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신백균 대한전기학회 2006 전기학회논문지C Vol.55 No.1(C)
- Transparent ZnO thin films were prepared by KrF pulsed laser deposition (PLD) technique and applied to a bottom-gate type thin film transistor device as an active channel layer. A high conductive crystalline Si substrate was used as an metal-like bottom gate and SiN insulating layer was then deposited by LPCVD(low pressure chemical vapour deposition). An aluminum layer was then vacuum evaporated and patterned to form a source/drain metal contact. Oxygen partial pressure and substrate temperature were varied during the ZnO PLD deposition process and their influence on the thin film properties were investigated by X-ray diffraction(XRD) and Hall-van der Pauw method. Optical transparency of the ZnO thin film was analyzed by UV-visible photometer. The resulting ZnO-TFT devices showed an on-off ration of 106 and field effect mobility of 2.4-6.1 cm2/Vs.
플라즈마 공중합 고분자 절연막과 펜타센 반도체막의 계면특성
신백균(Paik-Kyun Shin),임헌찬(H-C Lim),육재호(J-H Yuk),박종관(J-K Park),조기선(G-S Jo),남광우(K-Y Nam),박종국(J-K Park),김용운(Y-W Kim),정무영(M-Y Chung) 대한전기학회 2009 대한전기학회 학술대회 논문집 Vol.2009 No.7
Thin films of pp(ST-Co-VA) were fabricated by plasma deposition polymerization (PVDPM) technique. Properties of the plasma polymerized pp(ST-Co-VA) thin films were investigated for application to semiconductor device as insulator. Thickness, dielectric property, composition of the pp(ST-Co-VA) thin films were investigated considering the relationship with preparation condition such as gas pressure and deposition time. In order to verify the possibility of application to organic thin film transistor, a pentacene thin film was deposited on the pp(ST-Co-VA) insulator by vacuum thermal evaporation technique. Crystalline property of the pentacene thin film was investigated by XRD and SEM, FT-IR. Surface properties at the pp(ST-Co-VA)/pentacene interface was investigated by contact angle measurement. The pp(ST-Co-VA) thin film showed a high-k (k=4.6) and good interface characteristic with pentacene semiconducting layer, which indicates that it would be a promising material for organic thin film transistor (OTFT) application.
申白均(Paik-Kyun Shin) 대한전기학회 2006 전기학회논문지C Vol.55 No.1
Transparent ZnO thin films were prepared by KrF pulsed laser deposition (PLD) technique and applied to a bottom-gate type thin film transistor device as an active channel layer. A high conductive crystalline Si substrate was used as an metal-like bottom gate and SiN insulating layer was then deposited by LPCVD(low pressure chemical vapour deposition). An aluminum layer was then vacuum evaporated and patterned to form a source/drain metal contact. Oxygen partial pressure and substrate temperature were varied during the ZnO PLD deposition process and their influence on the thin film properties were investigated by X-ray diffraction(XRD) and Hall-van der Pauw method. Optical transparency of the ZnO thin film was analyzed by UV-visible photometer. The resulting ZnO-TFT devices showed an on-off ration of 10? and field effect mobility of 2.4-6.1 ㎠/Vㆍs.