALPI), a new re-buncher cavity must be introduced to maintain the high beamquality during the beam transport. A particular radio frequency quadrupole (RFQ) structure hasbeen suggested to meet the requirements of this project. A window-type RFQ, which has a highmode separation, less power dissipation and compact size compared to the conventional normal4-vane RFQ, has been introduced. The RF design has been studied considering the requirementsof the re-bunching machine for high figures of merit such as a proper operation frequency, a highshunt impedance, a high quality factor, a low power dissipation, etc. A sensitivity analysis of thefabrication and the misalignment error has been conducted. A micro-movement slug tuner has beenintroduced to compensate for the frequency variations that may occur due to the beam loading, thethermal instability, the microphonic effect, etc.
신승욱,In-YoungKim,GURAV KISHOR VISHWANATH,Chae Hwan Jeong,Jae Ho Yun,P.S. Patil,이정용,Jin Hyeok Kim 한국물리학회 2013 Current Applied Physics Vol.13 No.8
Cu2ZnSn(SxS1-x)4 (CZTSSe) thin films were prepared by annealing a stacked precursor prepared on Mo coated glass substrates by the sputtering technique. The stacked precursor thin films were prepared from Cu, SnS2, and ZnS targets at room temperature with stacking orders of Cu/SnS2/ZnS. The stacked precursor thin films were annealed using a tubular two zone furnace system under a mixed N2 (95%) þ H2S (5%) þ Se vaporization atmosphere at 580 ℃ for 2 h. The effects of different Se vaporization temperature from 250 C to 500 ℃ on the structural, morphological, chemical, and optical properties of the CZTSSe thin films were investigated. X-ray diffraction patterns, Raman spectroscopy, and X-ray photoelectron spectroscopy results showed that the annealed thin films had a single kesterite crystal structure without a secondary phase. The 2q angle position for the peaks from the (112) plane in the annealed thin films decreased with increasing Se vaporization temperature. Energy dispersive X-ray results showed that the presence of Se in annealed thin films increased from 0 at% to 42.7 at% with increasing Se vaporization temperatures. UVeVIS spectroscopy results showed that the absorption coefficient of all the annealed thin films was over 104 cm-1 and that the optical band gap energy decreased from 1.5 eV to 1.05 eV with increasing Se vaporization temperature.
신승욱,Kyu Ung Sim,문종하,김진혁 한국물리학회 2010 Current Applied Physics Vol.10 No.2
The 3 wt% Ga-doped ZnO (GZO) thin films were prepared on glass substrates by RF magnetron sputtering with different processing parameters such as RF powers, substrate temperatures and Ar working pressures. Crystallinity and electrical properties of GZO films were investigated. The X-ray diffraction results showed that all the GZO films were grown as a hexagonal wurtzite phase with highly c-axis preferred out-of-plane orientation. The electrical properties of GZO films were strongly related to processing parameters. With increasing the processing parameter values, the electrical properties of GZO films were improved up to at 350 ℃, 200Wand 6 mTorr, above that they became worse at 400 ℃ and 7.5 mTorr. The film showed the lowest resistivity of 3.45 × 10-4 Ωcm when the film was prepared in the optimized conditions of processing parameters of 350 ℃, 6 mTorr, and 200 W.
Polybenzoxazole/graphene nanocomposite for etching hardmask
신승욱,김종선,김선준,김대우,정희태 한국공업화학회 2019 Journal of Industrial and Engineering Chemistry Vol.75 No.-
We demonstrate that graphene can enhance the etch resistance of polymeric hardmask significantly. Graphene oxide with a sub-micrometer diameter (nGO) was functionalized withfluorinated poly(hydroxyamide) (FPHA) via a chemical coupling reaction. The FPHA-functionalized-nGO can be dispersedin various organic solvents including methanol, cyclohexanone, dimethylformamide, and N-methylpyrrolidone. In addition, the dispersions were spincoated to prepare hardmaskfilms which were thenthermally annealed to produce nRGO-fluorinated-polybenzoxazole (FPBO)film. Compared to pristineFPBOfilm, elastic modulus (122%), hardness (92%), and etch resistance (54%) were significantly enhancedat 17 wt.% graphene loading, surpassing the properties of commercial CHM009film.
Regional Effects on Chimera Formation in 454 Pyrosequenced Amplicons from a Mock Community
신승욱,이태권,한정민,박준홍 한국미생물학회 2014 The journal of microbiology Vol.52 No.7
Chimeras are a frequent artifact in polymerase chain reaction and could be the underlying causes of erroneous taxonomic identifications, overestimated microbial diversity, and spurious sequences. However, little is known about the regional effects on chimera formation. Therefore, we investigated the chimera formation rates in different regions of phylogenetically important biomarker genes to test the regional effects on chimera formation. An empirical study of chimera formation rates was performed using the Roche GSFLXTM system with sequences of the V1/V2/V3 and V4/V5 regions of the 16S rRNA gene and sequences of the nifH gene from a mock microbial community. The chimera formation rates for the 16S V1/V2/V3 region, V4/V5 region,and nifH gene were 22.1 –38.5%, 3.68–3.88%, and 0.31–0.98%, respectively. Some amplicons from the V1/V2/V3 regions were shorter than the typical length (~7–31%), reflecting in complete extension. In the V1/V2/V3 and V4/V5 regions, conserved and hypervariable regions were identified. Chimeric hot spots were located in parts of conserved regionsnear the ends of the amplicons. The 16S V1/V2/V3 region had the highest chimera formation rate, likely because of long template lengths and incomplete extension. The amplicons of the nifH gene had the lowest frequency of chimera formation most likely because of variations in their wobble positions in triplet codons. Our results suggest that the main reasons for chimera formation are sequence similarity and premature termination of DNA extension near primer regions. Other housekeeping genes can be a good substitute for 16S rRNA genes in molecula rmicrobial studies to reduce the effects of chimera formation.
신승욱,한준희,강명길,윤재호,이정용,김진혁,Shin, Seung-Wook,Han, Jun-Hee,Gang, Myeng-Gil,Yun, Jae-Ho,Lee, Jeong-Yong,Kim, Jin-Hyeok 한국재료학회 2012 한국재료학회지 Vol.22 No.5
Chalcogenide-based semiconductors, such as $CuInSe_2$, $CuGaSe_2$, Cu(In,Ga)$Se_2$ (CIGS), and CdTe have attracted considerable interest as efficient materials in thin film solar cells (TFSCs). Currently, CIGS and CdTe TFSCs have demonstrated the highest power conversion efficiency (PCE) of over 11% in module production. However, commercialized CIGS and CdTe TFSCs have some limitations due to the scarcity of In, Ga, and Te and the environmental issues associated with Cd and Se. Recently, kesterite CZTS, which is one of the In- and Ga- free absorber materials, has been attracted considerable attention as a new candidate for use as an absorber material in thin film solar cells. The CZTS-based absorber material has outstanding characteristics such as band gap energy of 1.0 eV to 1.5 eV, high absorption coefficient on the order of $10^4cm^{-1}$, and high theoretical conversion efficiency of 32.2% in thin film solar cells. Despite these promising characteristics, research into CZTS-based thin film solar cells is still incomprehensive and related reports are quite few compared to those for CIGS thin film solar cells, which show high efficiency of over 20%. The recent development of kesterite-based CZTS thin film solar cells is summarized in this work. The new challenges for enhanced performance in CZTS thin films are examined and prospective issues are addressed as well.