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Analysis of Self Heating Effect(SHE) according to Buried Oxide Thickness in SOI Nanowire FET
명일호,손도균,김현숙,강명곤,신형철 대한전자공학회 2017 Journal of semiconductor technology and science Vol.17 No.5
In this paper, the Self Heating Effect (SHE) is investigated in silicon on insulator (SOI) nanowire MOSFETs. A comprehensive study of SHE in Nanowire FET (NWFET) was implemented by Technology Computer-Aided Design (TCAD) simulation. Through analysis of on-current (Ion), thermal resistance (RTH), and heat flux, the DC characteristics of SHE were investigated according to the increase of buried oxide thickness (Tbox). The results indicate that leakage current is not changed according to Tbox so that it is not necessary to increase Tbox. In conclusion, in case that Tbox was optimized by 1 nm, temperature and RTH were reduced by 152 K and 54.5% respectively. Also, Ion was increased by 5.84% maintaining leakage current compared with Tbox of 20 nm.