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$C_{60}$ 얇은 결정의 결정구조에 관한 투과형전자현미경 연구
송세안,김성훈,서영덕,김성근,Song, Se-Ahn,Kim, Sung-Hoon,Suh, Young-Doug,Kim, Seong-Keun 한국현미경학회 1991 Applied microscopy Vol.21 No.2
[ $C_{60}$ ] molecule, the Buckminsterfullerene, has generated great interest because of its unique molecular structure and of superconductivity exhibited in its alkali-doped solids. We have investigated the molecular stacking and crystal structure of $C_{60}$ thin crystals formed on amorphous carbon film. The $C_{60}$ powder which was chromatographically purified was dissolved in benzene. The thin crystals of $C_{60}$ were observed with a 300 keV transmission electron microscope. Electron diffraction analysis and direct imaging of its molecular stacking were carried out. It was found from this work that the molecules of $10.0{\AA}$ diameter are arrayed hexagonally on substrate surface and $8.7{\AA}$ lattice planes are quite often found in several types of ED patterns, which can never be explained with a fcc model. Therefore the structure of $C_{60}$ thin crystals is hcp, although we cannot fully exclude the possibility of co-existence of hcp and fcc.
투과전자현미경 조사에 의한 사파이어 $({\alpha}-Al_2O_3)$합성 결정내의 결함특성 분석
김황수,송세안,Kim, Hwang-Su,Song, Se-Ahn 한국현미경학회 2006 Applied microscopy Vol.36 No.3
합성 사파이어 기판 시료-GaN반도체의 성장기판으로 사용된-의 내재하는 결함 형태를 전통적인 투과식 전자현미경 조사기법 (TEM), LACBED, HAADF-STEM 방법으로 관찰 분석하였다. 이 시료에서 주로 발견된 결함들은 두께 ${\sim}2nm$에서 32nm를 가진(0001)면 미소 쌍정(basal microtwins), 모체 결정과의 계면 주위의 변형 결함, (0001)면 전위결함(basal dislocations), 그리고 {$2\bar{1}\bar{1}3$} 피라미드 미끄럼면 중 한 면에서 일어나는 복잡한 형태의 전위 결함들이다 이들(0001)면 및 {$2\bar{1}\bar{1}3$}면에 전위 결함들은 미소 쌍정과 강하게 관련되어 일어나는 것으로 보인다. 또한 전위결함 밀도는 매우 균일하지 않으며 수 ${\mu}m$의 크기의 결함 밀집 영역에서는 그 밀도가 ${\sim}10^{10}/cm^2정도만큼 높지만 시료 전체에서의 평균은 대체적으로 ${\sim}10^5/cm^2보다 작다. 이 값은 보통 합성되는 결정에서 평균적으로 예상되는 수치이다. The defects in a synthesized crystal of ${\alpha}-Al_2O_3$ used as substrate for growing of semi-conductor materials such as GaN were examined by the conventional transmission electron microscopy (TEM), Large Angle CBED and High-Angle Annular Dark Field (HAADF) STEM methods. The dominant defects found in the specimen are basal microtwins with the thickness of ${\sim}2\;to\;32 nm$ and the associated strong strain field at the interface of microtwin/matrix, basal dislocations and complex dislocations in the one of {$2\bar{1}\bar{1}3$} pyramidal slip plane. All these basal and pyramidal dislocations seem to be strong related to basal microtwins. It was also found that the density of defects is very uneven. In the certain area with the dimension of a few fm, the dislocation density is quite high as an order of ${/sim}10^{10}/cm^2, but the average density is roughly estimated to be less than ${\sim}10^5/cm^2, as is usually expected in general synthesized crystals.